Stress buffer layer for integrated microelectromechanical systems (MEMS)

Patent metadata

Field	Value
Publication number	US-9550670-B2
Application number	US-201514731211-A
Country	US
Kind code	B2
Filing date	Jun 4, 2015
Priority date	Sep 27, 2013
Publication date	Jan 24, 2017
Grant date	Jan 24, 2017

Abstract

Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.

First claim

What is claimed is:

1. A method of fabricating a semiconductor package, the method comprising:
placing a MEMS component on a carrier substrate;
forming a buffer layer over the MEMS component and the carrier substrate, the buffer layer having a first Young's modulus;
forming a mold compound over the buffer layer and the carrier substrate, the mold compound having a second Young's modulus higher than the first Young's modulus; and
transferring the MEMS component, the buffer layer, and the mold compound from the carrier substrate to a substrate comprising an array of external conductive contacts, the transferring comprising removing the MEMS component, the buffer layer, and the mold compound from the carrier substrate.

2. The method of claim 1 , wherein forming the buffer layer comprises forming a material selected from the group consisting of a polyimide, an epoxy, an epoxy blend and a silicone.

3. The method of claim 1 , wherein forming the buffer layer comprises forming the buffer layer directly on the MEMS component.

4. The method of claim 1 , wherein transferring the MEMS component, the buffer layer, and the mold compound from the carrier substrate to the substrate comprising the array of external conductive contacts comprises transferring to a ball grid array (BGA) substrate.

5. The method of claim 1 , wherein the first Young's modulus is approximately 5 GPa or less, and the second Young's modulus is approximately 25 GPa.

6. A method of fabricating a semiconductor package, the method comprising:
forming a buffer layer over a MEMS component, the buffer layer having a first Young's modulus;
placing the MEMS component having the buffer layer on a carrier substrate;
forming a mold compound over the buffer layer and the carrier substrate, the mold compound having a second Young's modulus higher than the first Young's modulus; and
transferring the MEMS component, the buffer layer, and the mold compound to a substrate comprising an array of external conductive contacts, the transferring comprising removing the MEMS component, the buffer layer, and the mold compound from the carrier substrate.

7. The method of claim 6 , wherein forming the buffer layer comprises forming a material selected from the group consisting of a polyimide, an epoxy, an epoxy blend and a silicone.

8. The method of claim 6 , wherein forming the buffer layer comprises forming the buffer layer directly on the MEMS component.

9. The method of claim 6 , wherein transferring the MEMS component, the buffer layer, and the mold compound from the carrier substrate to the substrate comprising the array of external conductive contacts comprises transferring to a ball grid array (BGA) substrate.

10. The method of claim 6 , wherein the first Young's modulus is approximately 5 GPa or less, and the second Young's modulus is approximately 25 GPa.

11. The method of claim 6 , wherein the buffer layer comprises a first material layer and a second material layer different from the first material layer, and wherein the first material layer of the buffer layer buffers mechanical stress while the second material layer of the buffer layer provides electrical shielding.

12. A method of fabricating a semiconductor package, the method comprising:
placing a MEMS component on a carrier substrate;
forming a buffer layer over the MEMS component and the carrier substrate, the buffer layer having a first Young's modulus, wherein the buffer layer comprises a first material layer and a second material layer different from the first material layer, and wherein the first material layer of the buffer layer buffers mechanical stress while the second material layer of the buffer layer provides electrical shielding;
forming a mold compound over the buffer layer and the carrier substrate, the mold compound having a second Young's modulus higher than the first Young's modulus; and
transferring the MEMS component, the buffer layer, and the mold compound from the carrier substrate to a substrate comprising an array of external conductive contacts.

13. The method of claim 12 , wherein forming the buffer layer comprises forming a material selected from the group consisting of a polyimide, an epoxy, an epoxy blend and a silicone.

14. The method of claim 12 , wherein forming the buffer layer comprises forming the buffer layer directly on the MEMS component.

15. The method of claim 12 , wherein transferring the MEMS component, the buffer layer, and the mold compound from the carrier substrate to the substrate comprising the array of external conductive contacts comprises transferring to a ball grid array (BGA) substrate.

16. The method of claim 12 , wherein the first Young's modulus is approximately 5 GPa or less, and the second Young's modulus is approximately 25 GPa.

17. A method of fabricating a semiconductor package, the method comprising:
forming a buffer layer over a MEMS component, the buffer layer having a first Young's modulus, wherein the buffer layer comprises a first material layer and a second material layer different from the first material layer, and wherein the first material layer of the buffer layer buffers mechanical stress while the second material layer of the buffer layer provides electrical shielding;
placing the MEMS component having the buffer layer on a carrier substrate;
forming a mold compound over the buffer layer and the carrier substrate, the mold compound having a second Young's modulus higher than the first Young's modulus; and
transferring the MEMS component, the buffer layer, and the mold compound to a substrate comprising an array of external conductive contacts.

18. The method of claim 17 , wherein forming the buffer layer comprises forming a material selected from the group consisting of a polyimide, an epoxy, an epoxy blend and a silicone.

19. The method of claim 17 , wherein forming the buffer layer comprises forming the buffer layer directly on the MEMS component.

20. The method of claim 17 , wherein transferring the MEMS component, the buffer layer, and the mold compound from the carrier substrate to the substrate comprising the array of external conductive contacts comprises transferring to a ball grid array (BGA) substrate.

21. The method of claim 17 , wherein the first Young's modulus is approximately 5 GPa or less, and the second Young's modulus is approximately 25 GPa.

22. The method of claim 1 , wherein the buffer layer comprises a first material layer and a second material layer different from the first material layer, and wherein the first material layer of the buffer layer buffers mechanical stress while the second material layer of the buffer layer provides electrical shielding.

Assignees

• Intel Ip Corp

Inventors

• Geissler Christian
• Meyer Thorsten
• Ofner Gerald
• Mahnkopf Reinhard
• Augustin Andreas
• Mueller Christian

Classifications

• H10W90/752

  between stacked chips · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W90/10

  Configurations of laterally-adjacent chips · CPC title

• H10W74/121

  by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title