Radio frequency amplifying circuit and power amplifying module

Patent metadata

Field	Value
Publication number	US-9407207-B2
Application number	US-201414205407-A
Country	US
Kind code	B2
Filing date	Mar 12, 2014
Priority date	Mar 19, 2013
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

An radio frequency amplifying circuit includes an amplifying transistor configured to amplify a radio frequency signal input to a base of the amplifying transistor via a matching network to output the amplified radio frequency signal, a first bias transistor connected to the amplifying transistor based on a current-mirror connection to supply a bias to the amplifying transistor, and a second bias transistor connected to the base of the amplifying transistor based on an emitter-follower connection to supply a bias to the amplifying transistor.

First claim

What is claimed is:

1. A radio frequency amplifying circuit comprising:
an amplifying transistor configured to amplify a radio frequency signal input to a base of the amplifying transistor via a matching network to output an amplified radio frequency signal;
a first bias transistor connected to the amplifying transistor based on a current-mirror connection to supply a bias to the amplifying transistor;
a second bias transistor connected to the base of the amplifying transistor based on an emitter-follower connection to supply a bias to the amplifying transistor;
a second amplifying transistor configured to amplify a radio frequency signal input, by the amplifying transistor, to a base of the second amplifying transistor via a matching network;
a third bias transistor connected to the second amplifying transistor based on a current-mirror connection to supply a bias to the second amplifying transistor;
a fourth bias transistor connected to a base of the second amplifying transistor based on an emitter-follower connection to supply a bias to the second amplifying transistor; and
an input terminal for a first control voltage applied to collector sides of the first and third bias transistors and an input terminal for a second control voltage applied to base sides of the second and fourth bias transistors are independent and separate from each other.

2. The radio frequency amplifying circuit according to claim 1 , further comprising a voltage adjusting circuit configured to adjust the voltage applied to the base of the second bias transistor according to a temperature property of the second bias transistor.

3. The radio frequency amplifying circuit according to claim 2 , wherein the voltage adjusting circuit includes a voltage adjusting transistor having a temperature property of a base-emitter voltage that is equivalent to a temperature property of a base-emitter voltage of the second bias transistor, and is configured to supply a voltage in accordance with the base-emitter voltage of the voltage adjusting transistor to the base of the second bias transistor.

4. The radio frequency amplifying circuit according to claim 1 , further comprising a capacitor connected to a base of the first bias transistor at one end of the capacitor and grounded at another end of the capacitor.

5. The radio frequency amplifying circuit according to claim 1 , further comprising a voltage adjusting circuit configured to adjust the voltage applied to the bases of the second and fourth bias transistors according to temperature properties of the transistors.

6. The radio frequency amplifying circuit according to claim 1 , further comprising:
a first capacitor connected to a base of the first bias transistor at one end of the first capacitor and grounded at another end of the first capacitor; and
a second capacitor connected to a base of the third bias transistor at one end of the second capacitor and grounded at another end of the second capacitor.

7. The radio frequency amplifying circuit according to claim 1 , wherein at least one of the amplifying transistor, the first bias transistor, and the second bias transistor is a heterojunction bipolar transistor.

8. A power amplifying module comprising:
the radio frequency amplifying circuit according to claim 1 ; and
a control voltage generating circuit configured to generate a control voltage supplied to the radio frequency amplifying circuit.

9. A radio frequency amplifying circuit comprising:
an amplifying transistor configured to amplify a radio frequency signal input to a base of the amplifying transistor via a matching network to output an amplified radio frequency signal;
a first bias transistor connected to the amplifying transistor based on a current-mirror connection to supply a bias to the amplifying transistor;
a second bias transistor connected to the base of the amplifying transistor based on an emitter-follower connection to supply a bias to the amplifying transistor;
a second amplifying transistor configured to amplify a radio frequency signal input, by the amplifying transistor, to a base of the second amplifying transistor via a matching network;
a third bias transistor connected to the second amplifying transistor based on a current-mirror connection to supply a bias to the second amplifying transistor;
a fourth bias transistor connected to a base of the second amplifying transistor based on an emitter-follower connection to supply a bias to the second amplifying transistor; and
an input terminal for a first control voltage applied to collector sides of the first and third bias transistors and an input terminal for a second control voltage applied to base sides of the second and fourth bias transistors are defined by a common terminal.

10. The radio frequency amplifying circuit according to claim 9 , further comprising a voltage adjusting circuit configured to adjust the voltage applied to the base of the second bias transistor according to a temperature property of the second bias transistor.

11. The radio frequency amplifying circuit according to claim 10 , wherein the voltage adjusting circuit includes a voltage adjusting transistor having a temperature property of a base-emitter voltage that is equivalent to a temperature property of a base-emitter voltage of the second bias transistor, and is configured to supply a voltage in accordance with the base-emitter voltage of the voltage adjusting transistor to the base of the second bias transistor.

12. The radio frequency amplifying circuit according to claim 9 , further comprising a capacitor connected to a base of the first bias transistor at one end of the capacitor and grounded at another end of the capacitor.

13. The radio frequency amplifying circuit according to claim 9 , further comprising a voltage adjusting circuit configured to adjust the voltage applied to the bases of the second and fourth bias transistors according to temperature properties of the transistors.

14. The radio frequency amplifying circuit according to claim 9 , further comprising:
a first capacitor connected to a base of the first bias transistor at one end of the first capacitor and grounded at another end of the first capacitor; and
a second capacitor connected to a base of the third bias transistor at one end of the second capacitor and grounded at another end of the second capacitor.

15. The radio frequency amplifying circuit according to claim 9 , wherein at least one of the amplifying transistor, the first bias transistor, and the second bias transistor is a heterojunction bipolar transistor.

16. A power amplifying module comprising:
the radio frequency amplifying circuit according to claim 9 ; and
a control voltage generating circuit configured to generate a control voltage supplied to the radio frequency amplifying circuit.

Assignees

• Murata Manufacturing Co

Inventors

• Tsutsui Takayuki
• Tanaka Satoshi
• Shimamoto Kenichi

Classifications

• H03F2200/222

  A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier · CPC title

• H03F3/245

  with semiconductor devices only · CPC title

• H03F2200/108

  A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes · CPC title

• H03F2200/318

  A matching circuit being used as coupling element between two amplifying stages · CPC title

• H03F2200/447

  the amplifier being protected to temperature influence · CPC title