MEMS devices and methods for forming same

Patent metadata

Field	Value
Publication number	US-9604843-B2
Application number	US-201514735652-A
Country	US
Kind code	B2
Filing date	Jun 10, 2015
Priority date	Mar 14, 2013
Publication date	Mar 28, 2017
Grant date	Mar 28, 2017

Abstract

Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.

First claim

What is claimed is:

1. A microelectromechanical systems (MEMS) device comprising:
a MEMS wafer comprising at least one MEMS structure;
a first sealed cavity in the MEMS wafer, the first sealed cavity having a first pressure;
a cap wafer bonded to a first side of the MEMS wafer;
a second cavity between the MEMS wafer and the cap wafer, the second cavity having a second pressure, the second pressure being greater than the first pressure;
a carrier wafer bonded to a second side of the MEMS wafer, the second side being opposite the first side;
a third cavity between the carrier wafer and the MEMS wafer, the third cavity having a third pressure, the third pressure being greater than the second pressure; and
a polysilicon layer between the third cavity and the first sealed cavity, the polysilicon layer comprising a first MEMS structure.

2. The MEMS device of claim 1 , wherein the first MEMS structure comprises a pressure sensor.

3. The MEMS device of claim 1 , wherein the MEMS wafer further comprises a fourth sealed cavity having a fourth pressure.

4. The MEMS device of claim 3 , wherein the fourth pressure and the first pressure are a same pressure.

5. The MEMS device of claim 3 , wherein the first sealed cavity and the second cavity comprise a pressure sensor, the third cavity comprises a motion sensor, and the fourth sealed cavity comprises a gyroscope.

6. The MEMS device of claim 1 , wherein the second pressure is from about 0.1 mbar to about 500 mbar.

7. The MEMS device of claim 1 , wherein the third pressure is an ambient pressure.

8. The MEMS device of claim 1 , wherein the second cavity is a sealed cavity.

9. The MEMS device of claim 1 , wherein the first sealed cavity is sealed with a conductive bond.

10. A microelectromechanical systems (MEMS) device comprising:
a MEMS wafer comprising at least one MEMS structure;
a first sealed cavity in the MEMS wafer, the first sealed cavity having a first pressure;
a cap wafer bonded to a first side of the MEMS wafer with a first bonding structure;
a second cavity between the MEMS wafer and the cap wafer, the second cavity having a second pressure, the second pressure being greater than the first pressure, the second cavity having a leak path around the first bonding structure;
a third sealed cavity in the MEMS wafer and between the MEMS wafer and the cap wafer, the third sealed cavity having a third pressure, the third pressure being greater than the first pressure; and
a carrier wafer bonded to a second side of the MEMS wafer, the second side being opposite the first side.

11. The MEMS device of claim 10 , wherein the second pressure is an ambient pressure, the second pressure being greater than the third pressure.

12. The MEMS device of claim 10 further comprising:
a fourth sealed cavity in the MEMS wafer, the fourth sealed cavity having a fourth pressure; and
a fifth cavity between the MEMS wafer and the cap wafer, the fifth cavity having a fifth pressure, the fifth pressure being greater than the first pressure and the fourth pressure.

13. The MEMS device of claim 12 , wherein the first sealed cavity and the second cavity comprise a pressure sensor, the third cavity comprises a motion sensor, and the fourth sealed cavity comprises a gyroscope.

14. The MEMS device of claim 12 , wherein the third sealed cavity is interposed between the first sealed cavity and the fourth sealed cavity.

15. The MEMS device of claim 10 further comprising:
a polysilicon layer between the first sealed cavity and the second cavity, the polysilicon layer comprising a first MEMS structure.

16. The MEMS device of claim 15 , wherein the first MEMS structure comprises a pressure sensor.

17. A microelectromechanical systems (MEMS) device comprising:
a MEMS wafer comprising at least one MEMS structure;
a first sealed cavity in the MEMS wafer, the first sealed cavity having a first pressure;
a second sealed cavity in the MEMS wafer, the second sealed cavity having a second pressure;
a cap wafer bonded to a first side of the MEMS wafer;
a third sealed cavity between the MEMS wafer and the cap wafer, the third sealed cavity having a third pressure, the third pressure being greater than the first pressure and the second pressure, the third sealed cavity being interposed between the first sealed cavity and the second sealed cavity; and
a carrier wafer bonded to a second side of the MEMS wafer, the second side being opposite the first side.

18. The MEMS device of claim 17 further comprising:
a fourth cavity between the MEMS wafer and the cap wafer, the fourth cavity having a fourth pressure, the fourth cavity having a leak path around a bonding structure, the fourth pressure being an ambient pressure.

19. The MEMS device of claim 17 further comprising:
a fifth cavity between the carrier wafer and the MEMS wafer, the fifth cavity having a fifth pressure, the fifth pressure being greater than the third pressure.

20. The MEMS device of claim 17 , wherein the second sealed cavity comprises a gyroscope and the third sealed cavity comprises a motion sensor.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Cheng Chun-Wen
• Chu Chia-Hua

Classifications

• B81B2201/0264

  Pressure sensors · CPC title

• B81B2201/0242

  Gyroscopes · CPC title

• B81B7/0032

  Packages or encapsulation (processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023) · CPC title

• B81C3/001

  Bonding of two components · CPC title

• B81B2201/0235

  Accelerometers · CPC title