Power amplifier (PA) system with electrothermal feedback circuitry for PA gain correction

Patent metadata

Field	Value
Publication number	US-9362879-B2
Application number	US-201414484377-A
Country	US
Kind code	B2
Filing date	Sep 12, 2014
Priority date	Sep 17, 2013
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A power amplifier (PA) system with PA gain correction is disclosed. The PA system includes a PA having a bias voltage input; and electrothermal feedback circuitry coupled to the bias voltage input. The electrothermal feedback circuitry is configured to receive thermal feedback generated by the PA and maintain a substantially constant PA gain by automatically changing a bias voltage level at the bias voltage input based upon the thermal feedback.

First claim

What is claimed is:

1. A power amplifier (PA) system with PA gain correction comprising:
a PA having a bias voltage input; and
electrothermal feedback circuitry comprising:
a first transistor that is thermally decoupled from the PA and physically coupled to a metallization directly coupled to the first transistor; and
a second transistor that is thermally coupled to the PA to receive thermal feedback of heat generated by the PA, wherein the electrothermal feedback circuitry is coupled to the bias voltage input and configured to maintain substantially a constant PA gain by automatically changing a bias voltage level at the bias voltage input based upon the thermal feedback.

2. The PA system of claim 1 wherein:
the first transistor is a reference device and the second transistor is a sensor device that are together configured to provide a negative electrothermal loop gain.

3. The PA system of claim 2 wherein the sensor device and the reference device are configured to convert a temperature difference between the sensor device and the reference device into an electrical current that modifies the bias voltage level such that PA gain is substantially maintained at a fixed level during a data burst.

4. The PA system of claim 2 wherein the PA is comprised of PA cells that are fabricated on a die and the reference device is located on the die at least 50 μm from any of the PA cells.

5. The PA system of claim 4 wherein the sensor device is located on the die within at least 25 μm of one of the PA cells.

6. The PA system of claim 2 wherein the reference device is physically coupled to a metallized via.

7. The PA system of claim 1 wherein:
the first transistor is a sensor device and the second transistor is a reference device that are together configured to provide a positive electrothermal loop gain.

8. The PA system of claim 7 wherein the sensor device and the reference device are configured to convert a temperature difference between the sensor device and the reference device into an electrical current that modifies the bias voltage level such that PA gain is substantially maintained at a fixed level during a data burst.

9. The PA system of claim 7 wherein the PA is comprised of PA cells that are fabricated on a die and the sensor device is located on the die at least 50 μm from any of the PA cells.

10. The PA system of claim 7 wherein the reference device is located on the die within at least 25 μm of one of the PA cells.

11. The PA system of claim 7 wherein the sensor device is physically coupled to a metallized via.

12. The PA system of claim 1 further including a PA bias circuit having a bias output communicatively coupled to the bias voltage input of the PA, wherein the PA bias circuit is configured to generate a bias voltage level that is automatically modifiable by the electrothermal feedback circuitry to substantially maintain a constant PA gain based upon thermal feedback of the heat generated by the PA.

13. A method of maintaining constant PA gain:
providing a PA having a bias voltage input;
providing electrothermal feedback circuitry comprising:
a first transistor that is thermally decoupled from the PA and physically coupled to a metallization directly coupled to the first transistor; and
a second transistor that is thermally coupled to the PA to receive thermal feedback of heat generated by the PA, wherein the electrothermal feedback circuitry is coupled to the bias voltage input;

receiving the thermal feedback from the PA via the electrothermal feedback circuitry;
converting a thermal signal into an electrical current signal via the electrothermal feedback circuitry; and
generating a bias voltage level at the bias voltage input that substantially maintains a constant PA gain.

14. The method of maintaining constant PA gain of claim 13 wherein the first transistor is a reference device and the second transistor is a sensor device that are together configured to provide a negative electrothermal loop gain.

15. The method of maintaining constant PA gain of claim 14 wherein the PA is comprised of PA cells that are fabricated on a die and the reference device is located on the die at least 50 μm from any of the PA cells.

16. The method of maintaining constant PA gain of claim 15 wherein the sensor device is located on the die within at least 25 μm of one of the PA cells.

17. The method of maintaining constant PA gain of claim 14 wherein the reference device is physically coupled to a metallized via.

18. The method of maintaining constant PA gain of claim 13 wherein the first transistor is a sensor device and the second transistor is a reference device that are together configured to provide a positive electrothermal loop gain.

19. The method of maintaining constant PA gain of claim 18 wherein the PA is comprised of PA cells that are fabricated on a die and the sensor device is located on the die at least 50 μm from any of the PA cells.

20. The method of maintaining constant PA gain of claim 19 wherein the reference device is located on the die within at least 25 μm of one of the PA cells.

Assignees

• Rf Micro Devices Inc

Inventors

• Ding Miaofu
• Baeten Robert J

Classifications

• H03F3/245

  with semiconductor devices only · CPC title

• H03G3/3042

  in modulators, frequency-changers, transmitters or power amplifiers · CPC title

• H03F1/302 Primary

  in bipolar transistor amplifiers (H03F1/303, H03F1/305, H03F1/307 take precedence) · CPC title

• H03G3/30 Primary

  in amplifiers having semiconductor devices · CPC title

• H03F2200/447

  the amplifier being protected to temperature influence · CPC title