Display device and electronic device

Patent metadata

Field	Value
Publication number	US-9606408-B2
Application number	US-201615001325-A
Country	US
Kind code	B2
Filing date	Jan 20, 2016
Priority date	Sep 29, 2006
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor; and
a first conductive layer, a second conductive layer, and a third conductive layer,
wherein a first electrode of the first transistor and a first electrode of the second transistor are electrically connected with each other,
wherein a gate electrode of the first transistor, a gate electrode of the fourth transistor, a first electrode of the fifth transistor, a first electrode of the sixth transistor, and a first electrode of the seventh transistor are electrically connected with each other,
wherein a gate electrode of the second transistor, a first electrode of the third transistor, a first electrode of the fourth transistor, a gate electrode of the sixth transistor, and a first electrode of the eighth transistor are electrically connected with each other,
wherein a gate electrode of the fifth transistor and a gate electrode of the eighth transistor are electrically connected with each other,
wherein a second electrode of the second transistor, a second electrode of the fourth transistor, a second electrode of the sixth transistor, a second electrode of the seventh transistor, and a second electrode of the eighth transistor are electrically connected with each other,
wherein the first conductive layer includes the first electrode of the third transistor and the first electrode of the fourth transistor,
wherein the second conductive layer includes the gate electrode of the second transistor and the gate electrode of the sixth transistor,
wherein the third conductive layer includes the second electrode of the second transistor, the second electrode of the fourth transistor, the second electrode of the sixth transistor, and the second electrode of the eighth transistor.

2. The semiconductor device according to claim 1 , wherein the semiconductor device is incorporated in one selected from the group consisting of a camera, a computer, an image reproducing device, a goggle-type display, and a game machine.

3. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor; and
a first conductive layer, a second conductive layer, and a third conductive layer,
wherein a first electrode of the first transistor and a first electrode of the second transistor are electrically connected with each other,
wherein a gate electrode of the first transistor, a gate electrode of the fourth transistor, a first electrode of the fifth transistor, a first electrode of the sixth transistor, and a first electrode of the seventh transistor are electrically connected with each other,
wherein a gate electrode of the second transistor, a first electrode of the third transistor, a first electrode of the fourth transistor, a gate electrode of the sixth transistor, and a first electrode of the eighth transistor are electrically connected with each other,
wherein a gate electrode of the fifth transistor and a gate electrode of the eighth transistor are electrically connected with each other,
wherein a second electrode of the second transistor, a second electrode of the fourth transistor, a second electrode of the sixth transistor, a second electrode of the seventh transistor, and a second electrode of the eighth transistor are electrically connected with each other,
wherein the first conductive layer includes the first electrode of the third transistor and the first electrode of the fourth transistor,
wherein the second conductive layer includes the gate electrode of the second transistor and the gate electrode of the sixth transistor,
wherein the third conductive layer includes the second electrode of the second transistor, the second electrode of the fourth transistor, the second electrode of the sixth transistor, and the second electrode of the eighth transistor,
wherein a value of a ratio W/L of a channel width W to a channel length L of the fourth transistor is larger than that of the third transistor.

4. The semiconductor device according to claim 3 , wherein the semiconductor device is incorporated in one selected from the group consisting of a camera, a computer, an image reproducing device, a goggle-type display, and a game machine.

5. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, and a tenth transistor; and
a first conductive layer, a second conductive layer, and a third conductive layer,
wherein a first electrode of the first transistor and a first electrode of the second transistor are electrically connected with each other,
wherein a gate electrode of the first transistor, a gate electrode of the fourth transistor, a first electrode of the fifth transistor, a first electrode of the sixth transistor, a first electrode of the seventh transistor, and a gate electrode of the ninth transistor are electrically connected with each other,
wherein a gate electrode of the second transistor, a first electrode of the third transistor, a first electrode of the fourth transistor, a gate electrode of the sixth transistor, a first electrode of the eighth transistor, and a gate electrode of the tenth transistor are electrically connected with each other,
wherein a gate electrode of the fifth transistor and a gate electrode of the eighth transistor are electrically connected with each other,
wherein a second electrode of the second transistor, a second electrode of the fourth transistor, a second electrode of the sixth transistor, a second electrode of the seventh transistor, and a second electrode of the eighth transistor are electrically connected with each other,
wherein a first electrode of the ninth transistor and a first electrode of the tenth transistor are electrically connected with each other,
wherein the first conductive layer includes the first electrode of the third transistor and the first electrode of the fourth transistor,
wherein the second conductive layer includes the gate electrode of the second transistor and the gate electrode of the sixth transistor,
wherein the third conductive layer includes the second electrode of the second transistor, the second electrode of the fourth transistor, the second electrode of the sixth transistor, and the second electrode of the eighth transistor.

6. The semiconductor device according to claim 5 , wherein a value of a ratio W/L of a channel width W to a channel length L of the ninth transistor is larger than that of the first transistor, that of the second transistor, that of the third transistor, that of the fourth transistor, that of the fifth transistor, that of the sixth transistor, that of the seventh transistor, that of the eighth transistor, and that of the tenth transistor.

7. The semiconductor device according to claim 5 , wherein the semiconductor device is incorporated in one selected from the group consisting of a camera, a computer, an image reproducing device, a goggle-type display, and a game machine.

8. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, and a tenth transistor; and
a first conductive layer, a second conductive layer, and a third conductive layer,
wherein a first electrode of the first transistor and a first electrode of the second transistor are electrically connected wi

Assignees

• Semiconductor Energy Lab

Inventors

• Umezaki Atsushi
• Miyake Hiroyuki

Classifications

• G09G2310/027

  Details of drivers for data electrodes, the drivers handling digital grey scale data, e.g. use of D/A converters · CPC title

• G09G3/3426

  the different display panel areas being distributed in two dimensions, e.g. matrix · CPC title

• G09G2320/0233

  Improving the luminance or brightness uniformity across the screen · CPC title

• G09G2310/0275

  Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current · CPC title

• G09G2310/0262

  The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes · CPC title