Apparatus for fabricating silicon carbide single crystal ingot and method for fabricating ingot

Patent metadata

Field	Value
Publication number	US-9540744-B2
Application number	US-201214128358-A
Country	US
Kind code	B2
Filing date	Jun 20, 2012
Priority date	Jun 20, 2011
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.

First claim

The invention claimed is:

1. An apparatus for fabricating a silicon carbide single crystal ingot, the apparatus comprising:
a crucible receiving a raw material;
a filter part selectively filtering a specific component of the raw material into the crucible,
wherein the filter part comprises a first filter member on the raw material and a second filter member surrounding an inner wall of the crucible, and the first filter member and the second filter member are integrally formed with each other,
wherein the second filter member is disposed on the raw material,
wherein the filter part comprises a first layer and a second layer on the first layer,
wherein the filter part is porous,
wherein a size of pores of the first layer is different from a size of pores of the second layer, and
wherein the specific component passing through the filter part comprises SiC 2 , Si 2 C, or Si.

2. The apparatus of claim 1 , wherein the filter part has a fibrous structure.

3. A method for fabricating a silicon carbide single crystal ingot, the method comprising:
preparing a crucible receiving a raw material;
preparing a filter part selectively filtering a specific component of the raw material into the crucible; and
growing an ingot from the raw material,
wherein the raw material passes through the filter part during the growing of the ingot,
wherein the filter part comprises a first filter member on the raw material and a second filter member surrounding an inner wall of the crucible, and the first filter member and the second filter member are integrally formed with each other,
wherein the second filter member is disposed on the raw material,
wherein the filter part comprises a first layer and a second layer on the first layer,
wherein the filter part is porous,
wherein a size of pores of the first layer is different from a size of pores of the second layer,
wherein the specific component passing through the filter part comprises SiC 2 , Si 2 C, or Si, and
wherein the ingot comprises a silicon carbide single crystal ingot.

4. The method of claim 3 , wherein the filter part has a fibrous structure.

5. The apparatus of claim 1 , wherein the filter part has a thickness in a range of 1 mm to 10 cm.

6. The apparatus of claim 1 , wherein the filter part comprises a membrane.

7. The apparatus of claim 1 , wherein the size of the pores of the first layer is greater than the size of the pores of the second layer.

8. The apparatus of claim 1 , wherein the crucible comprises graphite.

9. The apparatus of claim 8 , wherein a coating material is applied onto the graphite of the crucible, and wherein the coating material has a melting point equal to or higher than a sublimation temperature of silicon carbide.

10. The apparatus of claim 9 , wherein the coating material comprises metal carbide or metal nitride.

11. The apparatus of claim 1 , wherein the raw material comprises silicon and carbon.

12. The apparatus of claim 1 , wherein the filter part comprises a plurality of pores, and wherein sizes of the plurality of pores of the filter part are in a range of 0.1 μm to 30 μm.

13. The apparatus of claim 1 , wherein the filter part adsorbs carbon impurities and contaminants.

14. The apparatus of claim 1 , wherein an upper cover is disposed at an upper portion of the crucible.

15. The apparatus of claim 14 , wherein the upper cover comprises graphite.

16. The apparatus of claim 14 , wherein a seed holder is disposed at a lower end portion of the upper cover, and wherein the seed holder comprises graphite.

17. The apparatus of claim 1 , wherein a thermal insulator surrounds the crucible, and wherein the thermal insulator comprises a plurality of layers.

18. The apparatus of claim 1 , wherein a quartz tube is disposed on a peripheral surface of the crucible, and wherein the quartz tube has a hollow pipe shape with an empty inner space.

19. The apparatus of claim 1 , wherein a heat generation induction part is disposed out of the crucible.

20. The apparatus of claim 19 , wherein a central portion of the heat generation induction part, which is induction heated, is formed at a position lower than a central portion of the crucible.

Assignees

• Shin Dong Geun
• Son Chang Hyun
• Lg Innotek Co Ltd

Inventors

• Shin Dong Geun
• Son Chang Hyun

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• C30B23/00 Primary

  Single-crystal growth by condensing evaporated or sublimed materials · CPC title

• C30B23/005 Primary

  Controlling or regulating flux or flow of depositing species or vapour · CPC title

• C30B29/36

  Carbides · CPC title