Method for depositing extremely low resistivity tungsten

Patent metadata

Field	Value
Publication number	US-9589808-B2
Application number	US-201314135375-A
Country	US
Kind code	B2
Filing date	Dec 19, 2013
Priority date	Dec 19, 2013
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.

First claim

What is claimed is:

1. A method of forming a tungsten film on a substrate, the method comprising:
providing the substrate with a nitride layer;
annealing the nitride layer;
depositing tungsten directly on the nitride layer to form the tungsten film by introducing a vapor phase tungsten-containing precursor and a boron-containing reactant into a chamber housing the substrate; and
annealing the tungsten film,
wherein the nitride layer is annealed before the tungsten is deposited, and
wherein the nitride layer is annealed at a temperature between about 385° C. and about 445° C.,
wherein annealing the tungsten film reduces the boron content of the tungsten film by a factor of 10.

2. The method of claim 1 , wherein the nitride layer is a tungsten nitride layer.

3. The method of claim 1 , wherein argon gas is flowed during annealing.

4. The method of claim 1 , wherein the tungsten is deposited by chemical vapor deposition.

5. The method of claim 1 , wherein annealing the nitride layer is performed at conditions to change the grain structure of the nitride layer.

6. The method of claim 1 , wherein depositing the tungsten directly on the nitride layer to form the tungsten layer comprises depositing a tungsten nucleation layer on the nitride layer after annealing the nitride layer, and annealing the tungsten nucleation layer.

7. The method of claim 6 , wherein the nucleation layer is annealed at a temperature between about 385° C. and about 445° C.

8. The method of claim 1 , wherein the tungsten film is annealed for no more than 1 minute.

9. The method of claim 1 , wherein the pressure during the annealing of the tungsten film is at least 1 Torr.

10. The method of claim 1 , wherein the tungsten film nucleates on the nitride layer.

11. The method of claim 1 , wherein the annealing the nitride layer does not change the composition of the nitride layer.

12. The method of claim 1 , wherein the nitride layer is a titanium nitride layer.

13. A method of forming a tungsten film on a substrate, the method comprising:
providing the substrate with a nitride layer;
changing the grain structure of the nitride layer; and
depositing tungsten directly on the nitride layer to form the tungsten film by introducing a vapor phase tungsten-containing precursor and a boron-containing reducing agent into a chamber housing the substrate,
wherein the grain structure of the nitride layer is changed before the tungsten is deposited, and
wherein the tungsten film formed on the nitride layer has a boron content of less than 1%.

14. The method of claim 13 , wherein changing the grain structure of the nitride layer comprises annealing the nitride layer.

Assignees

• Lam Res Corp

Inventors

• Bamnolker Hanna
• Humayun Raashina
• Wang Deqi
• Guan Yan

Classifications

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/033

  in openings in dielectrics · CPC title