Deposition apparatus and methods to reduce deposition asymmetry

Patent metadata

Field	Value
Publication number	US-9580796-B2
Application number	US-201113173197-A
Country	US
Kind code	B2
Filing date	Jun 30, 2011
Priority date	Jul 2, 2010
Publication date	Feb 28, 2017
Grant date	Feb 28, 2017

Abstract

One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.

First claim

What is claimed is:

1. A deposition apparatus bounded by a grounded side wall and a grounded top wall, the apparatus comprising:
a processing chamber bounded by the grounded side wall, the processing chamber having a ceiling and a floor, the processing chamber having a processing region defined by a pedestal and a cylindrical skirt;
a plasma source assembly above the ceiling between the ceiling and the grounded top wall of the processing chamber, the plasma source assembly comprising a conductive hollow cylinder and at least one power source outside of and connected to the conductive hollow cylinder; and
a substantially continuous grounded shield outside the processing chamber and around the conductive hollow cylinder and in contact with one or more of the grounded side wall or the grounded top wall of the deposition apparatus, the substantially continuous grounded shield substantially conforming in shape with the conductive hollow cylinder so that a space between the conductive hollow cylinder and the grounded shield is substantially uniform,
wherein the power source is connected to the conductive hollow cylinder through a connection rod which does not pass through the continuous grounded shield.

2. The apparatus of claim 1 , wherein the at least one power source is connected to the conductive hollow cylinder through an opening in the grounded top wall and connects to the conductive hollow cylinder off axis.

3. The apparatus of claim 1 , wherein the continuous grounded shield is integrally formed with the grounded side wall and grounded top wall.

4. The apparatus of claim 1 , wherein the at least one power source comprises an RF power source and a DC power source connected to opposite sides of the conductive hollow cylinder.

5. The apparatus of claim 1 , wherein the continuous grounded shield is made from a material selected from the group consisting of non-magnetic conductors, aluminum, copper, nickel plated materials, silver plated materials and combinations thereof.

6. The apparatus of claim 1 , wherein the space is filled with a dielectric material.

7. The apparatus of claim 1 , further comprising a process gas source connected to a gas distribution ring in the chamber through a mass flow controller.

Assignees

• Ritchie Alan
• Cox Michael S
• Applied Materials Inc

Inventors

• Ritchie Alan
• Cox Michael S

Classifications

• H10P72/0451

  Apparatus for manufacturing or treating in a plurality of work-stations · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H01J37/32651 Primary

  Shields, e.g. dark space shields, Faraday shields · CPC title

• H01J37/3455

  Movable magnets · CPC title

• C23C16/517

  using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515 · CPC title