Laminating magnetic cores for on-chip magnetic devices

Patent metadata

Field	Value
Publication number	US-9495989-B2
Application number	US-201313760154-A
Country	US
Kind code	B2
Filing date	Feb 6, 2013
Priority date	Feb 6, 2013
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

First claim

What is claimed is:

1. A multi-layer laminating structure consisting of:
a magnetic unit layer consisting of first and second magnetic layers and a conductive non-magnetic spacer layer therebetween;
at least one additional magnetic unit layer consisting of first and second magnetic layers and a conductive non-magnetic spacer layer therebetween, wherein the conductive non-magnetic spacer layer is at a thickness of 5 nanometers to 30 nanometers, wherein the conductive non-magnetic spacer layers are non-magnetic materials selected from the group consisting of molybdenum, zinc, rubidium, gold, silver, selenium, tellurium, sulfur, phosphorous, gallium, chromium, rhenium, indium, tin, nickel phosphorous, nickel boron, and non-magnetic alloys thereof;
and a resistive spacer disposed between the first and at least one additional magnetic unit layers, wherein the resistive spacer is a resistive material selected from the group consisting of selenium, bismuth, tellurium, phosphorous, sulfur, germanium, antimony, and alloys thereof that can be electrochemically reduced, wherein the resistive spacer is at a thickness of 100 nm to 1 μm,
wherein the resistive spacer is thicker and more resistive than the conductive non-magnetic spacer layers in the magnetic unit layer and the at least one additional magnetic layer, and wherein each one of the first and second magnetic layers in the magnetic unit layer and the at least one additional magnetic unit layer is at a thickness less than a skin depth.

2. The structure as claimed in claim 1 further comprising a seed layer disposed on the first magnetic layer of the magnetic unit layer and the at least one additional magnetic layer.

3. The structure as claimed in claim 2 further comprising a substrate disposed on the seed layer.

4. The structure as claimed in claim 1 wherein the conductive non-magnetic spacer layers of the magnetic unit layer and the at least one additional magnetic layer removes closure domains in the structure via magneto-static coupling between the first and second magnetic layers.

5. The structure as claimed in claim 4 wherein the resistive spacer reduces eddy current in the structure.

Assignees

• IBM

Inventors

• Fontana Jr Robert E
• Gallagher William J
• Herget Philipp
• O'Sullivan Eugene J
• Romankiw Lubomyr T
• Wang Naigang
• Webb Bucknell C

Classifications

• C25D3/58

  containing more than 50% by weight of copper · CPC title

• H01F10/3231

  via a non-magnetic spacer · CPC title

• C25D5/10 Primary

  Electroplating with more than one layer of the same or of different metals (for bearings C25D7/10) · CPC title

• G11B5/66 Primary

  the record carriers consisting of several layers · CPC title

• C25D5/18

  Electroplating using modulated, pulsed or reversing current · CPC title