Chemical mechanical polishing pad composite polishing layer formulation

Patent metadata

Field	Value
Publication number	US-9630293-B2
Application number	US-201514751385-A
Country	US
Kind code	B2
Filing date	Jun 26, 2015
Priority date	Jun 26, 2015
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

First claim

We claim:

1. A chemical mechanical polishing pad, comprising:
a polishing layer having a polishing surface, a base surface and an average thickness, T P-avg , measured normal to the polishing surface from the base surface to the polishing surface;
wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase;
wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses having an average recess depth, D avg , from the polishing surface measured normal to the polishing surface from the polishing surface toward the base surface;
wherein the average recess depth, D avg , is less than the average thickness, T p-avg ;
wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase;
wherein the first continuous non-fugitive polymeric phase is a reaction product of a first continuous phase isocyanate-terminated urethane prepolymer having 8 to 12wt % unreacted NCO groups and a first continuous phase curative;
wherein the second non-fugitive polymeric phase is selected from a second continuous non-fugitive polymeric phase and a second discontinuous non-fugitive polymeric phase;
wherein the second non-fugitive polymeric phase is formed by combining a poly side (P) liquid component and an iso side (I) liquid component;
wherein the poly side (P) liquid component comprises at least one of a (P) side polyol, a (P) side polyamine and a (P) side alcohol amine;
wherein the iso side (I) liquid component, comprising at least one (I) side polyfunctional isocyanate;
wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %;
wherein the second non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %; and,
wherein the polishing surface is adapted for polishing a substrate so that the first continuous non-fugitive polymeric phase and the second non-fugitive polymeric phase wear evenly from the polishing surface.

2. The chemical mechanical polishing pad of claim 1 , wherein the second non-fugitive polymeric phase occupying the plurality of periodic recesses has an average height, H avg , measured normal to the polishing surface from the base surface of the polishing layer toward the polishing surface; and, wherein an absolute value of a difference, ΔS, between the average thickness, T P-avg , and the average height, H avg , is ≦0.5 μm.

3. The chemical mechanical polishing pad of claim 2 ; wherein the first continuous non-fugitive polymeric phase contains a plurality of hollow core polymeric materials; wherein the plurality of hollow core polymeric materials is incorporated in the first continuous non-fugitive polymeric phase at 1 to 58 vol %.

4. The chemical mechanical polishing pad of claim 2 , wherein the plurality of periodic recesses is a group of at least two concentric recesses and wherein the average recess depth, D avg , is ≧15 mils, a width of ≧5 mils and a pitch of ≧10 mils.

5. The chemical mechanical polishing pad of claim 2 , wherein the plurality of periodic recesses is a group of at least two cross-hatched recesses.

6. The chemical mechanical polishing pad of claim 2 , further comprising:
at least one groove formed in the polishing layer at the polishing surface; wherein the at least one groove has a groove depth, G depth , from the polishing surface measured in a direction normal to the polishing surface from the polishing surface toward the base surface.

7. The chemical mechanical polishing pad of claim 6 , wherein the at least one groove is a group of at least two concentric grooves.

8. The chemical mechanical polishing pad of claim 6 , wherein the at least one groove is at least one spiral groove.

9. The chemical mechanical polishing pad of claim 6 , wherein the at least one groove is provided in a cross hatch pattern.

10. The chemical mechanical polishing pad as claimed in claim 1 , wherein there are chemical bonds between the first continuous non-fugitive polymeric phase and the second non-fugitive polymeric phase.

11. A method of polishing a substrate, comprising:
providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;
providing a chemical mechanical polishing pad according to claim 1 ;
creating dynamic contact between the polishing surface of the polishing layer and the substrate to polish a surface of the substrate; and,
conditioning of the polishing surface with an abrasive conditioner.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Dow Global Technologies Llc

Inventors

• Qian Bainian
• Kozhukh Julia
• Brugarolas Brufau Teresa
• Lugo Diego
• Jacob George C
• Miller Jeffrey B
• Tran Tony Quan
• Stack Marc R
• Hendron Jeffrey James

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/26 Primary

  characterised by the shape of the lapping pad surface, e.g. grooved · CPC title

• B24B1/00

  Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes · CPC title

• G02B1/12

  by surface treatment, e.g. by irradiation · CPC title