Plasma activated conformal dielectric film deposition

Patent metadata

Field	Value
Publication number	US-9570274-B2
Application number	US-201514607997-A
Country	US
Kind code	B2
Filing date	Jan 28, 2015
Priority date	Apr 15, 2010
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

First claim

The invention claimed is:

1. A method of depositing a film on a non-planar substrate surface in a reaction chamber, the method comprising:
introducing a first reactant into the reaction chamber under non-plasma conditions allowing the first reactant to adsorb onto the non-planar substrate surface;
introducing a dopant containing material into the reaction chamber under non-plasma conditions; and
subsequently exposing the non-planar substrate surface to plasma to form a doped film conformal to the non-planar substrate surface.

2. The method of claim 1 , wherein the first reactant is a silicon-containing reactant.

3. The method of claim 1 , wherein the dopant is selected from the group consisting of boron, phosphorous, arsenic, and gallium.

4. The method of claim 1 , further comprising, prior to exposing the non-planar substrate surface to plasma, introducing a second reactant into the reaction chamber.

5. The method of claim 4 , wherein the second reactant is an oxidant.

6. The method of claim 4 , wherein the second reactant is an nitrogen-containing reactant.

7. The method of claim 1 , wherein the doped film is a doped silicon oxide film.

8. The method of claim 1 , wherein the doped film is a doped silicon nitride film.

9. The method of claim 1 , wherein the doped film is a doped silicon carbide film.

10. The method of claim 1 , further comprising introducing a second reactant into the reaction chamber while the first reactant is adsorbed onto the non-planar substrate surface.

11. The method of claim 10 , further comprising exposing the non-planar substrate surface to plasma to drive a reaction between the first and second reactants on the substrate surface to form a portion of the film.

Assignees

• Novellus Systems Inc

Inventors

• Swaminathan Shankar
• Henri Jon
• Hausmann Dennis
• Subramonium Pramod
• Sriram Mandyam
• Rangarajan Vishwanathan
• Kattige Kirthi
• Van Schravendijk Bart
• Mckerrow Andrew J

Classifications

• H10W20/0265

  characterised by the sidewall insulation · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title