Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns

Patent metadata

Field	Value
Publication number	US-9620406-B2
Application number	US-201514968999-A
Country	US
Kind code	B2
Filing date	Dec 15, 2015
Priority date	Jan 27, 2015
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.

First claim

What is claimed is:

1. A method for fabricating a semiconductor device, the method comprising:
forming a first fin-shaped pattern that includes an upper part and a lower part on a substrate;
removing a portion of the upper part of the first fin-shaped pattern so as to reduce a width of the upper part of the first fin-shaped pattern at a first height above an upper surface of the substrate in order to form a second fin-shaped pattern;
forming a dummy gate electrode that intersects the second fin-shaped pattern on the second fin-shaped pattern; and
removing a portion of an upper part of the second fin-shaped pattern after forming the dummy gate electrode so as to reduce a width of the upper part of the second fin-shaped pattern at the first height above the upper surface of the substrate in order to form a third fin-shaped pattern.

2. The method of claim 1 , wherein removing a portion of an upper part of the second fin-shaped pattern includes forming a first oxide film along a profile of the upper part of the first fin-shaped pattern, and then removing the first oxide film.

3. The method of claim 1 , wherein removing a portion of an upper part of the second fin-shaped pattern includes:
forming a second oxide film along a profile of the upper part of the second fin-shaped pattern before forming the dummy gate electrode, and
removing the second oxide film after forming the dummy gate electrode.

4. The method of claim 3 , further comprising forming a third oxide film along a profile of an upper part of the third fin-shaped pattern by oxidizing a portion of the upper part of the third fm-shaped pattern.

5. The method of claim 1 , wherein the first fin-shaped pattern includes a Sidewall, an upper surface and a corner portion in which the sidewall and the upper surface meet, the method further comprising rounding the corner portion by etching the first fin-shaped pattern before forming the second fin-shaped pattern.

6. The method of claim 1 , wherein forming the first fin-shaped pattern includes:
forming a fourth fin-shaped pattern including an upper part and a lower part on a substrate,
forming a field insulating film that directly contacts the lower part of the fourth fin-shaped and that does not directly contact the upper part of the fourth fin-shaped pattern, and
removing a portion of the upper part of the fourth fin-shaped pattern after forming the field insulating film.

7. The method of claim 6 , wherein forming the first fin-shaped pattern includes:
forming an oxide film along a profile of the upper part of the fourth tin-shaped pattern, and
removing the oxide film.

8. The method of claim 6 , wherein removing the portion of the upper part of the fourth fin-shaped pattern during the formation of the first fin-shaped pattern reduces a width of the upper part of the fourth fin-shaped pattern at the first height.

9. The method of claim 1 , further comprising forming recesses in the second fin-shaped pattern by etching both sides of the dummy gate electrode and then forming source/drains in the respective recesses prior to forming the third fin-shaped pattern.

10. A method for fabricating a semiconductor device, the method comprising:
forming a first fin-shaped pattern that has an upper part and a lower part on a substrate;
forming a first oxide film along a profile of the first fin-shaped pattern by oxidizing a portion of the first fin-shaped pattern;
forming a second fin-shaped pattern by removing the first oxide film;
forming a second oxide film along a profile of the second fin-shaped pattern by oxidizing a portion of the second fin-shaped pattern;
forming a first gate electrode that intersects the second fin-shaped pattern on the second oxide film;
forming a trench exposing the second oxide film by removing the first gate electrode; and
forming a third fin-shaped pattern by removing the second oxide film which is exposed by the trench.

11. The method of claim 10 , wherein forming the first fin-shaped pattern includes
forming a field insulating film on the substrate, the field insulating film directly contacting the lower part of the first fin-shaped pattern and not directly contacting the upper part of the first fin-shaped pattern.

12. The method of claim 11 , further comprising:
etching a corner portion of the first fin-shaped pattern at which an upper surface and a sidewall of the first fin-shaped pattern meet to round the corner portion of the first fin-shaped pattern prior to forming the first oxide film.

13. The method of claim 10 , wherein forming the first fin-shaped pattern includes
forming a fourth fin-shaped pattern that has an upper part and a lower part on the substrate;
forming a field insulating film which directly contacts the lower part of the fourth fin-shaped pattern and which does not directly contact the upper part of the fourth fin-shaped pattern;
forming a fourth oxide film along a profile of the fourth fin-shaped pattern by oxidizing a part of the fourth fin-shaped pattern after forming the field insulating film; and
removing the fourth oxide film.

14. The method of claim 13 , wherein oxidizing the part of the fourth fin-shaped pattern during the formation of the first fin-shaped pattern reduces a width of the upper part of the fourth fin-shaped pattern at a first height above a lower surface of the substrate and wherein oxidizing the portion of the first fin-shaped pattern reduces a width of the upper part of the first fin-shaped pattern at the first height above the lower surface of the substrate.

15. A method of fabricating a semiconductor device, the method comprising:
forming a first fin-shaped pattern on a substrate;
converting an outer portion of an upper part of the first fin-shaped pattern into a first oxide film so as to reduce a width of the upper part of the first fin-shaped pattern at a first height above a lower surface of the substrate and so as to reduce a height of the first fin-shaped pattern above an upper surface of the substrate;
forming a second fin-shaped pattern by removing the first oxide film;
converting an outer portion of an upper part of the second fin-shaped pattern into a second oxide film so as to reduce a width of the upper part of the second fin-shaped pattern at the first height above the lower surface of the substrate and so as to reduce a height of the second fin-shaped pattern above the upper surface of the substrate; and
forming a third fin-shaped pattern by removing at least a portion of the second oxide film.

16. The method of claim 15 , wherein the third fin-shaped pattern extends in a first direction, the method further comprising:
forming a field insulating film that covers sidewalls of a lower part of the first fin-shaped pattern prior to forming the second fin-shaped pattern; and
forming an electrode structure on the substrate that extends in a first direction that crosses the first direction after forming the second fin-shaped pattern.

17. The method of claim 15 , wherein a width of a lower part of the third fin-shaped pattern is greater than a width of an upper part of the third fin-shaped pattern and equal to a width of a lower part of the second fin-shaped pattern.

18. The method of claim 15 , the method further comprising:
forming a dummy gate electrode that intersects the second fin-shaped pattern;
forming spacers on sidewalls of the dummy gate electrode and on the second oxide film, and
wherein removing at least the portion of the second oxide film comprises removing the portion of the second oxide film that is exposed by the spacers.

Assignees

• You Jung-Gun
• Park Se-Wan
• Do Seung-Woo
• Park In-Won
• Sung Sug-Hyun
• Samsung Electronics Co Ltd

Inventors

• You Jung-Gun
• Park Se-Wan
• Do Seung-Woo
• Park In-Won
• Sung Sug-Hyun

Classifications

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10D30/611

  having multiple independently-addressable gate electrodes influencing the same channel (FinFETs having multiple distinct gate electrodes H10D30/6215; multi-gate TFT H10D30/6733) · CPC title