Method and apparatus for cost function based simultaneous OPC and SBAR optimization

Patent metadata

Field	Value
Publication number	US-9619607-B2
Application number	US-201414462187-A
Country	US
Kind code	B2
Filing date	Aug 18, 2014
Priority date	Jul 1, 2011
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

Described herein is a method for obtaining a preferred layout for a lithographic process, the method comprising: identifying an initial layout including a plurality of features; and reconfiguring the features until a termination condition is satisfied, thereby obtaining the preferred layout; wherein the reconfiguring comprises evaluating a cost function that measures how a lithographic metric is affected by a set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of characteristics of the features.

First claim

What is claimed is:

1. A method to obtain a pattern layout for a lithographic process, the method comprising:
identifying an initial pattern layout including a plurality of features;
performing (i) splitting certain one or more of the features into two or more discrete features, or (ii) joining two or more of the features into a single feature, or (iii) both (i) and (ii);
reconfiguring the features with a set of changes to the features; and
determining if a termination condition is satisfied with respect to the set of changes to the features, thereby obtaining an electronic data representation of a desired pattern layout for patterning a substrate using a lithographic process;
wherein the determining comprises evaluating, by a hardware computer, a cost function that measures how a lithographic metric is affected by the set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of one or more characteristics of the features.

2. The method of claim 1 , wherein expanding the cost function comprises expanding the cost function into derivatives of the lithographic metric with respect to the one or more characteristics of the features.

3. The method of claim 2 , wherein the determining comprises omitting one or more terms with a derivative above a predetermined order from the expanded cost function.

4. The method of claim 1 , wherein the features that are reconfigured include one or more main features and one or more assist features.

5. The method of claim 1 , wherein the features include one or more sub-resolution assist features (SRAF) and/or one or more sub-resolution inverse features (SRIF).

6. The method of claim 4 , wherein the reconfiguring comprises simultaneously reconfiguring the one or more main features and the one or more assist features.

7. The method of claim 1 , further comprising adding a plurality of assist features to the initial layout using a predetermined rule and/or a model of the lithographic process.

8. The method of claim 1 , wherein the determining comprises calculating a Jacobian matrix.

9. The method of claim 1 , wherein the determining comprises expanding the cost function using a Jacobian matrix.

10. The method of claim 1 , wherein the one or more characteristics of the features are the set of changes to the features.

11. The method of claim 1 , wherein the set of changes includes movement of one or more segments of a boundary of one or more of the features.

12. The method of claim 1 , wherein the set of changes includes a change of a shape of one or more of the features.

13. The method of claim 1 , wherein the set of changes includes a change of a location of one or more of the features.

14. The method of claim 1 , wherein the cost function comprises a function of at least one selected from:
relative alignment of at least a pair of the features,
magnitude of the change to one or more of the features from the initial layout, and
a characteristic of a resist image or an aerial image.

15. The method of claim 1 , wherein the cost function comprises a function of a probability of a function of the features and a process window defined by the plurality of lithographic process conditions having a value outside a permitted range.

16. The method of claim 15 , wherein the plurality of lithographic process conditions comprise a plurality of different focus and dose values.

17. The method of claim 2 , wherein the derivatives are reused in one or more reconfiguring steps succeeding the reconfiguring.

18. The method of claim 1 , wherein the termination condition includes one or more selected from: minimization of the cost function; maximization of the cost function; reaching a preset number of iterations; reaching a value of the cost function equal to or beyond a preset threshold value; reaching a predefined computation time; and/or reaching a value of the cost function within an acceptable error limit.

19. The method of claim 1 , wherein the reconfiguring is performed under a constraint dictating a range of at least some one of the changes to the features.

20. The method of claim 1 , wherein the cost function comprises a function of one or more selected from the following: edge placement error, critical dimension uniformity, dose variation, focus variation, process condition variation, mask error (MEEF), mask complexity, resist contour distance, worst defect size, best focus shift, and/or mask rule constraint.

21. The method of claim 1 , wherein reconfiguring includes:
dissecting a feature into a plurality of segments, and
moving one or more of the segments of the feature independently from one or more other of the segments of the feature.

22. The method of claim 21 , further comprising:
placing evaluation points on the segments,
wherein determining includes evaluating the cost function over all of the evaluation points.

23. A non-transitory computer program product comprising a computer readable storage medium having instructions recorded thereon, the instructions when executed by a computer implementing a method to obtain a pattern layout for a lithographic process, the method comprising:
identifying an initial pattern layout including a plurality of features;
performing (i) splitting certain one or more of the features into two or more discrete features, or (ii) joining two or more of the features into a single feature, or (iii) both (i) and (ii);
reconfiguring the features with a set of changes to the features; and
determining if a termination condition is satisfied with respect to the set of changes to the features, thereby obtaining an electronic representation of a desired pattern layout for patterning a substrate using a lithographic process;
wherein the determining comprises evaluating, by the computer, a cost function that measures how a lithographic metric is affected by the set of changes to the features for a plurality of lithographic process conditions, and expanding the cost function into a series of terms at least some of which are functions of one or more characteristics of the features.

24. The computer program product of claim 23 , wherein the features that are reconfigured include one or more main features and one or more assist features.

25. The computer program product of claim 24 , wherein the reconfiguring comprises simultaneously reconfiguring the one or more main features and the one or more assist features.

Assignees

• Asml Netherlands Bv

Inventors

• Tao Jun
• Chen Been-Der
• Lu Yen-Wen
• Li Jiangwei
• Tsai Min-Chun
• Mao Dong

Classifications

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G03F7/70441

  Optical proximity correction [OPC] · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G06F17/5081 Primary

  Physics · mapped topic