Scanner model representation with transmission cross coefficients

Patent metadata

Field	Value
Publication number	US-9645509-B2
Application number	US-60846009-A
Country	US
Kind code	B2
Filing date	Oct 29, 2009
Priority date	Nov 10, 2008
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

The present invention relates to a method for simulating aspects of a lithographic process. According to certain aspects, the present invention uses transmission cross coefficients to represent the scanner data and models. According to other aspects, the present invention enables sensitive data regarding various scanner subsystems to be hidden from third party view, while providing data and models useful for accurate lithographic simulation.

First claim

The invention claimed is:

1. A method for simulating aspects of a lithographic process, comprising:
securing data regarding characteristics of a lithographic apparatus;
providing non-secure data about the lithographic process, wherein the non-secure data are not hidden;
generating mathematical models representing the secured data and the non-secure data, wherein the secure data are encapsulated using a transformation function; and
providing the mathematical models to a simulation process while keeping the secured data hidden to the simulation process, thereby allowing the simulation process to be performed using the mathematical models and without the simulation process having access to the secured data which is kept hidden from the simulation process by having been encapsulated using the transformation function into the mathematical models,
wherein the transformation function includes computing one or more transmission cross coefficients (TCCs) comprising a plurality of eigen-systems representing the lithographic apparatus, and
wherein the simulation process uses the mathematical models to form a simulated image corresponding to an actual image of the lithographic process, the actual image being an image as if produced by projecting a portion of a mask layout onto a substrate using the lithographic apparatus.

2. The method according to claim 1 , wherein the one or more TCCs are computed based on characteristics of Diffractive Optical Element (DOE) selected from a library of standard illumination conditions.

3. The method according to claim 1 , wherein a partial coherence formulation is used compute the plurality of eigen-systems into which the TCCs are decomposed, each eigen-system having a corresponding set of eigenvectors and eigenvalues.

4. The method according to claim 1 , wherein generating the mathematical models includes selecting dominant ones of the eigen-systems to be provided to the simulation process.

5. A method for simulating aspects of a lithographic process, comprising:
providing information on one or more optical components, one or more optical properties, or both of a lithographic apparatus;
encapsulating the information of the one or more optical components by using a transformation function, wherein the transformation function secures the information on the one or more optical components;
providing further information about the lithographic process; and
providing the encapsulated information and the further information to a simulation process to simulate the lithographic process, thereby allowing the simulation process to be performed using the encapsulated information and without the simulation process having access to the secured information on the one or more optical components which is kept hidden from the simulation process by having been encapsulated using the transformation function into the encapsulated information,
wherein the transformation function includes computing one or more transmission cross coefficients (TCCs) comprising a plurality of eigen-systems representing the lithographic apparatus, and
wherein the simulation process uses the encapsulated information and the further information to form a simulated image corresponding to an actual image of the lithographic process, the actual image being an image as if produced by projecting a portion of a mask layout onto a substrate using the lithographic apparatus.

6. The method according to claim 5 , wherein the information that is secured by the transformation function is unavailable to a user of the simulation process.

7. The method according to claim 5 , wherein the one or more optical components include a illumination system, a projection system or both of the lithographic apparatus.

8. The method according to claim 5 , wherein the one or more optical properties include illuminator shape and polarization, Jones pupil, focus blur due to laser bandwidth, focus blur due to chromatic aberrations.

9. The method according to claim 5 , wherein the computed transmission cross coefficients are applied to a source-mask simulation process to determine process quality metrics of predicted contours of a mask layout data file.

10. The method according to claim 9 , wherein the process quality metrics include one or more of normalized image log slope, mask error factor, and process window.

11. The method according to claim 5 , wherein the one or more TCCs are computed based on characteristics of Diffractive Optical Element (DOE) selected from a library of standard illumination conditions.

12. The method according to claim 5 , wherein a partial coherence formulation is used compute the plurality of eigen-systems into which the TCCs are decomposed, each eigen-system having a corresponding set of eigenvectors and eigenvalues.

13. A method for simulating aspects of a lithographic process, comprising:
generating a model for simulating the aspects of the lithographic process;
inputting information about a plurality of characteristics of a lithographic apparatus used in the lithographic process to the model; and
using the model to transform the information into transformed information with a transformation function of which the inverse is indeterminate given the transformed information only,
wherein the model allows obtaining the simulated aspects based on the transformed information and further information about other aspects of the lithographic process, thereby allowing the simulation to be performed using the model and without the simulation process having access to the information about the plurality of characteristics of the lithographic process which is kept hidden from the simulation process by having been transformed using the transformation function into the model, and wherein the transformation function includes computing transmission cross coefficients (TCCs) comprising a plurality of eigen-systems representing the lithographic apparatus, and
wherein the simulation process uses the model to form a simulated image corresponding to an actual image of the lithographic process, the actual image being an image as if produced by projecting a portion of a mask layout onto a substrate using the lithographic apparatus.

14. The method according to claim 13 , wherein the plurality of characteristics comprises at least one of illuminator shape, illuminator polarization, Jones pupil and focus blur.

15. The method according to claim 13 , wherein the further information comprises information on the layout of a pattern on a patterning means.

16. The method according to claim 13 , wherein the simulated aspects comprise at least one of aerial image intensity, normalized image log slope, mask error factor and process window.

17. The method according to claim 13 , wherein the transformation function is independent of the further information.

18. The method according to claim 13 , wherein the TCCs are computed based on characteristics of Diffractive Optical Element (DOE) selected from a library of standard illumination conditions.

19. The method according to claim 13 , wherein a partial coherence formulation is used compute the plurality of eigen-systems into which the TCCs are decomposed, each eigen-system having a corresponding set of eigenvectors and eigenvalues.

Assignees

• Cao Yu
• Ye Jun
• Koonmen James Patrick
• Hunsche Stefan
• Asml Netherlands Bv

Inventors

• Cao Yu
• Ye Jun
• Koonmen James Patrick
• Hunsche Stefan

Classifications

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G03F7/70508

  Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus · CPC title

• G03F7/70666

  Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system · CPC title