Fabrication of correlated electron material devices

Patent metadata

Field	Value
Publication number	US-9627615-B1
Application number	US-201615006889-A
Country	US
Kind code	B1
Filing date	Jan 26, 2016
Priority date	Jan 26, 2016
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

First claim

What is claimed is:

1. A method comprising:
exposing a substrate, in a chamber, to a first precursor in a gaseous state, the first precursor comprising a transition metal oxide, a transition metal, a transition metal compound, or any combination thereof, and a first ligand;
exposing the substrate to a second precursor in a gaseous state, the second precursor comprising an oxide so as to form a first layer of a film of correlated electron material; and
repeating the exposing of the substrate to the first and second precursors a sufficient number of times so as to form additional layers of the film of correlated electron material, the film of correlated electronic material exhibiting a first impedance state and a second impedance state, the first impedance state and the second impedance state to be substantially dissimilar from one another, the film of correlated electron material comprising an electron back-donating material in an atomic concentration of between 0.1% and 10.0%.

2. The method of claim 1 , wherein the electron back-donating material comprises carbonyl.

3. The method of claim 1 , further comprising purging the chamber of the first precursor for between 0.5 seconds and 180.0 seconds.

4. The method of claim 1 , wherein the exposing the substrate to the first precursor occurs over a duration of between 0.5 seconds and 180.0 seconds.

5. The method of claim 1 , further comprising repeating the exposing of the substrate between 50 and 900 times.

6. The method of claim 1 , further comprising repeating the exposing of the substrate until a thickness of the film of correlated electron material reaches between 1.5 nm and 150.0 nm.

7. The method of claim 1 , wherein the second precursor comprises oxygen (O 2 ), ozone (O 3 ), water (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O) or hydrogen peroxide (H 2 O 2 ), or any combination thereof.

8. The method of claim 1 , wherein the exposing of the substrate to the first precursor, the exposing of the substrate to a second precursor, or any combination thereof, occurs at a temperature of between 20.0° and 1000.0° C.

9. The method of claim 1 , additionally comprising annealing the exposed substrate in the chamber.

10. The method of claim 9 , further comprising raising the temperature of the chamber to between 20.0° C. and 900.0° C. prior to initiating the annealing.

11. The method of claim 9 , wherein the exposed substrate is annealed in an environment comprising gaseous nitrogen (N 2 ), hydrogen (H 2 ), oxygen (O 2 ), water or steam (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), ozone (O 3 ), argon (Ar), helium (He), ammonia (NH 3 ), carbon monoxide (CO), methane (CH 4 ), acetylene (C 2 H 2 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ) or butane (C 4 H 10 ), or any combination thereof.

12. A method comprising:
exposing a substrate, in a chamber, to a first precursor in a gaseous state, the first precursor comprising a transition metal oxide, a transition metal, a transition metal compound, or any combination thereof, and a first ligand;
exposing the substrate to a second precursor in a gaseous state, the second precursor comprising an oxide so as to form a first layer of a film of correlated electron material; and
repeating the exposing of the substrate to the first and second precursors a sufficient number of times so as to form additional layers of the film of correlated electron material, the film of correlated electronic material exhibiting a first impedance state and a second impedance state, the first impedance state and the second impedance state to be substantially dissimilar from one another, the first precursor comprising nickel amidinate (Ni(AMD)), nickel dicyclopentadienyl (Ni(Cp) 2 ), nickel diethylcyclopentadienyl (Ni(EtCp) 2 ), Bis(2,2,6,6-tetramethylheptane-3,5-dionato)Ni(II) (Ni(thd) 2 ), nickel acetyl acetonate (Ni(acac) 2 ), bis(methylcyclopentadienyl)nickel (Ni(CH 3 C 5 H 4 ) 2 ), nickel dimethylglyoximate (Ni(dmg) 2 ), nickel 2-amino-pent-2-en-4-onato (Ni(apo) 2 ), Ni(dmamb) 2 (in which dmamb=1-dimethylamino-2-methyl-2-butanolate), Ni(dmamp) 2 (in which dmamp=1-dimethylamino-2-methyl-2-propanolate), Bis(pentamethylcyclopentadienyl)nickel (Ni(C 5 (CH 3 ) 5 ) 2 ) or nickel carbonyl (Ni(CO) 4 ), or any combination thereof, in a gaseous state.

13. The method of claim 12 , wherein the film of correlated electron material comprises an electron back-donating material in an atomic concentration of between 0.1% and 10.0%.

14. The method of claim 13 , wherein the electron back-donating material comprises carbonyl.

15. The method of claim 12 , further comprising purging the chamber of the first precursor for between 0.5 seconds and 180.0 seconds.

16. The method of claim 12 , wherein the exposing the substrate to the first precursor occurs over a duration of between 0.5 seconds and 180.0 seconds.

17. The method of claim 12 , further comprising repeating the exposing of the substrate between 50 and 900 times.

18. The method of claim 12 , further comprising repeating the exposing of the substrate until a thickness of the film of correlated electron material reaches between 1.5 nm and 150.0 nm.

19. The method of claim 12 , wherein the second precursor comprises oxygen (O 2 ), ozone (O 3 ), water (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O) or hydrogen peroxide (H 2 O 2 ), or any combination thereof.

20. The method of claim 12 , wherein the exposing of the substrate to the first precursor, the exposing of the substrate to a second precursor, or any combination thereof, occurs at a temperature of between 20.0° and 1000.0° C.

21. The method of claim 12 , additionally comprising annealing the exposed substrate in the chamber.

22. The method of claim 21 , further comprising raising the temperature of the chamber to between 20.0° C. and 900.0° C. prior to initiating the annealing.

23. The method of claim 21 , wherein the exposed substrate is annealed in an environment comprising gaseous nitrogen (N 2 ), hydrogen (H 2 ), oxygen (O 2 ), water or steam (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), ozone (O 3 ), argon (Ar), helium (He), ammonia (NH 3 ), carbon monoxide (CO), methane (CH 4 ), acetylene (C 2 H 2 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ) or butane (C 4 H 10 ), or any combination thereof.

Assignees

• Advanced Risc Mach Ltd
• Advanced Risc Mach Ltd

Inventors

• Reid Kimberly G
• Paz De Araujo Carlos Alberto
• Shifren Lucian

Classifications

• H01L45/147

  Electricity · mapped topic

• G11C2013/0078

  Write using current through the cell · CPC title

• G11C13/0069

  Writing or programming circuits or methods · CPC title

• H01L45/1253

  Electricity · mapped topic

• G11C13/004

  Reading or sensing circuits or methods · CPC title