Aluminum selective etch

Patent metadata

Field	Value
Publication number	US-9520303-B2
Application number	US-201414460115-A
Country	US
Kind code	B2
Filing date	Aug 14, 2014
Priority date	Nov 12, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl 2 ) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.

First claim

The invention claimed is:

1. A method of etching a patterned substrate, the method comprising:
placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises an aluminum layer and a silicon-containing layer;
flowing a chlorine-containing precursor into a remote plasma region within the substrate processing chamber and exciting the chlorine-containing precursor in a remote plasma in the remote plasma region to produce plasma effluents, wherein the remote plasma region is fluidly coupled with the substrate processing region through a showerhead;
flowing the plasma effluents into the substrate processing region through the showerhead; and
selectively etching the aluminum layer, wherein an electron temperature in the substrate processing region while selectively etching the aluminum layer is below 0.5 eV.

2. The method of claim 1 wherein the chlorine-containing precursor is one of halogen-containing precursor comprises one or more of atomic chlorine, molecular chlorine (Cl 2 ), hydrogen chloride (HCl), carbon tetrachloride (CCl 4 ), or boron trichloride (BCl 3 ).

3. The method of claim 1 wherein the aluminum layer and the silicon-containing layer are each exposed and selectively etching the aluminum layer comprises removing the aluminum layer at least fifteen times faster than the silicon-containing layer.

4. The method of claim 1 wherein the silicon-containing layer comprises silicon oxide, silicon nitride, silicon carbon nitride or silicon oxycarbide.

5. The method of claim 1 wherein the aluminum layer consists of aluminum.

6. A method of etching a substrate, the method comprising:
placing the substrate in a substrate processing region of a substrate processing chamber, wherein the substrate comprises an aluminum oxide layer overlying an aluminum layer, wherein the aluminum oxide layer consists of aluminum and oxygen;
flowing boron tribromide into the substrate processing region;
removing the aluminum oxide layer to expose the aluminum layer, wherein the boron tribromide is not passed through any plasma prior to entering the substrate processing region nor within the substrate processing region, while removing the aluminum oxide layer;
flowing molecular chlorine into a remote plasma region within the substrate processing chamber and exciting the molecular chlorine in a plasma in the remote plasma region to produce plasma effluents, wherein the remote plasma region is fluidly coupled with the substrate processing region through a showerhead;
flowing the plasma effluents into the substrate processing region through the showerhead; and
selectively etching the aluminum layer.

7. The method of claim 6 further comprising removing any process effluents between removing the aluminum oxide layer and flowing molecular chlorine.

8. The method of claim 6 wherein the substrate processing region is plasma-free while removing the aluminum oxide layer and selectively etching the aluminum layer.

9. The method of claim 6 wherein the boron tribromide is not passed through any plasma prior to entering the substrate processing region nor within the substrate processing region.

10. The method of claim 6 wherein a pressure in the substrate processing region is greater than 0.1 Torr while removing the aluminum oxide layer.

11. A method of etching a substrate, the method comprising:
placing the substrate in a substrate processing region of a substrate processing chamber, wherein the substrate comprises an aluminum oxide layer overlying an aluminum layer, wherein the aluminum oxide layer consists of aluminum and oxygen and the aluminum layer consists of aluminum;
flowing boron trichloride into a remote plasma region within the substrate processing chamber and exciting the boron trichloride in a first plasma in the remote plasma region to produce first plasma effluents, wherein the remote plasma region is fluidly coupled with the substrate processing region through a showerhead;
flowing the first plasma effluents through the showerhead into the substrate processing region and applying a local bias plasma power to further excite the first plasma effluents;
removing the aluminum oxide layer to expose the aluminum layer;
flowing molecular chlorine into the remote plasma region and exciting the molecular chlorine in a second plasma in the remote plasma region to produce second plasma effluents;
flowing the second plasma effluents into the substrate processing region through the showerhead; and
selectively etching the aluminum layer, wherein an electron temperature in the substrate processing region while selectively etching the aluminum layer is below 0.5 eV.

12. The method of claim 11 wherein a temperature of the substrate during both removing the aluminum oxide layer and removing the aluminum layer is between about 60° C. and about 120° C.

13. The method of claim 11 wherein the substrate processing region is plasma-free while selectively etching the aluminum layer.

14. The method of claim 11 wherein an electron temperature in the substrate processing region while removing the aluminum oxide layer is greater than 0.5 eV.

Assignees

• Applied Materials Inc

Inventors

• Wang Xikun
• Wang Anchuan
• Ingle Nitin K

Classifications

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/266

  by vapour etching only · CPC title