Inkjet printable etch resist

Patent metadata

Field	Value
Publication number	US-9583669-B2
Application number	US-201213587916-A
Country	US
Kind code	B2
Filing date	Aug 16, 2012
Priority date	Aug 16, 2012
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a semiconductor followed by etching uncoated portions of the semiconductor and simultaneously inhibiting undercutting of the resist. The etched portions may then be metallized to form current tracks.

First claim

What is claimed is:

1. A method comprising:
a) providing a doped semiconductor wafer comprising a front side, a back side, and a pn junction;
b) selectively applying a resist composition on top of the front side of the semiconductor wafer, the resist composition comprises one or more hydrogenated rosin resins, the hydrogenated rosin resins are solids at room temperature, one or more hydrogenated rosin resin esters, the hydrogenated rosin resin esters are liquids at room temperature, wherein a weight ratio of the one or more hydrogenated rosin resins to the one or more hydrogenated rosin resin esters is 2:1 to 4:1 and one or more fatty acids; and
c) applying an etch composition to the semiconductor to etch away exposed sections of the front side of the semiconductor to form current tracks.

2. The method of claim 1 , wherein the front side of the semiconductor further comprises an antireflective layer.

3. The method of claim 1 , wherein the hydrogenated rosin resin is derived from abietic acid or pimaric acid.

4. The method of claim 1 , wherein the hydrogenated rosin resin ester is derived from abietic acid or pimaric acid.

5. The method of claim 1 , wherein an emitter layer of the front side of the semiconductor wafer is n++ doped.

6. The method of claim 1 , wherein the semiconductor wafer is a mono cast wafer, monocrystalline wafer or a polycrystalline wafer.

Assignees

• Dong Hua
• Barr Robert K
• Sun Chemical Corp

Inventors

• Dong Hua
• Barr Robert K

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P30/40

  into insulating materials · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• H10D64/01348

  with substrate doping, e.g. N, Ge or C implantation, before formation of the insulator · CPC title