Transistor device with integrated gate-resistor

Patent metadata

Field	Value
Publication number	US-9548370-B2
Application number	US-201514692235-A
Country	US
Kind code	B2
Filing date	Apr 21, 2015
Priority date	Jul 25, 2013
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

A transistor device includes an individual transistor cell arranged in a transistor cell field on a semiconductor body, the individual transistor cell having a gate electrode. The transistor device further includes a gate contact, electrically coupled to the gate electrode and configured to switch on the individual transistor cell by providing a gate current in a first direction and configured to switch off the individual transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction. The transistor device also includes a gate-resistor structure monolithically integrated in the transistor device. The gate-resistor structure provides a first resistance for the gate current when the gate current flows in the first direction, and provides a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction.

First claim

What is claimed is:

1. A gate-resistor structure on a semiconductor body, the gate-resistor structure comprising:
a connecting layer being disposed outside of the semiconductor body and comprising a connecting section, the connecting section being coupled to a plurality of transistor cells;
a first resistance section of the connecting layer, the first resistance section of a first or a second conductivity type;
a gate contact for receiving a gate signal for the transistor cells, the gate contact being coupled to the first resistance section;
a second resistance section of the connecting layer, the second resistance section electrically coupled to the gate contact;
an insulating layer insulating the first resistance section from the connecting section and the second resistance section; and
a first diode region arranged in the first resistance section to form a diode, wherein the first resistance section including the diode is coupled between a portion of the first resistance section directly adjoining the first diode region and the gate contact.

2. The gate-resistor of claim 1 , wherein the first diode region extends from a top surface of the first resistance section into the first resistance section in a vertical direction.

3. The gate-resistor of claim 1 , further comprising:
a further insulating layer arranged to insulate portions of the connecting layer that include the connecting section, the first resistance section and the second resistance section from the semiconductor body.

4. The gate-resistor of claim 3 , wherein the further insulating layer completely separates the connecting layer from the semiconductor body.

5. The gate-resistor structure of claim 1 , further comprising a first contact layer arranged to electrically connect the first resistance section to the second resistance section.

6. The gate-resistor structure of claim 1 , further comprising a second contact layer arranged to electrically connect the first diode region to the connecting section.

7. The gate-resistor of claim 1 , wherein the connecting layer is a layer of polysilicon.

Assignees

• Infineon Technologies Ag

Inventors

• Voss Stephan
• Tuerkes Peter
• Huesken Holger

Classifications

• H10D12/417 Primary

  having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region · CPC title

• H10D30/60 Primary

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title

• H01L29/435 Primary

  Electricity · mapped topic

• H01L27/0629

  Electricity · mapped topic

• H01L27/075

  Electricity · mapped topic