Micromechanical semiconductor sensing device

Patent metadata

Field	Value
Publication number	US-9567211-B2
Application number	US-201514687835-A
Country	US
Kind code	B2
Filing date	Apr 15, 2015
Priority date	Dec 19, 2011
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

First claim

What is claimed is:

1. A micromechanical semiconductor sensing device comprising:
a micromechanical sensing structure including a first piezoresistive sensing device responsive to an external force on the micromechanical semiconductor sensing device, the micromechanical sensing structure configured to output an electrical sensing signal responsive to the external force; and
a second piezoresistive sensing device embedded in the micromechanical sensing structure, the second piezoresistive sensing device configured to sense a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device, and configured to output an electrical disturbance signal responsive to the sensed mechanical stress.

2. The micromechanical semiconductor sensing device according to claim 1 , further comprising a compensation logic configured to compensate, based on the electrical disturbance signal, a disturbance in the electrical sensing signal caused by the mechanical stress.

3. The micromechanical semiconductor sensing device according to claim 1 , wherein the micromechanical sensing structure comprises a capacitive pressure sensor, and wherein the first piezoresistive sensing device comprises a movable diaphragm above a hollow space.

4. The micromechanical semiconductor sensing device according to claim 1 , wherein the micromechanical sensing structure comprises an acceleration sensing device, wherein the first piezoresistive sensing device comprises an inertial element inside a cavity, and wherein the cavity is supported by a support structure.

5. A method for manufacturing a micromechanical semiconductor sensing device, the method comprising:
structuring a micromechanical sensing structure to include a first piezoresistive sensing device responsive to an external force on the micromechanical semiconductor sensing device, the micromechanical sensing structure outputting an electrical sensing signal responsive to the external force; and
embedding at least one second piezoresistive sensing device in the micromechanical sensing structure for sensing a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device, and for outputting an electrical disturbance signal responsive to the sensed mechanical stress.

6. The method according to claim 5 , wherein the micromechanical sensing structure is structured as a capacitive pressure sensor, and wherein the first piezoresistive sensing device comprises a movable diaphragm above a hollow space.

7. The method according to claim 5 , wherein the micromechanical sensing structure is structured as an acceleration sensing device, wherein the first piezoresistive sensing device comprises an inertial element inside a cavity, and wherein the cavity is supported by a support structure.

Assignees

• Infineon Technologies Ag

Inventors

• Kalz Franz-Peter
• Theuss Horst
• Winkler Bernhard
• Hosseini Khalil
• Mahler Joachim
• Mengel Manfred

Classifications

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• G01L19/02

  Arrangements for preventing, or for compensating for, effects of inclination or acceleration of the measuring device; Zero-setting means (for aneroid barometers G01L7/14) · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• B81B7/02 Primary

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title