SiC single crystal sublimation growth apparatus
US-11149359-B2 · Oct 19, 2021 · US
Controlling or regulating flux or flow of depositing species or vapour
Controlling or regulating flux or flow of depositing species or vapour · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B23/005 |
| Official title | {Controlling or regulating flux or flow of depositing species or vapour} |
| Display label | Controlling or regulating flux or flow of depositing species or vapour |
| Total patents | 104 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 4 |
| 2017 | 13 |
| 2018 | 4 |
| 2019 | 11 |
| 2020 | 6 |
| 2021 | 23 |
| 2022 | 9 |
| 2023 | 8 |
| 2024 | 9 |
| 2025 | 6 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Methods and apparatuses for crystal growth
US-2021317594-A1 · Oct 14, 2021 · US
Device for measuring a flux of matter by absorption of light, and corresponding measuring method
US-2021278342-A1 · Sep 9, 2021 · US
Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder
US-11111599-B2 · Sep 7, 2021 · US
Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal
US-11091851-B2 · Aug 17, 2021 · US
Method for producing silicon carbide single crystal
US-11078598-B2 · Aug 3, 2021 · US
Dislocation distribution for silicon carbide crystalline materials
US-2021230769-A1 · Jul 29, 2021 · US
Method for producing silicon carbide single crystal
US-2021230768-A2 · Jul 29, 2021 · US
Preparation apparatus for uniform silicon carbide crystals
US-2021189590-A1 · Jun 24, 2021 · US
Vapor phase growth apparatus
US-2021180208-A1 · Jun 17, 2021 · US
Method for preparing silicon carbide wafer and silicon carbide wafer
US-2021123843-A1 · Apr 29, 2021 · US
Molecular beam epitaxy systems with variable substrate-to-source arrangements
US-2021115588-A1 · Apr 22, 2021 · US
Methods and material deposition systems for forming semiconductor layers
US-10964537-B1 · Mar 30, 2021 · US
Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms
US-10947639-B2 · Mar 16, 2021 · US
Method of manufacturing silicon carbide single crystal ingot
US-10907272-B2 · Feb 2, 2021 · US
Silicon carbide crystal and method for manufacturing the same
US-10851470-B2 · Dec 1, 2020 · US
Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
US-10844470-B2 · Nov 24, 2020 · US
Vapor phase growth apparatus, method of manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus
US-10665460-B2 · May 26, 2020 · US
Single crystal growth method
US-2020080229-A1 · Mar 12, 2020 · US
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL AND COVERING MEMBER
US-2020080228-A1 · Mar 12, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B23/005?
- CPC C30B23/005 is the Cooperative Patent Classification code for “Controlling or regulating flux or flow of depositing species or vapour.”
- How many patents are filed under CPC C30B23/005 (Controlling or regulating flux or flow of depositing species or vapour)?
- Our database includes 104 publications tagged with this CPC code.
- Is patent activity under CPC C30B23/005 growing?
- Publication counts under this code: 9 in 2024 vs 6 in 2025 (latest complete years).