Coating substrate using bernoulli atomic-layer deposition

Patent metadata

Field	Value
Publication number	US-9499906-B2
Application number	US-201514621437-A
Country	US
Kind code	B2
Filing date	Feb 13, 2015
Priority date	Feb 13, 2015
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A method for depositing a thin film on a moveable substrate using atmospheric pressure atomic-layer deposition provides a chamber including a stationary support, through which fluid flows, that supports a moveable substrate. A moveable substrate includes a levitation stabilizing structure on the substrate that defines an enclosed interior impingement area of the substrate. The moveable substrate is positioned proximate to the stationary support so that the stationary support extends beyond the enclosed interior impingement area and the fluid flow is directed within the enclosed interior impingement area of the moveable substrate. A fluid flow, provided from a pressurized-gas source through the stationary support, impinges on the moveable substrate surface within the enclosed interior impingement area to levitate and expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure to deposit a thin film on the moveable substrate.

First claim

The invention claimed is:

1. A method for depositing a thin film on a moveable substrate, comprising:
providing a chamber that includes a stationary support through which fluid can flow;
providing a moveable substrate that includes a levitation stabilizing structure affixed to the moveable substrate that defines an enclosed interior impingement area of the moveable substrate;
positioning the moveable substrate proximate to the stationary support so that the stationary support extends beyond the enclosed interior impingement area and the fluid flow is directed within the enclosed interior impingement area of the moveable substrate; and
levitating the moveable substrate by providing a fluid flow from a pressurized-gas source through the stationary support that impinges perpendicularly on the moveable substrate surface within the enclosed interior impingement area of the moveable substrate to expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure to deposit a thin film on the moveable substrate.

2. The method of claim 1 , wherein providing the fluid flow includes providing a plurality of fluid flows.

3. A method for depositing a thin film on a moveable substrate, comprising:
providing a chamber that includes a stationary support through which fluid can flow;
providing a moveable substrate that includes a levitation stabilizing structure affixed to the moveable substrate that defines an enclosed interior impingement area of the moveable substrate;
positioning the moveable substrate proximate to the stationary support so that the stationary support extends beyond the enclosed interior impingement area and the fluid flow is directed within the enclosed interior impingement area of the moveable substrate; and
levitating the moveable substrate by providing a plurality of fluid flows from a pressurized-gas source through the stationary support that impinges on the moveable substrate surface within the enclosed interior impingement area of the moveable substrate to expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure to deposit a thin film at atmospheric pressure on the moveable substrate, wherein the plurality of fluid flows includes one or more of an inert gas, a first reactive gas, and a second reactive gas.

4. The method of claim 3 , further comprising activating one or more valves to sequentially control the provision of inert and reactive gases.

5. The method of claim 1 , wherein forming the thin film layer on the moveable substrate with the fluid flow includes forming a conformal atomic thin film layer on the moveable substrate.

6. The method of claim 1 , wherein providing the moveable substrate includes providing a moveable substrate that has an existing layer, further comprising locating at least a portion of the levitation stabilizing structure on the existing layer.

7. The method of claim 1 , wherein providing the fluid flow includes directing the fluid flow to at least one of the centroid of the moveable substrate and the centroid of the enclosed interior impingement area.

8. The method of claim 1 , wherein depositing the thin film on the moveable substrate includes patterning the thin film layer with the fluid flow by locating an additional structure within the enclosed interior impingement area of the levitation stabilizing structure.

9. The method of claim 1 , further comprising controlling the temperature of the moveable substrate, the stationary support, or the fluid.

10. A method for depositing a thin film on a moveable substrate, comprising:
providing a chamber that includes a stationary support through which fluid can flow;
providing a moveable substrate that includes a levitation stabilizing structure affixed to the moveable substrate that defines an enclosed interior impingement area of the moveable substrate;
positioning the moveable substrate proximate to the stationary support so that the stationary support extends beyond the enclosed interior impingement area and the fluid flow is directed within the enclosed interior impingement area of the moveable substrate;
levitating the moveable substrate by providing a fluid flow from a pressurized-gas source through the stationary support that impinges on the moveable substrate surface within the enclosed interior impingement area of the moveable substrate to expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure to deposit a thin film on the moveable substrate;
coating the moveable substrate with a curable layer;
exposing the curable layer to patterned radiation to form a patterned cured layer; and
removing the uncured curable layer to form the levitation stabilizing structure.

11. The method of claim 10 , further comprising removing the patterned cured layer after depositing the thin film on the moveable substrate.

12. The method of claim 1 , further including mechanically attaching the levitation stabilizing structure to the moveable substrate.

13. The method of claim 12 , further including mechanically detaching the levitation stabilizing structure from the moveable substrate after depositing the thin film on the moveable substrate.

14. The method of claim 1 , wherein the fluid is a gas or a liquid.

15. A method for fluidically levitating a moveable substrate comprising:
providing a stationary support through which fluid can flow and which supports a moveable substrate;
providing a moveable substrate that includes a levitation stabilizing structure affixed to the moveable substrate that defines an enclosed interior impingement area of the moveable substrate;
positioning the moveable substrate in a spatial relationship with the stationary support so that the stationary support extends beyond the enclosed interior impingement area; and
levitating the moveable substrate by providing a fluid flow through the stationary support that impinges perpendicularly on the moveable substrate surface within the enclosed interior impingement area of the moveable substrate to expose the moveable substrate to the fluid while restricting the lateral motion of the moveable substrate with the levitation stabilizing structure.

16. The method of claim 15 , wherein providing the fluid flow includes providing a plurality of fluid flows.

Assignees

• Eastman Kodak Co

Inventors

• Sieber Kurt D
• Ng Kam Chuen
• Cok Ronald Steven

Classifications

• H10P72/78

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• C23C16/405 Primary

  of refractory metals or yttrium · CPC title

• C23C16/45525 Primary

  Atomic layer deposition [ALD] · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title

• C23C16/48

  by irradiation, e.g. photolysis, radiolysis, particle radiation · CPC title