Atomic layer deposition apparatus and method

Patent metadata

Field	Value
Publication number	US-9512519-B2
Application number	US-201213692972-A
Country	US
Kind code	B2
Filing date	Dec 3, 2012
Priority date	Dec 3, 2012
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions.

First claim

What is claimed is:

1. An atomic layer deposition apparatus, comprising:
a chamber including a plurality of vertically offset regions;
a heating device providing specific temperature ranges for the plurality of regions; and
an injector having a gas flow path, the gas flow path including a first hole with a first geometric parameter and a second hole with a second geometric parameter different from the first geometric parameter, the injector being adapted to deliver precursor gas at a first gaseous flow rate in a first region of the plurality of region to form a first film at a first deposition rate and to simultaneously deliver precursor gas at a second gaseous flow rate in a second region of the plurality of regions to form a second film at a second deposition rate different than the first deposition rate, the first film and the second film being of the same composition; and
a second injector having a second gas flow path, the second gas flow path including a third hole with a third geometric parameter and a fourth hole with a fourth geometric parameter different from the third geometric parameter, the second injector being adapted to deliver a second precursor gas at a third gaseous flow rate in the first region of the plurality of regions to form the first film at the first deposition rate and to simultaneously deliver the second precursor gas at a fourth gaseous flow rate in the second region of the plurality of regions to form the second film at the second deposition rate different than the first deposition rate, the first film and the second film being of the same composition.

2. The atomic layer deposition apparatus according to claim 1 further comprising a second injector within the chamber and extending through the first region and the second region, the second injector having including a plurality of third holes each with a third geometric parameter and a plurality of second fourth each with a fourth second geometric parameter different from the third geometric parameter, the second injector being adapted to deliver a second precursor gas at a third gaseous flow rate in the first region to form the first film at a first deposition rate and to deliver precursor gas at a second gaseous flow rate in the second region to form the second film at a second deposition rate different than the first deposition rate.

3. The atomic layer deposition apparatus according to claim 2 further comprising plural injectors located in the chamber, wherein each injector has a bore having a specific geometric parameter.

4. The atomic layer deposition apparatus according to claim 3 , wherein the plural injectors are adapted to control a plurality of reaction cycles by the respective specific geometric parameters for respective deposition thicknesses in a wafer layer deposition process, and a batch of wafers are provided to the chamber before the wafer layer deposition process begins.

5. The atomic layer deposition apparatus according to claim 4 , further comprising a plurality of heaters configured to perform a temperature tuning for the plurality of regions respectively for one of the plurality of reaction cycles in the wafer layer deposition process, and wherein the chamber provides at least one precursor being pulsed onto the batch of wafers during the wafer layer deposition process.

6. The atomic layer deposition apparatus according to claim 5 , wherein each precursor has a thermal stability below a predefined deposition temperature, and is used during the wafer layer deposition process for a self limiting growth.

7. The atomic layer deposition apparatus according to claim 4 , wherein the plurality of regions further comprises a dummy region configured to stabilize the wafer layer deposition process.

8. An atomic layer deposition apparatus, comprising:
a chamber including a plurality of regions having at least a first region and a second region vertically offset from the first region, the first region adapted to produce a first film having a first thickness, and the second region adapted to produce a second film having a second thickness different from the first thickness simultaneously with production of the first film having the first thickness, the first film and second film having the same composition; and
an injector having a gas flow path, the gas flow path including a first hole with a first geometric parameter and a second hole with a second geometric parameter different from the first geometric parameter, the injector being adapted to deliver precursor gas at a first gaseous flow rate in the first region to form the first film at a first deposition rate and to simultaneously deliver precursor gas at a second gaseous flow rate in the second region to form the second film at a second deposition rate different than the first deposition rate; and
a second injector having a second gas flow path, the second gas flow path including a third hole with a third geometric parameter and a fourth hole with a fourth geometric parameter different from the third geometric parameter, the second injector being adapted to deliver a second precursor gas at a third gaseous flow rate in the first region to form the first film at the first deposition rate and to deliver the second precursor gas at a fourth gaseous flow rate in the second region to form the second film at the second deposition rate different than the first deposition rate.

9. The atomic layer deposition apparatus according to claim 8 , wherein one of the first hole and the second hole corresponds to a specific one of the plurality of regions.

10. The atomic layer deposition apparatus according to claim 9 further comprising, a plurality of heaters respectively corresponding to the plurality of regions to control respective deposition thicknesses of respective atomic layers in the plurality of regions.

11. The atomic layer deposition apparatus according to claim 10 , wherein the plurality of regions further comprise at least one dummy region adapted stabilize a deposition process at a rate intermediate a deposition process in the first region and a deposition process in the second region.

12. The atomic layer deposition apparatus according to claim 8 , wherein the first and second geometric parameters are selected from the group consisting of hole size, hole shape, and hole area, and combinations thereof.

13. An atomic layer deposition apparatus, comprising:
a chamber adapted to simultaneously deposit a first film having a first thickness on each of a plurality of first wafers located in a first region of the chamber, and a second film having a second thickness different from the first thickness on each of a plurality of second wafers located in a second region of the chamber vertically offset from the first region of the chamber, both the first and second film being deposited in a same period of time and both the first film and second film being of the same composition; and
an injector within the chamber and extending through the first region and the second region, the injector including a plurality of first holes each with a first geometric parameter and a plurality of second holes each with a second geometric parameter different from the first geometric parameter, the injector being adapted to deliver a precursor gas at a first gaseous flow rate in the first region to form the first film at a first deposition rate and to deliver precursor gas at a second gaseous flow rate in the second region to form the second film at a second deposition rate different than the first deposition rate; and
a second injector within the chamber and extending through the first region and the second region, the second injector including a plurali

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chuang Chia-Yi
• Lee Hsing-Jui
• Chen Ming-Te

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/60

  of insulating materials · CPC title

• C23C16/45574 Primary

  Nozzles for more than one gas · CPC title

• H01L21/3141

  Electricity · mapped topic

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title