Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus

US9583299B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9583299-B2
Application numberUS-201414455338-A
CountryUS
Kind codeB2
Filing dateAug 8, 2014
Priority dateAug 9, 2013
Publication dateFeb 28, 2017
Grant dateFeb 28, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

First claim

Opening claim text (preview).

What is claimed is: 1. An iridium tip comprising a pyramid structure wherein an apex portion of the pyramid structure has an apex with <210> orientation surrounded by one {100} crystal plane and two {111} crystal planes, wherein the pyramid structure includes a first layer composed of a single iridium atom constituting the apex of the pyramid structure, a second layer immediately below the first layer and composed of three iridium atoms located at vertices of a triangle, and a third layer immediately below the second layer and composed of six iridium atoms located at vertices and sides of a triangle, and wherein the crystal planes of the pyramid structure are defined by the iridium atoms of the first, second, and third layer.

Assignees

Inventors

Classifications

  • with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

  • Means for adjusting the focus · CPC title

  • Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title

  • Details · CPC title

  • Cooling arrangements · CPC title

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What does patent US9583299B2 cover?
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron micro…
Who is the assignee on this patent?
Hitachi High-Tech Science Corp
What technology area does this patent fall under?
Primary CPC classification H01J1/3044. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).