High density selector-based non volatile memory cell and fabrication
US-2016268341-A1 · Sep 15, 2016 · US
US9548288B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9548288-B1 |
| Application number | US-201514966482-A |
| Country | US |
| Kind code | B1 |
| Filing date | Dec 11, 2015 |
| Priority date | Dec 22, 2014 |
| Publication date | Jan 17, 2017 |
| Grant date | Jan 17, 2017 |
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A system that includes an integrated circuit die and a power supply decoupling unit is disclosed. The system includes an integrated circuit die, and interconnection region, and a decoupling unit. The integrated circuit die includes a plurality of circuits, which each include multiple devices interconnected using wires fabricated on a first plurality of conductive layers. The interconnection region includes multiple solder balls, and multiple conductive paths, each of which includes wires fabricated on a second plurality conductive layers. At least one solder ball is connected to an Input/Output terminal of a first circuit of the plurality of circuits via one of the conductive paths. The decoupling unit may include a plurality of capacitors and a plurality of terminals. Each terminal of the decoupling unit may be coupled to a respective power terminal of a second circuit of the plurality of circuits via the conductive paths.
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What is claimed is: 1. A system, comprising: an integrated circuit die including: a plurality of circuits, wherein each circuit of the plurality of circuits includes a plurality of devices interconnected by a first plurality of wires fabricated on a first plurality of conductive layers; and wherein a first circuit of the plurality of circuits includes and an Input/Output (I/O) terminal; and wherein a second circuit of the plurality of circuits includes a plurality of power terminals; an interconnection region including: a plurality of conductive paths, wherein each conductive path of the plurality of conductive paths includes a second plurality of wires fabricated on a second plurality of conductive layers; a plurality of solder balls, wherein at least one solder ball of the plurality of solder balls is coupled to the I/O terminal of the first circuit by a first conductive path of the plurality of conductive paths; at least one decoupling unit including a plurality of capacitors and a plurality of terminals, wherein each terminal of the plurality of terminals is coupled to a respective one the plurality of power terminals of the second circuit via a respective one of a subset of the plurality of conductive paths. 2. The system of claim 1 , wherein each capacitor of the plurality of capacitors comprises a trench capacitor. 3. The system of claim 1 , wherein each capacitor of the plurality of capacitors comprises a Metal Insulator Metal (MIM) capacitor. 4. The system of claim 1 , wherein a direction of current flow through a first capacitor of the plurality of capacitors is opposite of a direction of current flow through a second capacitor of the plurality of capacitors. 5. The system of claim 1 , wherein each terminal of a first subset of the plurality of power terminals is coupled to a positive power supply node included in the second circuit, and wherein each terminal of a second subset of the plurality of power terminals is coupled to a ground node included in the second circuit. 6. The system of claim 1 , wherein the at least one decoupling unit further includes an inductor. 7. The system of claim 1 , wherein the at least one decoupling unit includes at least one resistor. 8. The system of claim 7 , wherein the at least one resistor is coupled in series with at least one capacitor of the plurality of capacitors. 9. The system of claim 7 , wherein the at least one resistor is coupled in parallel with at least one capacitor of the plurality of capacitors. 10. A system, comprising: a processor; a memory interconnect to the processor by a first plurality of wires fabricated on a first plurality of conductive layers, wherein the memory includes a plurality of power terminals; an interconnection region including a plurality of conductive paths, wherein each conductive path of the plurality of conductive paths includes a second plurality of wires fabricated on a second plurality of conductive layers; and at least one decoupling unit including a plurality of capacitors and a plurality of terminals, wherein each terminal of the plurality of terminals is coupled to a respective one the plurality of power terminals of the memory via a respective one of a subset of the plurality of conductive paths. 11. The system of claim 10 , wherein at least one capacitor of the plurality of capacitors comprises a trench capacitor. 12. The system of claim 10 , wherein at least one capacitor of the plurality of capacitors comprises a Metal Insulator Metal (MIM) capacitor. 13. The system of claim 10 , wherein a direction of current flow through a first capacitor of the plurality of capacitors is opposite of a direction of current flow through a second capacitor of the plurality of capacitors. 14. The system of claim 10 , wherein each terminal of a first subset of the plurality of power terminals is coupled to a positive power supply node included in the memory, and wherein each terminal of a second subset of the plurality of power terminals is coupled to a ground node included in the memory. 15. The system of claim 10 , wherein the at least one decoupling unit includes at least one resistor. 16. The system of claim 15 , wherein the at least one resistor is coupled in series with at least one capacitor of the plurality of capacitors. 17. The system of claim 15 , wherein the at least one resistor is coupled in parallel with at least one capacitor of the plurality of capacitors.
Cutting or separating of wafers, substrates or parts of devices · CPC title
between a chip and a stacked discrete passive device, e.g. resistors, capacitors or inductors · CPC title
Dispositions, e.g. layouts · CPC title
batch processes · CPC title
Interconnections or connectors in packages · CPC title
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