Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus

Patent metadata

Field	Value
Publication number	US-9540743-B2
Application number	US-201414566069-A
Country	US
Kind code	B2
Filing date	Dec 10, 2014
Priority date	Dec 11, 2013
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

First claim

What is claimed is:

1. A method of forming a crystallized silicon film by crystallization of amorphous silicones, comprising:
supplying a silicon raw material gas including an organic silicon compound onto a surface to be processed of an object to be processed;
supplying another silicon raw material gas excluding the organic silicon compound onto the surface to be processed; and
performing a crystallization treatment on amorphous silicon films formed on the surface to be processed to crystallize amorphous silicones contained in the amorphous silicon films.

2. A method of forming a crystallized silicon film by crystallization of amorphous silicones, comprising:
supplying a silicon raw material gas and a gas containing an impurity for suppressing the crystallization of the amorphous silicones onto a surface to be processed of an object to be processed;
after supplying the silicon raw material gas and the gas containing the impurity, supplying only the silicon raw material gas onto the surface to be processed; and
after supplying only the silicon raw material gas, performing a crystallization treatment on amorphous silicon films formed on the surface to be processed to crystallize the amorphous silicones contained in the amorphous silicon films.

3. The method of claim 2 , wherein the impurity includes at least one of carbon, oxygen, and nitrogen.

4. The method of claim 2 , wherein an insulating material is exposed from the surface to be processed.

5. The method of claim 4 , wherein the insulating material includes a silicon oxide.

6. The method of claim 2 , wherein processing temperatures in supplying a silicon raw material gas and supplying another silicon raw material gas are the same.

7. A method of manufacturing a semiconductor device using a crystallized silicon film obtained by crystallization of amorphous silicones, the method comprising:
forming the crystallized silicon film using the crystallized silicon film forming method of claim 2 .

8. The method of claim 7 , further comprising: crystallizing other amorphous silicones using a thermal history obtained in a subsequent manufacturing process performed after the amorphous silicones are crystallized.

Assignees

• Tokyo Electron Ltd

Inventors

• Takahashi Kazuya
• Furusawa Yoshikazu
• Okada Mitsuhiro
• Yonekura Hiromasa

Classifications

• C30B29/06

  Silicon · CPC title

• Y10T117/10

  Apparatus · CPC title

• C30B29/54

  Organic compounds · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title