Memory subsystem command bus stress testing
US-9009540-B2 · Apr 14, 2015 · US
US9536626B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9536626-B2 |
| Application number | US-201313763511-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2013 |
| Priority date | Feb 8, 2013 |
| Publication date | Jan 3, 2017 |
| Grant date | Jan 3, 2017 |
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A memory subsystem empirically tests performance parameters of I/O with a memory device. Based on the empirical testing, the memory subsystem can set the performance parameters specific to the system in which the memory subsystem is included. A test system performs the testing. For each of multiple different settings for multiple different I/O circuit parameters, the test system sets a value for each I/O circuit parameter, generates test traffic to stress test the memory device with the parameter value(s), and measures an operating margin for the I/O performance characteristic. The test system further executes a search function to determine values for each I/O circuit parameter at which the operating margin meets a minimum threshold and performance of at least one of the I/O circuit parameters is increased. The memory subsystem sets runtime values for the I/O circuit parameters based on the search function.
Opening claim text (preview).
What is claimed is: 1. A method comprising: receiving a host memory subsystem on a host hardware platform, the host memory subsystem including a memory device; establishing respective settings for each of multiple different I/O (input/output) circuit parameters for a target I/O performance characteristic for communication with the memory device by performing the following: setting a respective value for each I/O circuit parameter; generating test traffic with a test engine embedded in the host memory subsystem to stress test the memory device; and measuring an operating margin for the I/O performance characteristic; repeating the setting, generating and measuring for different values of at least one of the I/O circuit parameters so that a plurality of measurements for different I/O circuit parameter settings is made; executing a search function to determine values for each I/O circuit parameter at which the operating margin meets a minimum threshold, wherein the search function extrapolates from the plurality of measurements to a worst case condition; and setting runtime values for the I/O circuit parameters based on the execution of the search function. 2. The method of claim 1 , wherein the memory device comprises a DRAM (dynamic random access memory) device. 3. The method of claim 1 , wherein the target I/O performance characteristic comprises: power consumption of the memory subsystem. 4. The method of claim 1 , wherein the target I/O performance characteristic comprises: operating frequency of the memory subsystem. 5. The method of claim 1 , wherein the target I/O performance characteristic comprises: I/O latency of the memory subsystem. 6. The method of claim 1 , wherein setting the value for the I/O circuit parameter comprises: setting one of an output resistance of a transmitter, or an input resistance of a receiver. 7. The method of claim 1 , wherein setting the value for the I/O circuit parameter comprises: setting a slew rate of an output driver or a value of an equalization stage. 8. The method of claim 1 , wherein setting the value of the I/O circuit parameter comprises: setting a value of a turnaround time. 9. The method of claim 1 , wherein setting the value of the I/O circuit parameter comprises: setting parameters of a receive circuit separately from a transmit circuit. 10. The method of claim 1 , wherein setting the value of the I/O circuit parameter comprises: adjusting an operating voltage or a temperature. 11. The method of claim 1 , wherein measuring the operating margin comprises: measuring power consumption of an I/O exchange. 12. The method of claim 1 , wherein measuring the operating margin comprises: measuring an eye width of an output signal curve. 13. The method of claim 1 , wherein measuring the operating margin comprises: measuring an eye height of an output signal curve. 14. The method of claim 1 , wherein measuring the operating margin comprises: measuring an operating frequency of the memory subsystem. 15. The method of claim 1 , wherein executing the search function comprises: performing an n-dimensional search, n 1-dimensional searches, a linear fit search, a quadratic fit search, a steepest descent search, or a curve fitting search. 16. The method of claim 1 , wherein executing the search function further comprises: correlating multiple test results to compensate for noise. 17. An apparatus comprising: a host hardware platform including a processor; a test system embedded in a memory controller to perform a search for parameter settings for a memory device, including to establish respective settings for each of multiple different I/O (input/output) circuit parameters for a target I/O performance characteristic for I/O with the memory device: set a value for each I/O circuit parameter, generate test traffic with a test engine embedded in the memory controller to stress test the memory device, and measure an operating margin for the I/O performance characteristic, repeatedly set a new value for at least one of the I/O circuit parameters and generate test traffic with the test engine to repeatedly stress test the memory device so that a plurality of measurements with different I/O circuit parameters is made; execute a search function to determine values for each I/O circuit parameter at which the operating margin meets a minimum threshold, wherein, the search function is to extrapolate from the plurality of measurements to a worst case condition, and set runtime values for the I/O circuit parameters based on the execution of the search function. 18. The apparatus of claim 17 , wherein the target I/O performance characteristic comprises: power consumption of a memory subsystem that includes the memory controller and the memory device, operating frequency of the memory subsystem, or I/O latency of the memory subsystem. 19. The apparatus of claim 17 , wherein the test system is to set the value for the I/O circuit parameter including set one of an output resistance of a transmitter, or an input resistance of a receiver, set a slew rate of an output driver or a value of an equalization stage, set a value of a turnaround time, or set parameters of a receive circuit separately from a transmit circuit. 20. The apparatus of claim 17 , wherein the test system is to measure the operating margin including measure power consumption of an I/O exchange, measure an eye width of an output signal curve, measure an eye height of an output signal curve, or measure frequency. 21. The apparatus of claim 17 , wherein the test system is to execute the search function including perform an n-dimensional search, n 1-dimensional searches, a linear fit search, a quadratic fit search, a steepest descent search, or a curve fitting search. 22. An electronic device comprising: a host hardware platform including a processor; a memory subsystem on the host hardware platform including a memory controller and a memory device; and a test system embedded in the memory subsystem to perform a search for parameter settings, including to establish respective settings for each of multiple different I/O (input/output) circuit parameters for a target I/O performance characteristic for I/O with the memory device: set a value for each I/O circuit parameter, generate test traffic with a test engine embedded in the memory controller to stress test the memory device, and measure an operating margin for the I/O performance characteristic, and repeatedly set a new value for at least one of the I/O circuit parameters and generate test traffic with the test engine to repeatedly stress test the memory device so that a plurality of measurements with different I/O circuit parameters is made; execute a search function to determine values for each I/O circuit parameter at which the operating margin meets a minimum threshold, and performance of at least one of the I/O circuit parameters is increased, wherein, the search function is to extrapolate from the plurality of measurements to a worst case condition, and set runtime values for the I/O circuit parameters based on the execution of the search function. 23. The electronic device of claim 22 , wherein the target I/O performance characteristic comprises: power consumption of the memory subsystem, operating frequency of the memory subsystem, or I/O latency of the memory subsystem.
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