Method for fabricating selector and semiconductor device including the same
US-2024237559-A1 · Jul 11, 2024 · US
Morphology control of ultra-thin MeOx layer
US9178140B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9178140-B2 |
| Application number | US-201514624209-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 17, 2015 |
| Priority date | Dec 21, 2012 |
| Publication date | Nov 3, 2015 |
| Grant date | Nov 3, 2015 |
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Abstract
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A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A device comprising: a first layer operable as a first electrode; a second layer disposed over the first layer, wherein the second layer comprises one of hafnium oxynitride, zirconium oxynitride, aluminum oxynitride, tantalum oxynitride, hafnium nitride, zirconium nitride, silicon nitride, aluminum nitride, titanium nitride, vanadium nitride, niobium nitride, or tungsten nitride, wherein the second layer directly interfaces the first layer, wher…
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Classifications
Electricity · mapped topic
- H10N70/25Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9178140B2 cover?
- A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive …
- Who is the assignee on this patent?
- Intermolecular Inc, Toshiba Kk, Sandisk 3D Llc, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10N70/25. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).