Scatterometry-based imaging and critical dimension metrology

Patent metadata

Field	Value
Publication number	US-9494535-B2
Application number	US-201514690442-A
Country	US
Kind code	B2
Filing date	Apr 19, 2015
Priority date	Apr 21, 2014
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

Methods and systems for performing measurements of semiconductor structures and materials based on scatterometry measurement data are presented. Scatterometry measurement data is used to generate an image of a material property of a measured structure based on the measured intensities of the detected diffraction orders. In some examples, a value of a parameter of interest is determined directly from the map of the material property of the measurement target. In some other examples, the image is compared to structural characteristics estimated by a geometric, model-based parametric inversion of the same measurement data. Discrepancies are used to update the geometric model of the measured structure and improve measurement performance. This enables a metrology system to converge on an accurate parametric measurement model when there are significant deviations between the actual shape of a manufactured structure subject to model-based measurement and the modeled shape of the structure.

First claim

What is claimed is:

1. A method comprising:
illuminating a measurement target with a beam of x-ray radiation;
detecting one or more intensities each associated with one or more diffraction orders of an amount of radiation scattered from the measurement target in response to the incident beam of x-ray radiation; and
determining a map of a material property of the measurement target based on the detected intensities of the diffraction orders, wherein the material property is any of a complex refractive index, an electron density, and an absorptivity of the measurement target.

2. The method of claim 1 , wherein the measurement target is a structure disposed on a planar substrate, wherein the structure is spatially periodic in at least one direction parallel to a planar surface of the planar substrate.

3. The method of claim 1 , wherein the illuminating of the measurement target involves illuminating the measurement target with the beam of x-ray radiation at a plurality of angles of incidence with respect to the measurement target.

4. The method of claim 1 , wherein the illuminating of the measurement target involves illuminating the measurement target with x-ray radiation at a plurality of different wavelengths.

5. The method of claim 1 , wherein the determining the map of the material property of the measurement target involves a fitting analysis of the detected intensities of the diffraction orders with a free-form model that estimates values of the intensities of the diffraction orders based on an assumed map of the material property of the measurement target.

6. The method of claim 5 , wherein the fitting analysis involves minimizing a difference between the detected intensities of the diffraction orders and the estimated intensities of the diffraction orders.

7. The method of claim 5 , wherein the fitting analysis involves minimizing a functional of the material property of the measurement target.

8. The method of claim 7 , wherein the fitting analysis involves minimizing a functional of the material property of the measurement target subject to an upper bound on a value of a difference between the detected intensities of the diffraction orders and the estimated intensities of the diffraction orders.

9. The method of claim 5 , wherein the free-form model includes a plurality of volume elements representative of the measured target, and wherein the shape of at least one of the volume elements is changed during at least one iteration of the fitting analysis.

10. The method of claim 5 , further comprising:
determining at least one specimen parameter value associated with the measurement target based on a fitting analysis of the detected intensities of the diffraction orders with a geometrically parameterized response model; and
modifying the geometrically parameterized response model of the measurement target based on a difference between the map of the material property of the measurement target and the at least one specimen parameter value.

11. The method of claim 5 , further comprising:
determining a value of a parameter of interest directly from the map of the material property of the measurement target.

12. A metrology system comprising:
an x-ray illumination source configured to illuminate a measurement target with a beam of x-ray radiation;
an x-ray detector configured to detect one or more intensities each associated with one or more diffraction orders of an amount of radiation scattered from the measurement target in response to the incident beam of x-ray radiation; and
a computing system configured to
determine a map of a material property of the measurement target based on the detected intensities of the diffraction orders, wherein the material property is any of a complex refractive index, an electron density, and an absorptivity of the measurement target.

13. The metrology system of claim 12 , wherein the measurement target is a structure disposed on a planar substrate, wherein the structure is spatially periodic in at least one direction parallel to a planar surface of the planar substrate.

14. The metrology system of claim 12 , wherein the x-ray illumination source illuminates the measurement target with the beam of x-ray radiation at a plurality of angles of incidence with respect to the measurement target.

15. The metrology system of claim 12 , wherein the x-ray illumination source illuminates the measurement target with the beam of x-ray radiation at a plurality of different wavelengths.

16. The metrology system of claim 12 , wherein the computing system determines the map of the material property of the measurement target based on a fitting analysis of the detected intensities of the diffraction orders with a free-form model that estimates values of the intensities of the diffraction orders based on an assumed map of the material property of the measurement target.

17. The metrology system of claim 16 , wherein the fitting analysis is based at least in part on minimizing a difference between the detected intensities of the diffraction orders and the estimated intensities of the diffraction orders.

18. The metrology system of claim 16 , wherein the fitting analysis is based at least in part on minimizing a functional of the material property of the measurement target.

19. The metrology system of claim 18 , wherein the fitting analysis is based at least in part on minimizing a functional of the material property of the measurement target subject to an upper bound on a value of a difference between the detected intensities of the diffraction orders and the estimated intensities of the diffraction orders.

20. The metrology system of claim 16 , wherein the free-form model includes a plurality of volume elements representative of the measured target, and wherein the shape of at least one of the volume elements is changed during at least one iteration of the fitting analysis.

21. The metrology system of claim 16 , wherein the computing system is further configured to:
determine at least one specimen parameter value associated with the measurement target based on a fitting analysis of the detected intensities of the diffraction orders with a geometrically parameterized response model; and
modify the geometrically parameterized response model of the measurement target based on a difference between the map of the material property of the measurement target and the at least one specimen parameter value.

22. The metrology system of claim 16 , wherein the computing system is further configured to:
determine a value of a parameter of interest directly from the map of the material property of the measurement target.

23. A non-transitory, computer-readable medium, comprising:
code for causing a computer to determine a map of a material property of a measurement target based on detected intensities of diffraction orders, wherein the material property is any of a complex refractive index, an electron density, and an absorptivity of the measurement target, wherein the detected intensities are each associated with one or more diffraction orders of radiation scattered from the measurement target in response to an incident beam of x-ray radiation.

24. The non-transitory, computer-readable medium of claim 23 , further comprising:
code for causing the computer to determine the map of the material property of the measurement target based on a fitting analysis of the detected intensities of the diffraction orders with a free-form mode

Assignees

• Kla Tencor Corp

Inventors

• Sezginer Abdurrahman
• Hench John
• Bakeman Michael S

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01N23/201 Primary

  by measuring small-angle scattering · CPC title

• G01N2223/611

  patterned objects; electronic devices · CPC title

• G01N2223/645

  quality control · CPC title

• G01N23/207

  Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions · CPC title