Blank made of titanium-doped silica glass and method for the production thereof

Patent metadata

Field	Value
Publication number	US-9540271-B2
Application number	US-201514748344-A
Country	US
Kind code	B2
Filing date	Jun 24, 2015
Priority date	Jun 27, 2014
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A blank made of titanium-doped silica glass for a mirror substrate for use in EUV lithography is provided. The blank includes a surface portion to be provided with a reflective film and having an optically used area (CA) over which a coefficient of thermal expansion (CTE) has a two-dimensional inhomogeneity (dCTE) distribution profile averaged over a thickness of the blank. A maximum inhomogeneity (dCTE max ) of less than 5 ppb/K is defined as a difference between a CTE maximum value and a CTE minimum value. The dCTE max is at least 0.5 ppb/K. The CA forms a non-circular area having a centroid. The dCTE distribution profile is not rotation-symmetrical and is defined over the CA, such that straight profile sections normalized to a unit length and extending through the centroid of the area yield a dCTE family of curves forming a curve band with a bandwidth of less than 0.5×dCTE max .

First claim

We claim:

1. A blank made of titanium-doped silica glass for a mirror substrate for use in EUV lithography, the blank comprising a surface portion configured to be provided with a reflective film and having an optically used area (CA) over which a coefficient of thermal expansion (CTE) has a two-dimensional inhomogeneity (dCTE) distribution profile averaged over a thickness of the blank, a maximum inhomogeneity (dCTE max ) of less than 5 ppb/K being defined as a difference between a CTE maximum value and a CTE minimum value,
wherein the dCTE max is at least 0.5 ppb/K,
wherein the CA forms a non-circular area having a centroid,
wherein the dCTE distribution profile is not rotation-symmetrical and is defined over the CA such that straight profile sections normalized to a unit length and extending through the centroid of the non-circular area yield a dCTE family of curves forming a curve band with a bandwidth of less than 0.5×dCTE max , and
wherein the dCTE distribution profile can be mathematically described in a biunique manner by stretching a rotation-symmetrical distribution profile in at least one spatial direction, and wherein the stretching factor is at least 1.2.

2. The blank according to claim 1 , wherein the bandwidth is less than 0.3×dCTE max .

3. The blank according to claim 1 , wherein the dCTE distribution profile comprises a closed isoline with a dCTE value of 0.5 dCTE max , of which a sub-length of at least 80% of a total length of the isoline extends within the CA.

4. The blank according to claim 3 , wherein the isoline fully extends within the CA.

5. The blank according to claim 1 , wherein the non-circular area of the CA is defined by a non-circular outline along which a dCTE maximum value and a dCTE minimum value of the dCTE distribution profile are positioned, wherein the difference (PV CA ) between the dCTE maximum value and the dCTE minimum value is not more than 0.5×dCTE max .

6. The blank according to claim 5 , wherein the difference PV CA is not more than 0.3×dCTE max .

7. A blank made of titanium-doped silica glass for a mirror substrate for use in EUV lithography, the blank comprising a surface portion configured to be provided with a reflective film and having an optically used area (CA) over which a coefficient of thermal expansion (CTE) has a two-dimensional inhomogeneity (dCTE) distribution profile averaged over a thickness of the blank, a maximum inhomogeneity dCTE max ) of less than 5 ppb/K being defined as a difference between a CTE maximum value and a CTE minimum value,
wherein the dCTE max is at least 0.5 ppb/K,
wherein the CA forms a non-circular area having a centroid,
wherein the dCTE distribution profile is not rotation-symmetrical and is defined over the CA such that straight profile sections normalized to a unit length and extending through the centroid of the non-circular area yield a dCTE family of curves forming a curve band with a bandwidth of less than 0.5×dCTE max , and
wherein the dCTE distribution profile can be mathematically described in a biunique manner by stretching the round form in plural spatial directions, and wherein the spatial directions extend in a common deformation plane extending in parallel with the optically used area CA.

