Silicon-germanium semiconductor devices and method of making

Patent metadata

Field	Value
Publication number	US-9595449-B1
Application number	US-201514976522-A
Country	US
Kind code	B1
Filing date	Dec 21, 2015
Priority date	Dec 21, 2015
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

Oxidation treatment of a Si 1-x Ge x (0<x<1) substrate forms on the substrate an interfacial layer comprised of silicon oxide and germanium oxide. The presence of germanium oxide in the interfacial layer is deleterious to the quality of the interfacial layer/Si 1-x Ge x conducting channel as evidenced by an increase in charge interface states and a decrease in carrier mobility. Germanium oxide is scavenged from the interfacial layer in a scavenging step comprising heating the interfacial layer/substrate in a hydrogen-containing reducing atmosphere at a temperature of from about 450° C. to about 800° C. to reduce the germanium oxide content of the interfacial layer to not more than about 10% by weight, for example, not more than about 1% by weight, of the weight of the scavenged interfacial layer.

First claim

What is claimed is:

1. A method of refining a mixed silicon oxide-germanium oxide interfacial layer of a silicon-germanium transistor substrate, the method comprising:
contacting (i) hydrogen and (ii) the silicon-germanium transistor substrate at a temperature, pressure, and length of time sufficient to scavenge germanium oxide from the mixed silicon oxide-germanium oxide interfacial layer of the silicon-germanium transistor substrate, leaving silicon oxide remaining; wherein
the contacting is carried out at a temperature from about 450° C. to about 800° C. in a reducing atmosphere having a hydrogen partial pressure of from about 0.1 Torr to about 15,200 Torr.

2. The method of claim 1 wherein the hydrogen partial pressure is from about 10 Torr to about 600 Torr.

3. The method of claim 1 wherein the interfacial layer has a thickness after the scavenging step of from about 0.1 nanometer to about 1 nanometer.

4. The method of claim 1 wherein the substrate has an atomic germanium content of from about 20% to about 95%.

5. The method of claim 1 wherein the scavenging step reduces the residual germanium oxide content of the interfacial layer to not more than about 10% by weight of the total weight of the interfacial layer remaining after the scavenging step.

6. The method of claim 5 wherein the residual germanium oxide content of the interfacial layer is not more than about 1% by weight of the total weight of the interfacial layer.

7. The method of claim 1 wherein after the scavenging step the interfacial layer comprises from about 30% to about 50% by weight silicon and from about 50% to about 70% by weight oxygen.

8. The method of claim 1 wherein the scavenging step is carried out for a time period of from about 1 to about 15 minutes.

9. The method of claim 1 wherein the reducing atmosphere comprises hydrogen.

10. The method of claim 1 wherein the reducing atmosphere comprises hydrogen and, optionally, an inert gas selected from the class consisting of one or more of nitrogen and argon.

11. The method of claim 10 wherein the hydrogen comprises from about 3 volume % to about 20 volume % of the reducing atmosphere.

12. The method of claim 1 wherein the scavenging step is carried out after the application of a high-k dielectric layer over at least a portion of the interfacial layer.

13. The method of claim 12 wherein the high-k dielectric layer is selected from the class consisting of hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, alumina and aluminum silicate, and has a thickness of up to about 3 nanometers.

14. A semiconductor device comprising a silicon-germanium substrate having thereon a silicon oxide interfacial layer made by the method of claim 1 .

15. In a method of making a semiconductor device comprising a silicon-germanium substrate having thereon a silicon oxide-containing interfacial layer formed by oxidizing the silicon-germanium substrate in an oxidation step, the improvement comprising, after the oxidation step:
scavenging germanium oxide from the interfacial layer, leaving silicon oxide remaining;
wherein scavenging germanium oxide is performed by heating the device at a temperature of from about 450° C. to about 800° C. in a reducing atmosphere having a hydrogen partial pressure of from about 0.1 Torr to about 15,200 Torr to reduce the germanium oxide content of the interfacial layer to not more than about 10% by weight of the interfacial layer remaining after the scavenging step.

16. The method of claim 15 wherein the improvement further comprises applying a high-k dielectric layer to at least a portion of the interfacial layer prior to carrying out the scavenging step.

17. The method of claim 15 wherein the improvement further comprises conducting the scavenging step for a period of from about 1 to about 15 minutes.

18. The method of claim 15 wherein the reducing atmosphere comprises hydrogen and, optionally, an inert gas selected from the class consisting of one or more of nitrogen, argon and helium.

19. The method of claim 18 wherein the hydrogen comprises from about 3 volume % to about 20 volume % of the reducing atmosphere.

20. A semiconductor device comprising a silicon-germanium substrate having thereon a silicon oxide interfacial layer made by the method of claim 15 .

Assignees

• IBM

Inventors

• Jagannathan Hemanth
• Lee Choonghyun

Classifications

• H10P14/6308

  of Group IV semiconductors · CPC title

• H10P95/94

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10D64/01356

  the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence) · CPC title