Block copolymers and lithographic patterning using same

US9541830B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9541830-B2
Application numberUS-201214342657-A
CountryUS
Kind codeB2
Filing dateSep 6, 2012
Priority dateSep 6, 2011
Publication dateJan 10, 2017
Grant dateJan 10, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications.

First claim

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What is claimed is: 1. A method of forming a patterned organic thin film comprising the steps of: a) providing a substrate; b) forming a thin film of a block copolymer comprising a positive-tone polymer block and a negative-tone polymer block on the substrate, wherein the thin film has periodic microdomains; c) aligning the periodic microdomains of the thin film; d) exposing at least a portion of the thin film from b) to deep-UV or e-beam radiation to differentially affect the positive-tone polymer blocks and negative-tone polymer blocks in the exposed portion of the thin film such that an exposed pattern, and, optionally, an unexposed portion, of thin film is/are formed; and e) exposing the thin film from d) to a solvent such that the unexposed portion of block copolymer thin film, if present, and selected regions of the exposed portion of the thin film are removed, and a patterned organic thin film of the negative-tone polymer blocks or a patterned organic thin film of the positive-tone polymer blocks is formed. 2. The method of claim 1 , wherein the negative-tone block comprises at least one crosslinkable moiety, in step d) the positive-tone polymer blocks are degraded and negative-tone polymer blocks are crosslinked, and in step e) the patterned organic thin film of the negative-tone polymer blocks is formed. 3. The method of claim 1 , wherein the block copolymer further comprises one, two, or three additional blocks. 4. The method of claim 1 , wherein the block copolymer has the following structure: wherein the A block is the negative-tone block selected from polystyrene block, polyhydroxystyrene block, substituted analog thereof, and a mixture thereof and the B block is the positive-tone block and is a fluorinated block comprising at least one fluorinated monomer, and wherein x and y are each independently from 5 to 10,000. 5. The method of claim 4 , wherein the fluorinated monomer is a fluoromethacrylate monomer. 6. The method of claim 4 , wherein the A block is poly(4-hydroxystyrene), poly(p-chloro styrene), poly(p-bromostyrene), poly(p-iodostyrene), or poly(p-chloromethylstyrene). 7. The method of claim 4 , wherein the B block is a poly(fluromethacrylate) or poly(fluoromethacrylate-co-methacrylate). 8. The method of claim 4 , wherein the B block is poly(2,2,2-trifluoroethylmethacrylate) or poly(2,2,2-trifluoroethyl methacrylate-co-methyl methacrylate). 9. The method of claim 4 , wherein the A block is a styrene block or a hydroxystyrene block, wherein the fluorinated block comprises fluorinated alkyl methacrylate repeat units or a mixture of fluorinated alkyl methacrylate and alkyl methacrylate, and wherein the fluorinated alkyl methacrylate block has from 5 to 1000 fluorinated alkyl methacrylate repeat units and from 0 to 950 alkyl methacrylate repeat units. 10. The method of claim 4 , wherein the A block, B block, or both the A block and B block has one or more crosslinkable moieties. 11. A block copolymer having the following structure: wherein the A block is a polystyrene block, polyhydroxystyrene block, a substituted analog thereof, or mixture thereof and the B block is a fluorinated block comprising at least one fluorinated monomer, and wherein x and y are each independently from 5 to 1000. 12. The block copolymer of claim 11 , wherein the block copolymer further comprises one, two, or three additional blocks. 13. The block copolymer of claim 11 , wherein the fluorinated monomer is a fluoromethacrylate monomer. 14. The block copolymer of claim 11 , wherein the A block is a styrene block or a hydroxystyrene block, the fluorinated block comprises fluorinated alkyl methacrylate repeat units or a mixture of fluorinated alkyl methacrylate and alkyl methacrylate, and the fluorinated alkyl methacrylate block has from 5 to 1000 fluorinated alkyl methacrylate repeat units and from 0 to 950 alkyl methacrylate repeat units. 15. The block copolymer of claim 11 , wherein the A block is poly(4-hydroxystyrene), poly(p-chloro styrene), poly(p-bromostyrene), poly(p-iodostyrene), or poly(p-chloromethylstyrene). 16. The block copolymer of claim 11 , wherein the B block is a poly(fluromethacrylate) or poly(fluoromethacrylate-co-methacrylate). 17. The block copolymer of claim 16 , wherein the B block is poly(2,2,2-trifluoroethylmethacrylate) or poly(2,2,2-trifluoroethyl methacrylate-co-methyl methacrylate). 18. The block copolymer of claim 11 , wherein the A block, B block or both the A block and B block has one or more crosslinkable moieties. 19. The block copolymer of claim 11 , wherein the block copolymer is poly(styrene-block-2,2,2-trifluoroethylmethacrylate, poly(t-butoxystyrene-block-2,2,2-trifluoroethylmethacrylate), poly(styrene-block-2,2,2-trifluoroethylmethacrylate-co-methylmethacrylate), or poly(hydroxystyrene-block-2,2,2-trifluoroethylmethacrylate). 20. A thin film comprising the block copolymer of claim 11 .

Assignees

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Classifications

  • Monolayers, e.g. Langmuir-Blodgett · CPC title

  • Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

  • polymerising acrylic acid, methacrylic acid or derivatives thereof · CPC title

  • using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor · CPC title

  • Esters containing halogen · CPC title

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What does patent US9541830B2 cover?
Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copoly…
Who is the assignee on this patent?
Ober Christopher K, Maeda Rina, You Nam-Ho, and 2 more
What technology area does this patent fall under?
Primary CPC classification G03F7/039. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).