Illumination system of a microlithographic projection exposure apparatus
US-9213244-B2 · Dec 15, 2015 · US
US9523922B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9523922-B2 |
| Application number | US-201414314725-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 25, 2014 |
| Priority date | Sep 29, 2008 |
| Publication date | Dec 20, 2016 |
| Grant date | Dec 20, 2016 |
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An illumination system of a microlithographic projection exposure apparatus includes a primary light source, a system pupil surface and a mirror array. The mirror array is arranged between the primary light source and the system pupil surface. The mirror array includes a plurality of adaptive mirror elements. Each mirror element includes a mirror support and a reflective coating. Each mirror element is configured to direct light produced by the primary light source towards the system pupil surface. The mirror elements can be tiltably mounted with respect to a support structure. The mirror elements include structures having a different coefficient of thermal expansion and being fixedly attached to one another. A temperature control device is configured to variably modify the temperature distribution within the structures to change the shape of the mirror elements.
Opening claim text (preview).
What is claimed is: 1. An illumination system, comprising: a mirror array comprising a plurality of mirror elements, each mirror element comprising: a mirror support; and a reflective coating attached to the mirror support; and a temperature control device, wherein: for each mirror element, the reflective coating has a coefficient of thermal expansion which is different from a coefficient of thermal expansion of the mirror support; for each mirror element, the temperature control device is configured so that, during use of the temperature control device, the temperature control device variably modifies a temperature distribution within the mirror support and the reflective coating to individually change a shape of the mirror element; for each mirror element, optical axes of the mirror element define an angle of more than 20° with an optical axis of a mirror which immediately precedes the mirror array in a propagation direction of light through the illumination system during use of the illumination system; the illumination system is configured to be used with light having a wavelength below 50 nm; and the illumination system is a microlithographic illumination system. 2. The illumination system of claim 1 , wherein the illumination system is configured to be used with light having a wavelength between 13 nm and 14 nm. 3. The illumination system of claim 1 , wherein: each mirror element comprises a concave mirror surface; and for each mirror element, the temperature control device is configured so that, during use of the temperature control device, the temperature control device modifies the temperature distribution within the mirror element so that the mirror element has different focal lengths in two orthogonal planes. 4. The illumination system of claim 1 , wherein the temperature control device comprises members applied to the mirror supports, and the members are selected from the group consisting of heating members and cooling members. 5. The illumination system of claim 4 , wherein the members comprise patterns of electrically conductive resistance wires. 6. The illumination system of claim 4 , wherein the members comprise Peltier elements. 7. The illumination system of claim 1 , wherein the temperature control device comprises a radiation system configured to selectively direct radiation to target areas on the reflective coatings. 8. The illumination system of claim 7 , wherein the reflective coatings are configured to absorb the radiation. 9. The illumination system of claim 7 , wherein: the illumination system comprises a primary light source configured to produce the light; the radiation system comprises a secondary light source configured to produce a beam of the radiation; and the temperature control device comprises a spatial light modulator configured to move the beam of the radiation over the target areas. 10. The illumination system of claim 7 , wherein the target areas are different for different mirror elements. 11. The illumination system of claim 1 , wherein the temperature control device is configured so that, during use of the illumination system, the temperature control device predicts a shape of the mirror elements taking into account bending forces produced by the different coefficients of thermal expansion. 12. The illumination system of claim 1 , wherein the temperature control device is configured so that, during use of the illumination system, the temperature control device predicts a shape of the mirror elements taking into account bending forces produced by a non-homogenous temperature profile in the mirror elements. 13. The illumination system of claim 1 , further comprising a support structure, wherein each mirror element is tiltably mounted with respect to the support structure. 14. The illumination system of claim 1 , further comprising the optical element which immediately precedes the mirror array in the propagation direction of the light, wherein the optical element comprises a field defining mirror which comprises a plurality of field mirror elements. 15. The illumination system of claim 1 , further comprising a light source configured to produce a beam of the light having an axis of symmetry that defines an angle of less than 45° with respect to a horizontal plane. 16. The illumination system of claim 15 , wherein the axis of symmetry defines an angle of less than 20° with respect to the horizontal plane. 17. The illumination system of claim 1 , wherein, for each mirror element, the optical axes of the mirror element define an angle of more than 30° with the optical axis of the mirror which immediately precedes the mirror array in a propagation direction of light through the illumination system during use of the illumination system. 18. An apparatus, comprising: an illumination system according to claim 1 ; and a projection objective, wherein the apparatus is a microlithography projection exposure apparatus. 19. An illumination system comprising: a mirror array comprising a plurality of mirror elements, wherein: for each mirror element, optical axes of the mirror element define an angle of more than 20° with an optical axis of a mirror which immediately precedes the mirror array in a propagation direction of light through the illumination system during use of the illumination system; the illumination system is configured to be used with light having a wavelength below 50 nm; and the illumination system is a microlithographic illumination system. 20. The illumination system of claim 19 , wherein each mirror element comprises a concave mirror surface having different focal lengths in two orthogonal planes. 21. The illumination system of claim 19 , wherein, for each mirror element, the optical axes of the mirror element define an angle of more than 30° with the optical axis of the mirror which immediately precedes the mirror array in a propagation direction of light through the illumination system during use of the illumination system.
Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets · CPC title
Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction · CPC title
Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices · CPC title
Mask illumination systems · CPC title
Temperature · CPC title
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