Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Reclaiming processing method for delaminated wafer
US9496130B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9496130-B2 |
| Application number | US-201214349133-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2012 |
| Priority date | Oct 17, 2011 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
The invention provides a reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-produce at the time of producing a bonded wafer is subjected to reclaiming polishing and is again available as a bond wafer or a base wafer, wherein, in the reclaiming polishing, the delaminate wafer is polished with use of a double-side polisher in a state that oxide film is not formed on a delaminated surface of the delaminated wafer and oxide film is formed on a back side which is the opposite side of the delaminated surface. As a result, the reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-product at the time of manufacturing a bonded wafer based on an ion implantation delamination method is subjected to the reclaiming polishing, which enables sufficiently improving quality.
First claim
Opening claim text (preview).
The invention claimed is: 1. A reclaiming processing method for a delaminated wafer, by which the delaminated wafer is subjected to reclaiming polishing and it is again available as a bond wafer or a base wafer, the delaminated wafer being obtained as a by-product at the time of producing a bonded wafer having a thin film on the base wafer by forming an ion implanted layer by ion-implanting at least one type of gas ions selected from hydrogen ions and rare gas ions into a surface of a bond wafer, bonding an ion implanted surface of the bond wafer to a surface of the base wafer directly or through an oxide film, then delaminating the bond wafer at the ion implanted layer, wherein a delaminated surface on which the oxide film is not formed and a step portion generated on an unbonded portion at an outer periphery of the delaminated wafer are subjected to polishing by performing double-side polishing using a double-side polisher in a state that the oxide film is not formed on the delaminated surface of the delaminated wafer and the oxide film is formed on a back side which is the opposite side of the delaminated surface, wherein the oxide film other than the oxide film on the back side of the delaminated wafer is removed, and then the reclaiming polishing is carried out.
Assignees
Inventors
Classifications
Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title
- H10P90/1916Primary
with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title
Cleaning of wafer edges · CPC title
- H10P90/16Primary
by reclaiming or re-processing · CPC title
- H01L21/02032Primary
Electricity · mapped topic
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- What does patent US9496130B2 cover?
- The invention provides a reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-produce at the time of producing a bonded wafer is subjected to reclaiming polishing and is again available as a bond wafer or a base wafer, wherein, in the reclaiming polishing, the delaminate wafer is polished with use of a double-side polisher in a state that oxide f…
- Who is the assignee on this patent?
- Ishizuka Toru, Okubo Yuji, Sasaki Takuya, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10P90/1916. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).