Semiconductor device and method of forming a shielding layer between stacked semiconductor die

Patent metadata

Field	Value
Publication number	US-9583446-B2
Application number	US-201414553358-A
Country	US
Kind code	B2
Filing date	Nov 25, 2014
Priority date	Mar 25, 2009
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.

First claim

What is claimed:

1. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
forming a shielding layer over the first semiconductor die;
providing a bond wire electrically connected between the shielding layer and a ground point; and
disposing a second semiconductor die over the shielding layer with the bond wire disposed between the first semiconductor die and second semiconductor die.

2. The method of claim 1 , further including forming a first interconnect structure over the first semiconductor die.

3. The method of claim 2 , further including forming a second interconnect structure over the second semiconductor die opposite the first interconnect structure.

4. The method of claim 3 , further including forming a conductive pillar between the first interconnect structure and second interconnect structure.

5. The method of claim 2 , further including forming the bond wire electrically connected between the shielding layer and first interconnect structure.

6. The method of claim 1 , further including forming a conductive via through the first semiconductor die.

7. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
forming a shielding layer over the first semiconductor die;
disposing a second semiconductor die over the shielding layer; and
depositing an encapsulant around the first semiconductor die and second semiconductor die with a contact pad of the first semiconductor die and a contact pad of the second semiconductor die exposed from the encapsulant.

8. The method of claim 7 , further including forming a first interconnect structure over the encapsulant and electrically connected to the shielding layer.

9. The method of claim 8 , further including forming a second interconnect structure over the encapsulant opposite the first interconnect structure.

10. The method of claim 9 , further including forming a conductive pillar between the first interconnect structure and second interconnect structure.

11. The method of claim 7 , further including forming a bond wire between the shielding layer and first interconnect structure.

12. The method of claim 7 , further including forming a conductive via through the first semiconductor die.

13. The method of claim 7 , further including forming an insulating layer between the first semiconductor die and second semiconductor die.

14. A semiconductor device, comprising:
a first semiconductor die;
a shielding layer formed over the first semiconductor die;
a second semiconductor die disposed over the shielding layer;
an encapsulant deposited over the first semiconductor die and second semiconductor die;
a first interconnect structure disposed over the first semiconductor die and electrically connected to the shielding layer; and
a second interconnect structure disposed over the encapsulant opposite the first interconnect structure.

15. The semiconductor device of claim 14 , further including a conductive pillar disposed between the first interconnect structure and second interconnect structure.

16. The semiconductor device of claim 14 , further including a bond wired disposed between the first semiconductor die and second semiconductor die to electrically connect the shielding layer to the first interconnect structure.

17. The semiconductor device of claim 14 , further including a conductive via formed through the first semiconductor die to electrically connect the shielding layer to the first interconnect structure.

18. The semiconductor device of claim 16 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die with the bond wire extending into the insulating layer.

19. A semiconductor device, comprising:
a first semiconductor die;
a ground point;
a shielding layer formed over the first semiconductor die;
a bond wire electrically connected between the shielding layer and ground point; and
a second semiconductor die disposed over the shielding layer with the bond wire disposed between the first semiconductor die and second semiconductor die.

20. The semiconductor device of claim 19 , further including a first interconnect structure formed over the first semiconductor die, wherein the first interconnect structure includes the ground point.

21. The semiconductor device of claim 20 , further including a second interconnect structure formed over the second semiconductor die opposite the first interconnect structure.

22. The semiconductor device of claim 19 , further including a conductive via formed through the first semiconductor die.

23. The semiconductor device of claim 19 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die with a portion of the bond wire extending through the insulating layer.

24. A semiconductor device, comprising:
a first semiconductor die;
a shielding layer formed over the first semiconductor die;
a second semiconductor die disposed over the shielding layer; and
an encapsulant deposited around the first semiconductor die and second semiconductor die with a contact pad of the first semiconductor die and a contact pad of the second semiconductor die exposed from the encapsulant.

25. The semiconductor device of claim 24 , further including a first interconnect structure formed over the first semiconductor die and encapsulant.

26. The semiconductor device of claim 25 , further including a second interconnect structure formed over the second semiconductor die and encapsulant opposite the first interconnect structure.

27. The semiconductor device of claim 25 , further including a bond wire formed between the shielding layer and first interconnect structure.

28. The semiconductor device of claim 24 , further including a conductive via formed through the first semiconductor die to the shielding layer.

29. The semiconductor device of claim 24 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die.

Assignees

• Stats Chippac Ltd
• Stats Chippac Pte Ltd

Inventors

• Pagaila Reza A
• Do Byung Tai
• Suthiwongsunthorn Nathapong

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title