Method for the crystallogenesis of a material electrically conducting in the molten state

Patent metadata

Field	Value
Publication number	US-9493889-B2
Application number	US-91993409-A
Country	US
Kind code	B2
Filing date	Feb 27, 2009
Priority date	Feb 27, 2008
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

The disclosure relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of the material in a crucible, that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; the method including that the electromagnetic kneading is obtained by applying an alternating magnetic field. The disclosure also relates to a device for implementing the method.

First claim

The invention claimed is:

1. A method for crystallogenesis of an electrically conducting material in the molten state by drawing from a molten mass of this material in a crucible, the method comprising:
gradually subjecting the molten material to a decreasing temperature, so that a liquid-solid interface is formed;
controlling flatness of the liquid-solid interface of the material by maintaining a piston, the temperature of which is controlled, at a determined distance from the interface;
electromagnetically kneading at least the molten material located between the piston and the interface, before and during solidification; and
applying an alternating magnetic field to obtain the electromagnetic kneading.

2. The method according to claim 1 , wherein the temperature of the piston is substantially equal to the sum of the melting temperature of the material and of the product of the thermal gradient in the material by the distance between the interface and the piston.

3. The method according to claim 1 , further comprising for electromagnetic kneading, generating an alternating magnetic field, whereof the intensity is comprised between 1 and 10 mT and the frequency is comprised between 1,000 and 10,000 Hz.

4. A device for crystallogenesis of an electrically conducting material in the molten state, by drawing from a molten mass of this material in a crucible, the device comprising:
a cooler operably cooling the molten material;
a member operably controlling the flatness of a liquid-solid interface of the material, comprising a piston, the temperature of which is controlled, having a planar lower face configured to be maintained at a predetermined distance from the liquid-solid interface of the material; and
an electromagnetic kneader of the molten material, the electromagnetic kneader operably generating an alternating magnetic field in at least the material located between the piston and the interface.

5. The device according to claim 4 , wherein the electromagnetic kneader further comprises an electromagnetic coil and an alternating electric current operably flowing in the coil.

6. The method of claim 1 , wherein the electrically conducting material is selected from:
binary alloys of germanium and silicon;
ternary alloys of the III-V family; and
ternary alloys of the II-IV family.

7. The method of claim 1 , wherein the temperature of the piston is set to different values in the radial direction.

8. The method of claim 1 , wherein the growth rate of the crystallized material is of 1 micrometer per second.

9. The device of claim 4 , wherein the crucible is translationally mobile with respect to the cooler.

10. The device of claim 9 , wherein the piston is fixed with respect to the cooler.

11. The device of claim 4 , wherein the piston comprises at least one thermocouple arranged therein.

12. The device of claim 11 , wherein the piston comprises at least one resistance heater and the at least one thermocouple is operably coupled to the resistance heater so as to regulate the temperature of the resistance heater.

13. A method for crystallogenesis of an electrically conducting material in the molten state by drawing from a molten mass of this material in a crucible, the method comprising:
positioning a seed at the bottom of a crucible;
transferring the molten mass to the crucible and forming a junction between the molten mass and the seed, the junction having a temperature of the melting point of the melted material;
transferring the crucible into an oven with a thermal gradient of about 40 K/cm;
positioning a piston at a distance of between about 5 mm and about 10 mm from the junction to keep the junction flat, wherein the piston has a temperature that does not fluctuate;
generating convection movements within the molten mass located between the piston and the junction, wherein said convection movements are generated by an alternating magnetic field with an intensity of between about 1 mT and about 10 mT and a frequency between about 1000 Hz and about 10,000 Hz, the alternating magnetic field being generated by the application of a current to a coil positioned about the crucible; and
moving the crucible relative to the piston to generate a crystalline alloy at a rate of about 3.6 mm/h, wherein the crystalline alloy is not cracked.

14. The method according to claim 13 , wherein the alternating magnetic field has an intensity of about 3 mT.

15. The method according to claim 13 , wherein the molten mass includes GaSb and InSb and the crystalline alloy is InGaSb comprising about 80% Ga and about 20% In.

16. A method for crystallogenesis of an electrically conducting material in the molten state by drawing from a molten mass of this material in a crucible, the method comprising:
positioning a seed at the bottom of a crucible;
transferring the molten mass to the crucible and forming a junction between the molten mass and the seed, the junction having a temperature of the melting point of the melted material;
transferring the crucible into an oven with a thermal gradient of about 40 K/cm;
generating convection movements within the molten mass;
positioning a piston at a distance of between about 5 mm and about 10 mm from the junction to keep the junction flat, wherein the piston has a temperature that does not fluctuate; and
moving the crucible relative to the piston to generate a crystalline alloy at a rate of about 3.6 mm/h, wherein the crystalline alloy is not cracked,
wherein the molten mass includes GaSb and InSb and the crystalline alloy is InGaSb comprising about 80% Ga and about 20% In.

Assignees

• Duffar Thierry
• Vian Gilbert
• Centre Nat De La Rech Scient (Cnrs)
• Inst Polytechnique Grenoble

Inventors

• Duffar Thierry
• Vian Gilbert

Classifications

• C30B11/003

  Heating or cooling of the melt or the crystallised material · CPC title

• Y10T117/1092

  Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger] · CPC title

• Y10T117/1024

  for crystallization from liquid or supercritical state · CPC title

• C30B11/007 Primary

  Mechanisms for moving either the charge or the heater · CPC title

• C30B29/40

  AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title