Semiconductor device and manufacturing method thereof
US-9224792-B2 · Dec 29, 2015 · US
US9583708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9583708-B2 |
| Application number | US-201414291276-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 30, 2014 |
| Priority date | Jul 30, 2013 |
| Publication date | Feb 28, 2017 |
| Grant date | Feb 28, 2017 |
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A mask for deposition includes a mask main body extended in a first direction and having a first thickness, and including ends opposite to each other in the first direction and supported by a frame while a tensile force is applied to the mask in the first direction; and a plurality of active patterns separated from each other in the first direction in a center area of the mask main body, and having a second thickness less than the first thickness.
Opening claim text (preview).
What is claimed is: 1. A mask for deposition, comprising: a mask main body defining: in a same plane, a length of the mask extended in a first direction and a width of the mask which is smaller than the length and extended in a second direction crossing the first direction, ends of the mask which are opposite to each other in the first direction to be supported by a frame while a tensile force is applied to the mask in the first direction, in a thickness direction perpendicular to the plane, a first thickness of the mask as a maximum thickness of the mask main body, and in a center area thereof, a plurality of active patterns of the mask separated from each other in the first direction, the plurality of active patterns defining a second thickness of the mask less than the first thickness, wherein the second thickness defined by the plurality of active patterns defines a plurality of active openings in an active pattern among the plurality of active patterns, wherein the mask main body further defines a first dummy pattern of the mask between an outermost active pattern in the first direction among the plurality of active patterns and an end of the mask, the first dummy pattern defining a third thickness of the mask between the first thickness and the second thickness. 2. The mask of claim 1 , wherein the mask main body further defines a plurality of first dummy patterns of the mask between an outermost active pattern in the first direction among the plurality of active patterns and an end of the mask, the plurality of first dummy patterns defining a third thickness of the mask between the first thickness and the second thickness. 3. The mask of claim 1 , wherein a plurality of first dummy openings are defined in the first dummy pattern, and a first distance between neighboring active openings is less than a second distance between neighboring first dummy openings. 4. The mask of claim 1 , wherein the main mask body further defines: a second dummy pattern of the mask between neighboring active patterns among the plurality of active patterns. 5. The mask of claim 4 , wherein the second dummy pattern defines the second thickness of the mask. 6. The mask of claim 4 , wherein the second dummy pattern defines the third thickness of the mask. 7. The mask of claim 4 , wherein the main mask body further defines a plurality of second dummy patterns of the mask respectively between neighboring active patterns from among the plurality of active patterns. 8. The mask of claim 4 , wherein a plurality of second dummy openings are defined in the second dummy pattern, and a first distance between the neighboring active openings is less than a third distance between neighboring second dummy openings.
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