Composition for tungsten CMP

Patent metadata

Field	Value
Publication number	US-9566686-B2
Application number	US-201514965168-A
Country	US
Kind code	B2
Filing date	Dec 10, 2015
Priority date	Mar 11, 2014
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

First claim

The invention claimed is:

1. A method of chemical mechanical polishing a substrate including a tungsten layer, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a water based liquid carrier;
(ii) a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV;
(iii) an amine compound in solution in the liquid carrier, wherein the amine compound comprises an alkyl group having 12 or more carbon atoms; and
(iv) an iron containing accelerator

(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

2. The method of claim 1 , wherein the colloidal silica has a permanent positive charge of at least 15 mV.

3. The method of claim 1 , wherein the colloidal silica is treated with an aminosilane compound selected from the group consisting of bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane), 3-(N-styrylmethyl-2-aminoethylaminopropyl trialkoxysilane, aminopropyl trialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane), trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trialkoxysilylpropyl)amine, and mixtures thereof.

4. The method of claim 1 , wherein the iron containing accelerator comprises a soluble iron containing catalyst and the polishing composition further comprises a stabilizer bound to the soluble iron containing catalyst, the stabilizer being selected from the group consisting of phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid, malonic acid, aspartic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, glutaconic acid, muconic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, and mixtures thereof.

5. The method of claim 1 , wherein the amine compound is selected from the group consisting of dodecylamine, tetradecylamine, hexadecylamine, oxtadecylamine, oleylamine, N-methyldioctylamine, N-methyloctadecylamine, cocamidopropylamine oxide, benzyldimethylhexadecylammonium chloride, benzalkonium chloride, and cocoalkylmethyl[polyoxyethylene (15)] ammonium chloride, and octadecylmethyl[polyoxyethylene (15)] ammonium chloride, N,N′-methylenebis (dimethyltetradecylammonium bromide), N,N,N′,N′,N′-pentamethyl-N-tallow-1,3-propane-diammonium dichloride, didodecyl-tetramethyl-1,4-butanediaminium diiodide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.

6. A method of chemical mechanical polishing a substrate including a tungsten laver, the method comprising:
(a) contacting the substrate with a polishing composition comprising:
(i) a water based liquid carrier;
(ii) a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV;
(iii) an amine compound in solution in the liquid carrier, wherein the amine compound is a diquaternary amine compound; and
(iv) an iron containing accelerator

(b) moving the polishing composition relative to the substrate; and
(c) abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

7. The method of claim 6 , wherein the diquaternary amine compound is selected from the group consisting of N,N′-methylenebis(dimethyltetradecylammonium bromide), 1,1,4,4-tetrabutylpiperazinediium dibromide, N,N,N′,N′,N′-pentamethyl -N-tallow-1,3-propane-diammonium dichloride, N,N′-hexamethylenebis(tributylammonium hydroxide), didodecyl-tetramethyl-1,4-butanediaminium diiodide, 1,5-dimethyl-1,5-diazoniabicyclo(3.2.2)nonane dibromide, and N(1),N(6)-didodecyl-N(1),N(1),N(6),N(6)-tetramethyl-1,6-hexanediaminium diiodide, and mixtures thereof.

8. The method of claim 6 , wherein the diquaternary amine compound comprises an alkyl group having 10 or more carbon atoms.

Assignees

• Cabot Microelectronics Corp

Inventors

• Grumbine Steven
• Dysard Jeffrey
• Fu Lin
• Ward William
• Whitener Glenn

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title