Integrated time dependent dielectric breakdown reliability testing

US9557369B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9557369-B2
Application numberUS-201213530782-A
CountryUS
Kind codeB2
Filing dateJun 22, 2012
Priority dateJun 22, 2012
Publication dateJan 31, 2017
Grant dateJan 31, 2017

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Methods for reliability testing include applying a stress voltage to a device under test (DUT); measuring a leakage current across the DUT; triggering measurement of optical emissions from the DUT based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for reliability testing, comprising: applying a stress to a device under test (DUT); measuring an electrical characteristic of the DUT; triggering measurement of an optical characteristic of the DUT based on a timing of the measurement of the electrical characteristic; and correlating the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions. 2. The method of claim 1 , wherein correlating includes convolving a vector formed from leakage current measurements with a vector formed from optical emission measurements. 3. The method of claim 2 , wherein correlating includes calculating the maximum value of the convolution as Corr = max ( ∑ j ⁢ E ⁡ ( j ) ⁢ I ⁡ ( k + 1 - j ) ) , where k=1, . . . , m+n−1, m is the number of electrical measurements, n is a number of optical measurements, E is the optical measurement vector, and I is the electrical measurement vector. 4. The method of claim 1 , wherein the electrical measurement is repeated periodically. 5. The method of claim 1 , further comprising halting said stress, electrical measurement, and optical measurement, based on said correlating. 6. The method of claim 1 , wherein correlating further comprises segmenting an image of the DUT and determining a maximum emission intensity for each segment to localize emissions. 7. A method for reliability testing, comprising: applying a stress voltage to a device under test (DUT); periodically measuring a leakage current across the DUT to form an electrical measurement vector; triggering measurement of optical emissions from the DUT based on the timing of the measurement of leakage current, and correlating the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by: segmenting an image of the DUT and determining a maximum emission intensity for each segment to localize emissions and form an optical emission measurement vector; convolving the electrical measurement vector with the optical measurement vector to form a convolved vector; and determining the maximum value in the convolved vector.

Assignees

Inventors

Classifications

  • related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads · CPC title

  • Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection · CPC title

  • Environmental, reliability or burn-in testing · CPC title

  • of integrated circuits {(G01R31/31728 takes precedence)} · CPC title

  • Specific types of tests or tests for a specific type of fault, e.g. thermal mapping, shorts testing (G01R31/2818 takes precedence) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9557369B2 cover?
Methods for reliability testing include applying a stress voltage to a device under test (DUT); measuring a leakage current across the DUT; triggering measurement of optical emissions from the DUT based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defe…
Who is the assignee on this patent?
Chen Jifeng, Pfeiffer Dirk, Shaw Thomas M, and 3 more
What technology area does this patent fall under?
Primary CPC classification G01R31/2879. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 31 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).