Atomic layer deposition processing apparatus to reduce heat energy conduction

Patent metadata

Field	Value
Publication number	US-9518321-B2
Application number	US-201414483619-A
Country	US
Kind code	B2
Filing date	Sep 11, 2014
Priority date	Jul 31, 2014
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

First claim

What is claimed is:

1. An atomic layer deposition processing apparatus comprising:
a chamber lid assembly including:
a gas dispersing channel, connected to a first gas delivery system and a second gas delivery system, the gas dispersing channel extending along a central vertical axis and having an upper portion and a lower portion, the upper portion having a cylindrical shape along the central vertical axis and the lower portion having a conical shape tapering away from the central vertical axis and extending along a horizontal axis;
a first heater element and a first temperature sensor, integral to a bottom wall of the chamber lid assembly that is located above the lower portion of the gas dispersing channel, the first temperature sensor configured to detect a first temperature at a first location at a first side relative to the central vertical axis and configured to output first temperature information corresponding to the first temperature to a temperature comparator, and
a choke connected to the bottom wall of the chamber lid assembly;
a susceptor spaced a distance from the chamber lid assembly and extending along the horizontal axis, the susceptor including a substrate receiving surface, a second heater configured to heat a surface adjacent the substrate receiving surface and a second temperature sensor configured to detect a second temperature at a second location at a second side opposing the first side relative to the central vertical axis, and configured to output second temperature information corresponding to the second temperature to the temperature comparator;
a process chamber enclosing at least the chamber lid assembly and the susceptor, the process chamber that is connected to the bottom wall of the chamber lid assembly by one or more thermal attenuation parts, wherein the thermal attenuation parts attenuate heat energy generated by the first heater;
the temperature comparator configured to:
compare the first temperature information with the second temperature information; and
determine a temperature difference between the first temperature and the second temperature; and

a controller configured to:
control the first gas delivery system and the second gas delivery system to supply gases to the substrate alternately; and
control the first heater or the second heater so that the temperature difference between the first temperature at the first location and the second temperature at the second location is decreased,

wherein an outside edge of the cover is arranged further outward in a horizontal direction from the central vertical axis than a corresponding outside edge of the substrate on the susceptor, and
wherein an outside edge of an element of the first heater embedded in the cover is arranged further outward in a horizontal direction from the central vertical axis than a corresponding outside edge of the substrate on the susceptor.

2. The atomic layer deposition processing apparatus of claim 1 , wherein the first heater is covered by a cover at least partially made by a material having a higher thermal conductivity than that of chamber lid assembly, the cover being installed facing the substrate receiving surface.

3. The atomic layer deposition processing apparatus of claim 1 , wherein the process chamber has no wall that defines a part of the gas dispersing channel at the position corresponding to the center of a substrate disposed on the substrate receiving surface.

4. The atomic layer deposition processing apparatus of claim 1 , wherein the distance between the susceptor and the chamber lid assembly is between 0.02 inches and 2.0 inches.

Assignees

• Hitachi Int Electric Inc

Inventors

• Tanabe Mitsuro
• Yanagisawa Yoshihiko
• Yuasa Kazuhiro
• Sakai Masanori
• Tsubota Yasutoshi

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• C23C16/4586

  Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title

• B05C9/14

  the auxiliary operation involving heating {or cooling} · CPC title

• C23C16/45582

  Expansion of gas before it reaches the substrate · CPC title

• H05B1/0233

  for semiconductors manufacturing · CPC title