Power amplification module

Patent metadata

Field	Value
Publication number	US-9548711-B1
Application number	US-201615184035-A
Country	US
Kind code	B1
Filing date	Jun 16, 2016
Priority date	Jul 15, 2015
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

First claim

What is claimed is:

1. A power amplification module comprising:
a first bipolar transistor, wherein when a radio frequency signal is input to a base of the first bipolar transistor, the first bipolar transistor outputs from a collector of the first bipolar transistor an amplified signal obtained by amplifying the radio frequency signal;
a second bipolar transistor that is thermally coupled with the first bipolar transistor, wherein when the radio frequency signal is input to a base of the second bipolar transistor, the second bipolar transistor imitates operation of the first bipolar transistor;
a third bipolar transistor, wherein when a power supply voltage is supplied to a collector of the third bipolar transistor and a first control voltage is supplied to a base of the third bipolar transistor, the third bipolar transistor outputs a first bias current from an emitter of the third bipolar transistor to the base of the first bipolar transistor and the base of the second bipolar transistor;
a first resistor, wherein when a second control voltage is supplied to a first terminal of the first resistor and a second terminal of the first resistor is connected to a collector of the second bipolar transistor, the first resistor generates a third control voltage at the second terminal of the first resistor, the third control voltage corresponding to a collector current of the second bipolar transistor; and
a fourth bipolar transistor, wherein when the power supply voltage is supplied to a collector of the fourth bipolar transistor and the third control voltage is supplied to a base of the fourth bipolar transistor, the fourth bipolar transistor outputs a second bias current from an emitter of the fourth bipolar transistor to the base of the first bipolar transistor and the base of the second bipolar transistor.

2. The power amplification module according to claim 1 ,
wherein an emitter area of the second bipolar transistor is smaller than an emitter area of the first bipolar transistor.

3. The power amplification module according to claim 1 , further comprising:
a second resistor, wherein a first terminal of the second resistor is connected to the emitter of the third bipolar transistor and the emitter of the fourth bipolar transistor, and a second terminal of the second resistor is connected to the base of the first bipolar transistor; and
a third resistor, wherein a first terminal of the third resistor is connected to the emitter of the third bipolar transistor and the emitter of the fourth bipolar transistor, and a second terminal of the third resistor is connected to the base of the second bipolar transistor;
wherein the radio frequency signal is supplied to a point between the second terminal of the second resistor and the base of the first bipolar transistor and to a point between the second terminal of the third resistor and the base of the second bipolar transistor.

4. The power amplification module according to claim 1 , further comprising:
a fourth resistor, wherein a first terminal of the fourth resistor is connected to the emitter of the third bipolar transistor and the emitter of the fourth bipolar transistor and a second terminal of the fourth resistor is connected to the base of the first bipolar transistor and the base of the second bipolar transistor;
wherein the radio frequency signal is supplied to a point between the second terminal of the fourth resistor and the base of the first bipolar transistor and the base of the second bipolar transistor.

5. The power amplification module according to claim 4 , further comprising:
a first capacitor, wherein the radio frequency signal is input to the base of the first bipolar transistor and the base of the second bipolar transistor via the first capacitor.

6. The power amplification module according to claim 1 , further comprising:
a fifth resistor;
a fifth bipolar transistor; and
a sixth bipolar transistor;
wherein a fourth control voltage is supplied to a first terminal of the fifth resistor and a second terminal of the fifth resistor is connected to a collector of the fifth bipolar transistor,
a base and the collector of the fifth bipolar transistor are connected to each other and an emitter of the fifth bipolar transistor is connected to a collector of the sixth bipolar transistor,
a base and the collector of the sixth bipolar transistor are connected to each other and an emitter of the sixth bipolar transistor is grounded,
the first bipolar transistor and the sixth bipolar transistor are thermally coupled with each other, and
the first control voltage is output from the base of the fifth bipolar transistor.

7. The power amplification module according to claim 6 , further comprising:
a seventh bipolar transistor, wherein a collector of the seventh bipolar transistor is connected to the emitter of the third bipolar transistor and the emitter of the fourth bipolar transistor, a base of the seventh bipolar transistor is connected to the base of the sixth bipolar transistor, and an emitter of the seventh bipolar transistor is grounded.

8. The power amplification module according to claim 7 , further comprising:
a sixth resistor that is provided between the base of the sixth bipolar transistor and the base of the seventh bipolar transistor.

9. The power amplification module according to claim 7 ,
wherein the first bipolar transistor and the seventh bipolar transistor are thermally coupled with each other.

10. The power amplification module according to claim 5 , further comprising:
a fifth resistor;
a fifth bipolar transistor; and
a sixth bipolar transistor;
wherein a fourth control voltage is supplied to a first terminal of the fifth resistor and a second terminal of the fifth resistor is connected to a collector of the fifth bipolar transistor,
a base and the collector of the fifth bipolar transistor are connected to each other and an emitter of the fifth bipolar transistor is connected to a collector of the sixth bipolar transistor,
a base and the collector of the sixth bipolar transistor are connected to each other and an emitter of the sixth bipolar transistor is grounded,
the first bipolar transistor and the sixth bipolar transistor are thermally coupled with each other, and
the first control voltage is output from the base of the fifth bipolar transistor.

11. A power amplification module comprising:
a first bipolar transistor, wherein when a radio frequency signal is input to a base of the first bipolar transistor, the first bipolar transistor outputs from a collector of the first bipolar transistor an amplified signal obtained by amplifying the radio frequency signal;
a second bipolar transistor that is thermally coupled with the first bipolar transistor, wherein when the radio frequency signal is input to a base of the second bipolar transistor, the second bipolar transistor imitates operation of the first bipolar transistor;
a first field effect transistor, wherein when a power supply voltage is supplied to a drain of the first field effect transistor and a first control voltage is supplied to a gate of the first field effect transistor, the first field effect transistor outputs a first bias current from a source of the first field effect transistor to the base of the first bipolar transistor and the base of the second bipolar transistor;
a first resistor, wherein when a second control voltage is supplied to a first terminal of the first resistor and a second terminal of the first resistor is connected to a collector of the second bipolar transistor, the first resistor generates a third control voltage at the second terminal of the first resistor, the third control voltage corresponding to a

Assignees

• Murata Manufacturing Co

Inventors

• Hase Masatoshi

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H03F3/21

  with semiconductor devices only {(H03F3/245 takes precedence)} · CPC title

• H03F1/302 Primary

  in bipolar transistor amplifiers (H03F1/303, H03F1/305, H03F1/307 take precedence) · CPC title

• H04W88/02

  Terminal devices · CPC title

• H03F3/245

  with semiconductor devices only · CPC title