Substrate processing apparatus including auxiliary gas supply port

Patent metadata

Field	Value
Publication number	US-9593415-B2
Application number	US-201214357587-A
Country	US
Kind code	B2
Filing date	Nov 16, 2012
Priority date	Nov 17, 2011
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates, the substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, at least one supply nozzle disposed along an inner wall of the external reaction tube, the at least one supply nozzle having a supply hole for discharging a reaction gas, and at least one exhaust nozzle disposed along the inner wall of the external reaction tube, the at least one exhaust nozzle having an exhaust hole for suctioning an non-reaction gas and byproducts within the process space. The lower chamber includes an auxiliary gas supply port connected to the stacking space defined inside the lower chamber.

First claim

What is claimed is:

1. A substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus comprising:
a lower chamber having an opened upper side, the lower chamber comprising a passage allowing the substrates to pass therethrough in a side thereof;
an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed;
an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates;
a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked and a process position in which the processes with respect to the substrates are performed;
a plurality of supply nozzles disposed along an inner wall of the external reaction tube, the plurality of supply nozzles having a plurality of supply holes for discharging a reaction gas; and
a plurality of exhaust nozzles disposed along the inner wall of the external reaction tube, the plurality of exhaust nozzles having a plurality of exhaust holes for suctioning an non-reaction gas and byproducts within the process space,
wherein the plurality of supply holes are disposed in and along an inner wall of the internal reaction tube to have a phase difference in a circumference direction of the internal reaction tube from each other and to be located at a different height from each other,
wherein the plurality of exhaust holes are disposed in and along the inner wall of the internal reaction tube to have a phase difference in a circumference direction of the internal reaction tube from each other and to be located at a different height from each other,
wherein each of the supply holes is disposed at a same height as a corresponding one of the exhaust holes, and a center of each of the supply holes is symmetric to a center of the corresponding one of the exhaust holes with respect to a center of the internal reaction tube, and
wherein the lower chamber comprises an auxiliary gas supply port connected to a stacking space defined inside the lower chamber.

2. The substrate processing apparatus of claim 1 , wherein the auxiliary gas supply port supplies an inert gas into the stacking space when the processes are performed.

3. The substrate processing apparatus of claim 2 , wherein the stacking space has an inner pressure greater than that of the process space.

4. The substrate processing apparatus of claim 1 , wherein the substrate holder is disposed within the stacking space at the stacking position and disposed within the process space at the process position.

5. The substrate processing apparatus of claim 1 , further comprising a rear exhaust line connected to the exhaust nozzle to discharge the non-reaction gas and the byproducts which are suctioned through the exhaust hole,
wherein the lower chamber comprises an exhaust port connecting the exhaust nozzle to the rear exhaust line and an auxiliary exhaust port connecting the stacking space defined inside the lower chamber to the rear exhaust line.

6. The substrate processing apparatus of claim 5 , further comprising an auxiliary exhaust line connected to the auxiliary exhaust port and a first auxiliary exhaust valve for opening or closing the auxiliary exhaust line,
wherein the first auxiliary exhaust valve opens the auxiliary exhaust line before the processes are performed to exhaust the inside of the stacking space.

7. The substrate processing apparatus of claim 5 , further comprising:
an auxiliary exhaust line connected to the auxiliary exhaust port;
a first auxiliary exhaust valve opening or closing the auxiliary exhaust line;
a front exhaust line connecting the exhaust port to the rear exhaust line;
a pump disposed on the front exhaust line to pump the inside of the front exhaust line;
a main exhaust valve disposed on the front exhaust line to open or close the front exhaust line;
a second auxiliary exhaust valve disposed on a rear side of the first auxiliary exhaust valve to open or close the auxiliary exhaust line;
a connection line connecting the auxiliary exhaust line to the front exhaust line, the connection line having one end connected between the first auxiliary exhaust valve and the second auxiliary exhaust valve and the other end connected to a front portion of the pump; and
a connection valve disposed on the connection line to open or close the connection line,
wherein, before the processes are performed, the first auxiliary exhaust valve, the connection valve, and the main exhaust valve are in opened states, and the second auxiliary exhaust valve is in a closed state.

8. The substrate processing apparatus of claim 5 , further comprising:
an auxiliary exhaust line connected to the auxiliary exhaust port;
a first auxiliary exhaust valve opening or closing the auxiliary exhaust line;
a front exhaust line connecting the exhaust port to the rear exhaust line;
a pump disposed on the front exhaust line to pump the inside of the front exhaust line;
a main exhaust valve disposed on the front exhaust line to open or close the front exhaust line;
a second auxiliary exhaust valve disposed on a rear side of the first auxiliary exhaust valve to open or close the auxiliary exhaust line;
a connection line connecting the auxiliary exhaust line to the front exhaust line, the connection line having one end connected between the first auxiliary exhaust valve and the second auxiliary exhaust valve and the other end connected to a front portion of the pump; and
a connection valve disposed on the connection line to open or close the connection line,
wherein, before the processes are performed, the first and second auxiliary exhaust valves and the main exhaust valve are in opened states, and the connection valve is in a closed state.

9. The substrate processing apparatus of claim 1 , further comprising a diffusion plate disposed on a discharge hole of the auxiliary gas supply port,
wherein the diffusion plate comprises a buffer space connected to the auxiliary gas supply port and a plurality of diffusion holes, each being connected to the buffer space.

10. The substrate processing apparatus of claim 9 , wherein the diffusion holes have first diffusion holes spaced a first spaced distance from each other and second diffusion holes spaced a second spaced distance from each other.

Assignees

• Eugene Technology Co Ltd

Inventors

• Yang Il-Kwang
• Je Sung-Tae
• Song Byoung-Gyu
• Kim Yong-Ki
• Kim Kyong-Hun
• Shin Yang-Sik

Classifications

• H10P72/3312

  Vertical transfer of a batch of workpieces · CPC title

• H10P14/20 Primary

  of semiconductor materials · CPC title

• C23C16/45504

  Laminar flow · CPC title

• C23C16/4412 Primary

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/45512

  Premixing before introduction in the reaction chamber · CPC title