Systems and methods for fabrication of superconducting circuits

Patent metadata

Field	Value
Publication number	US-9634224-B2
Application number	US-201514600962-A
Country	US
Kind code	B2
Filing date	Jan 20, 2015
Priority date	Feb 14, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

In one aspect, fabricating a superconductive integrated circuit with a Josephson junction includes applying oxygen or nitrogen to at least part of a structure formed from an outer superconductive layer to passivate an artifact, if any, left from removing the portion of the outer superconductive layer. In another aspect, a first superconductive layer is deposited, a second superconductive layer is deposited on the first superconductive layer, an oxide layer is formed on the first superconductive layer, a dielectric layer is deposited on the oxide layer, a portion of the dielectric layer is removed, a first portion of the oxide layer is removed, a second oxide portion is formed in place of the first portion of the oxide layer, and a third superconductive layer is deposited on the dielectric layer and the second oxide portion.

First claim

The invention claimed is:

1. A method of fabricating a Josephson junction, the method comprising:
depositing an inner superconductive layer, the inner superconductive layer comprising a material that is superconductive in a range of critical temperatures;
forming an oxide layer that overlies at least part of the inner superconductive layer;
depositing an outer superconductive layer to overlie at least part of the oxide layer, the outer superconductive layer comprising a material that is superconductive in a range of critical temperatures;
forming a mask layer that overlies at least part of the outer superconductive layer;
removing a first portion of the mask layer;
removing a first portion of the outer superconductive layer to form at least one structure from the outer superconductive layer, the at least one structure comprising at least one lateral exposed surface;
applying an oxygen plasma or a nitrogen plasma to the at least one lateral exposed surface of the at least one structure to convert at least part of the at least one lateral surface into a second oxide layer or a nitride layer; and
after applying the oxygen plasma or the nitrogen plasma to the at least one lateral exposed surface of the at least one structure, removing the mask layer to expose at least a portion of an upper surface of the at least one structure.

2. The method of claim 1 wherein the removing the first portion of the outer superconducting layer is performed after the removing the first portion of the mask layer, and the applying the oxygen plasma or the nitrogen plasma to the at least one lateral exposed surface of the at least one structure is performed after the removing of the first portion of the outer superconductive layer.

3. The method of claim 1 wherein the depositing the inner superconductive layer includes depositing a layer of niobium or aluminum; the depositing the outer superconductive layer includes depositing a layer of niobium; and the forming the oxide layer includes forming a layer of niobium oxide or aluminum oxide.

4. The method of claim 1 wherein the removing the first portion of the outer superconductive layer includes reactive-ion etching the portion of the outer superconductive layer to form a junction that extends from the oxide layer and which has at least one lateral exposed surface.

5. The method of claim 1 , further comprising:
depositing a dielectric layer to overlie at least part of a substrate,
wherein the depositing the inner superconductive layer includes depositing the inner superconductive layer to overlie at least part of the dielectric layer.

6. The method of claim 1 , further comprising:
depositing an intermediate superconductive layer to overlie at least part of the inner superconductive layer, the intermediate superconductive layer comprising a material that is superconductive in a range of critical temperatures.

7. The method of claim 6 wherein
the depositing the inner superconductive layer includes depositing a layer of niobium;
the depositing the intermediate superconductive layer includes depositing a layer of aluminum;
the depositing the outer superconductive layer includes depositing a layer of niobium; and
the forming the oxide layer includes forming a layer of aluminum oxide.

8. The method of claim 1 ,
wherein the applying the oxygen plasma to the at least one lateral exposed surface of the at least one structure includes applying an oxygen plasma to the at least one lateral exposed surface of the at least one structure on which the mask layer is not formed.

9. The method of claim 8 wherein the applying the oxygen plasma to the at least one lateral exposed surface of the at least one structure on which the mask layer is not formed includes applying the oxygen plasma to one or more portions of the outer superconductive layer disposed between the mask layer and the oxide layer.

10. The method of claim 1 wherein the forming the mask layer that overlies the outer superconductive layer includes forming a mask layer on an upper surface of the outer superconductive layer.

Assignees

• D Wave Systems Inc

Inventors

• Ladizinsky Eric
• Ladizinsky Nicolas
• Yao Jason
• Oh Byong Hyop
• Neufeld Richard David

Classifications

• H01L39/2493 Primary

  Electricity · mapped topic

• H01L39/223

  Electricity · mapped topic

• H01L27/18

  Electricity · mapped topic

• H10N60/12 Primary

  Josephson-effect devices · CPC title

• H10N60/0912 Primary

  of Josephson-effect devices · CPC title