8. A blank made of titanium-doped silica glass for a mirror substrate for use in EUV lithography, the blank comprising a surface portion configured to be provided with a reflective film and having an optically used area (CA) over which a coefficient of thermal expansion (CTE) has a two-dimensional inhomogeneity (dCTE) distribution profile averaged over a thickness of the blank, a maximum inhomogeneity (dCTE max ) of less than 5 ppb/K being defined as a difference between a CTE maximum value and a CTE minimum value,
wherein the dCTE max is at least 0.5 ppb/K,
wherein the CA forms a non-circular area having a centroid,
wherein the dCTE distribution profile is not rotation-symmetrical and is defined over the CA such that straight profile sections normalized to a unit length and extending through the centroid of the non-circular area yield a dCTE family of curves forming a curve band with a bandwidth of less than 0.5×dCTE= max , and
wherein the dCTE distribution profile can be described by stretching the circular form in three directions extending in the same deformation plane and enclosing an angle of 120 degrees.

9. A method for producing a blank from titanium-doped silica glass for a mirror substrate for use in EUV lithography according to claim 1 , the method comprising the following steps:
(a) providing a glass cylinder of Ti-doped silica glass with a rotation-symmetrical dCTE distribution profile, and
(b) shaping the glass cylinder by softening the cylinder and forming the softened cylinder under an action of a shaping force having a force component acting in a direction perpendicular to a longitudinal axis of the glass cylinder, thereby stretching the rotation-symmetrical dCTE distribution profile in at least one direction so as to obtain a cylindrical blank which has a non-circular cross-section and a non-rotation symmetrical dCTE distribution profile.

10. The method according to claim 9 , wherein the shaping according to step (b) comprises a shaping step in which the glass cylinder along a vertically-oriented longitudinal axis thereof is arranged in a melt mold having a non-rotation symmetrical inner geometry, is heated therein to a temperature of at least 1,200° C. and is softened thereby such that softened glass flows out laterally into the melt mold under the action of gravity.

11. The method according to claim 10 , wherein the inner geometry of the melt mold, when viewed in cross section in a direction perpendicular to the longitudinal axis of the glass cylinder, has a long axis and a shorter axis in comparison therewith.

12. The method according to claim 11 , wherein the inner geometry of the melt mold is oval or rectangular in cross section.

13. The method according to claim 9 , wherein the shaping according to step b) comprises a plurality of shaping steps, wherein the glass body obtained after a first shaping step is further deformed in a second and subsequent shaping step.

14. The method according to claim 9 , wherein providing the glass cylinder according to step (a) comprises:
aa) producing a porous soot body of SiO 2 and TiO 2 by flame hydrolysis of starting substances containing silicon and titanium,
bb) drying and sintering the soot body to form an elongated glass pre-product of Ti-doped silica glass,
cc) homogenizing the glass pre-product in a homogenization process in which the pre-product is heated to a temperature of more than 1,500° C., is softened therein and is shaped into the glass cylinder.

15. The blank according to claim 7 , wherein the bandwidth is less than 0.3×dCTE max .

16. The blank according to claim 7 , wherein the dCTE distribution profile comprises a closed isoline with a dCTE value of 0.5 dCTE max , of which a sub-length of at least 80% of a total length of the isoline extends within the CA.

17. The blank according to claim 8 , wherein the bandwidth is less than 0.3×dCTE max .

18. The blank according to claim 8 , wherein the dCTE distribution profile comprises a closed isoline with a dCTE value of 0.5 dCTE max , of which a sub-length of at least 80% of a total length of the isoline extends within the CA.

19. A method for producing a blank from titanium-doped silica glass for a mirror substrate for use in EUV lithography, the blank comprising a surface portion configured to be provided with a reflectiv

Assignees

• Heraeus Quarzglas

Inventors

• Becker Klaus
• Ochs Stefan
• Thomas Stephan

Classifications

• C03B19/1453

  Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering · CPC title

• C03C2201/42

  containing titanium · CPC title

• C03B19/1469

  Means for changing or stabilising the shape or form of the shaped article or deposit · CPC title

• C03C3/06 Primary

  with more than 90% silica by weight, e.g. quartz {(C03C3/045 takes precedence)} · CPC title

• C03C2203/10

  Melting processes · CPC title