Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method

Patent metadata

Field	Value
Publication number	US-9653335-B2
Application number	US-201213556655-A
Country	US
Kind code	B2
Filing date	Jul 24, 2012
Priority date	Jul 27, 2011
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

A laminate comprising a support, a temporary adhesive layer, and a wafer having a circuit-forming front surface and a back surface to be processed allows for processing the wafer. The temporary adhesive layer consists of a first temporary bond layer (A) of thermoplastic organosiloxane polymer which is releasably bonded to the front surface of the wafer and a second temporary bond layer (B) of thermosetting modified siloxane polymer which is laid contiguous to the first temporary bond layer and releasably bonded to the support.

First claim

The invention claimed is:

1. A wafer processing laminate comprising a support, a temporary adhesive layer on the support, and a wafer laid contiguous to the temporary adhesive layer, the wafer having a circuit-forming front surface and a back surface to be processed,
said temporary adhesive layer including a first temporary bond layer (A) of thermoplastic organosiloxane polymer which is releasably bonded to the front surface of the wafer and a second temporary bond layer (B) of thermosetting modified siloxane polymer which is laid contiguous to the first temporary bond layer and releasably bonded to and in direct contact with the support,
wherein the first temporary bond layer (A) comprises a non-reactive organopolysiloxane consisting of 99.000 to 99.999 mol % of difunctional siloxane units of R 11 R 12 SiO 2/2 , 1.000 to 0.001 mol % of monofunctional siloxane units of R 13 R 14 R 15 SiO 1/2 , and 0.000 to 0.500 mol % of trifunctional siloxane units of R 16 SiO 3/2 wherein R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 are each independently an unsubstituted monovalent hydrocarbon group selected from the group consisting of alkyl groups, cycloalklyl groups and aryl groups, the non-reactive organopolysiloxane having a weight average molecular weight of 200,000 to 1,000,000, and containing up to 0.5% by weight of a low molecular fraction having a molecular weight of up to 740,
the second temporary bond layer (B) is a single cured layer of a composition comprising 100 parts by weight of a thermosetting modified siloxane polymer which is a silphenylene-containing polymer comprising recurring units of general formula (1) and having a weight average molecular weight of 3,000 to 500,000 or an epoxy-containing silicone polymer comprising recurring units of general formula (2) and having a weight average molecular weight of 3,000 to 500,000, and 0.1 to 50 parts by weight of a crosslinker which is selected from the group consisting of an amino condensate modified with formalin or formalin-alcohol, a melamine resin, a urea resin, a phenol compound having on average at least two methylol or alkoxymethylol groups per molecule, and an epoxy compound having on average at least two epoxy groups per molecule,

wherein R 1 to R 4 are each independently a monovalent hydrocarbon group of 1 to 8 carbon atoms, m is an integer of 1 to 100, A is a positive number, B is 0 or a positive number, X is a divalent organic group having general formula (3):

wherein Z is a divalent organic group selected from:

n is 0 or 1, R 5 and R 6 are each independently an alkyl or alkoxy group of 1 to 4 carbon atoms, and k is 0, 1 or 2,

wherein R 1 to R 4 are each independently a monovalent hydrocarbon group of 1 to 8 carbon atoms, m is an integer of 1 to 100, a, b, c and d each are 0 or a positive number, with the proviso that c and d are not equal to 0 at the same time, and 0<(c+d)/(a+b+c+d)≦1.0,
X is a divalent organic group having general formula (3):

wherein Z is a divalent organic group selected from:

n is 0 or 1, R 5 and R 6 are each independently an alkyl or alkoxy group of 1 to 4 carbon atoms, and k is 0, 1 or 2, and
Y is a divalent organic group having general formula (4):

wherein V is a divalent organic group selected from:

p is 0 or 1, R 7 and R 8 are each independently an alkyl or alkoxy group of 1 to 4 carbon atoms, and h is 0, 1 or 2,
the thickness of the first temporary bond layer (A) is in the range of 0.1 to 10 μm,
the second temporary bond layer (B) is deposited such that the cured thickness is in the range of 10 to 200 μm,
the support is selected from the group consisting of silicon wafers, glass substrates, and quartz wafers, the second temporary bond layer (B) being directly bonded to the silicon, glass, or quartz surface of the support, and the wafer is a semiconductor wafer.

2. The wafer processing laminate of claim 1 wherein the thickness of the first temporary bond layer (A) is 3 to 10 μm.

3. A method for manufacturing a thin wafer, comprising the steps of:
(a) bonding a wafer to a support via an adhesive layer to form the wafer processing laminate as set forth in claim 1 , the wafer having a circuit-forming front surface and a non-circuit-forming back surface, with the circuit-forming surface being contiguous to the support,
(b) grinding the non-circuit-forming surface of the wafer bonded to the support,
(c) processing the non-circuit-forming surface of the wafer,
(d) releasing the processed wafer from the support, and
(e) optionally removing any adhesive layer from the circuit-forming surface of the wafer.

4. A wafer processing member comprising a support and a temporary adhesive layer on the support, wherein the temporary adhesive layer is for temporarily bonding with a wafer to be processed, the wafer having a circuit-forming front surface and a back surface to be processed,
said temporary adhesive layer including a second temporary bond layer (B) of thermosetting modified siloxane polymer which is releasably bonded to and in direct contact with the support and a first temporary bond layer (A) of thermoplastic organosiloxane polymer which is laid contiguous to the second temporary bond layer and which is for being releasably bonded to the front surface of the wafer,
wherein the first temporary bond layer (A) comprises a non-reactive organopolysiloxane consisting of 99.000 to 99.999 mol % of difunctional siloxane units of R 11 R 12 SiO 2/2 , 1.000 to 0.001 mol % of monofunctional siloxane units of R 13 R 14 R 15 SiO 1/2 , and 0.000 to 0.500 mol % of trifunctional siloxane units of R 16 SiO 3/2 , wherein R 11 , R 12 , R 13 , R 14 , R 15 , and R 16 are each independently an unsubstituted monovalent hydrocarbon group selected from the group consisting of alkyl groups, cycloalklyl groups and aryl groups, the non-reactive organopolysiloxane having a weight average molecular weight of 200,000 to 1,000,000, and containing up to 0.5% by weight of a low molecular fraction having a molecular weight of up to 740,
the second temporary bond layer (B) is a single cured layer of a composition comprising 100 parts by weight of a thermosetting modified siloxane polymer which is a silphenylene-containing polymer comprising recurring units of general formula (1) and having a weight average molecular weight of 3,000 to 500,000 or an epoxy-containing silicone polymer comprising recurring units of general formula (2) and having a weight average molecular weight of 3,000 to 500,000, and 0.1 to 50 parts by weight of a crosslinker which is selected from the group consisting of an amino condensate modified with formalin or formalin-alcohol, a melamine resin, a urea resin, a phenol compound having on average at least two methylol or alkoxymethylol groups per molecule, and an epoxy compound having on average at least two epoxy groups per molecule,

Assignees

• Kato Hideto
• Sugo Michihiro
• Tagami Shohei
• Shinetsu Chemical Co

Inventors

• Kato Hideto
• Sugo Michihiro
• Tagami Shohei

Classifications

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10P72/7402 Primary

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• C08G77/52

  containing aromatic rings · CPC title