Thin film transistor and display device
US-9318507-B2 · Apr 19, 2016 · US
Oxide for semiconductor layer of thin film transistor, thin film transistor and display device
US9583633B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9583633-B2 |
| Application number | US-201414392369-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2014 |
| Priority date | Mar 8, 2013 |
| Publication date | Feb 28, 2017 |
| Grant date | Feb 28, 2017 |
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Abstract
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In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×10 15 cm −3 or less, and a mobility satisfies 15 cm2/Vs or more.
First claim
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What is claimed is: 1. An oxide for a semiconductor layer used as a semiconductor layer of a thin film transistor, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×10 15 cm −3 or less, and a mobility satisfies 15 cm2/Vs or more. 2. The oxide for the semiconductor layer of claim 1 , wherein: when a content (atomic %) of each metal element for the total metal elements in the oxide, except for oxygen, is respectively referred to as [In], [Zn] and [Sn], a following relation is satisfied: 1≦[In], 50≦[Zn]≦95, 1≦[Sn]≦30. 3. The oxide for the semiconductor layer of claim 2 , wherein: the oxygen partial pressure is 40% by volume or less. 4. The oxide for the semiconductor layer of claim 1 , wherein: the oxygen partial pressure is 40% by volume or less. 5. A thin film transistor in which the oxide for the semiconductor layer of claim 4 is provided in the semiconductor layer of the thin film transistor. 6. A display device in which the thin film transistor of claim 5 is provided.
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Classifications
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Oxides · CPC title
Electricity · mapped topic
- H01L29/7869Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9583633B2 cover?
- In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×10 15 cm −3 or less, and a mobility satisfies 15…
- Who is the assignee on this patent?
- Samsung Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L29/7869. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).