Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
US9627260B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9627260-B2 |
| Application number | US-201615077423-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2016 |
| Priority date | Mar 23, 2015 |
| Publication date | Apr 18, 2017 |
| Grant date | Apr 18, 2017 |
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Official abstract text for this publication.
A workpiece cutting method of cutting a workpiece having a front side on which a plurality of crossing division lines are formed to define a plurality of separate regions where a plurality of devices are each formed is disclosed. The workpiece cutting method includes a workpiece cutting step of cutting the workpiece held on a first chuck table along the division lines by using a cutting blade, a dummy wafer cutting step of cutting a dummy wafer held on a second chuck table by using the cutting blade, a dummy wafer imaging step of imaging a cut groove formed on the dummy wafer in the dummy wafer cutting step, by using an imaging unit to thereby obtain a detected image, and a determining step of determining the condition of the cutting blade from the condition of chippings formed on both sides of the cut groove in the detected image.
Opening claim text (preview).
What is claimed is: 1. A workpiece cutting method of cutting a workpiece having a front side on which crossing division lines are formed to define a plurality of separate regions where a plurality of devices are each formed, said workpiece cutting method comprising: a workpiece holding step of holding said workpiece on a first chuck table; a dummy wafer holding step of holding a dummy wafer on a second chuck table provided independently of said first chuck table; a workpiece cutting step of cutting said workpiece held on said first chuck table along said division lines by using a cutting blade; a dummy wafer cutting step of cutting said dummy wafer held on said second chuck table by using said cutting blade; a dummy wafer imaging step of imaging a cut groove formed on said dummy wafer in said dummy wafer cutting step, by using mounted imaging means to thereby obtain a detected image; and a determining step of determining the condition of said cutting blade from the condition of chippings formed on both sides of said cut groove in said detected image; wherein when it is determined in said determining step that the condition of said cutting blade is normal, said workpiece cutting step is continued, whereas when it is determined in said determining step that the condition of said cutting blade is abnormal, said workpiece cutting step is stopped. 2. The workpiece cutting method according to claim 1 , wherein the condition of said cutting blade is determined in said determining step according to any one of factors including the length or width of each chipping, the number of said chippings, and the area of each chipping. 3. The workpiece cutting method according to claim 1 , wherein said dummy wafer has a polished surface, and said dummy wafer is held on said second chuck table in the condition where said polished surface of said dummy wafer is exposed in said dummy wafer holding step.
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
characterised by multiple measurements, corrections, marking or sorting processes · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Cutting or separating of wafers, substrates or parts of devices · CPC title
Devices for the automatic drive or the program control of the machines · CPC title
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