Limiting adjustment of polishing rates during substrate polishing

Patent metadata

Field	Value
Publication number	US-9490186-B2
Application number	US-201314092429-A
Country	US
Kind code	B2
Filing date	Nov 27, 2013
Priority date	Nov 27, 2013
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between the adjustment times and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.

First claim

What is claimed is:

1. A computer program product residing on a computer readable medium, the computer program product comprising instructions for causing a processor to:
receive from an in-situ monitoring system a sequence of characterizing values for a region of a substrate during polishing of the substrate, the characterizing values depending on a thickness of a layer undergoing polishing in the region of the substrate;
for each adjustment time of a plurality of adjustment times during polishing at which a polishing rate is adjusted prior to a polishing endpoint time at which polishing is halted, determine a polishing rate adjustment for the region of the substrate based on the sequence of characterizing values, wherein the plurality of adjustment times include a first adjustment time and an immediately subsequent second adjustment time separated by a first time period, wherein the first time period spans a plurality of scans of a sensor of the in-situ monitoring system of the substrate, wherein for each of at least some respective adjustment times of the plurality of adjustment times and including the first adjustment time determining the polishing rate adjustment comprises calculating a desired polishing rate to bring a projected characterizing value to a desired value at a projected time, wherein for each respective adjustment time the projected time is a point in time that occurs at a second time period after the respective adjustment time, wherein the polishing rate adjustment is calculated from the first polishing rate and the desired polishing rate, and wherein the second time period is greater than the first time period between the first adjustment time and the second adjustment time and the projected time is before the polishing endpoint time; and
adjust a polishing parameter to polish the substrate at a second polishing rate, the second polishing rate being the first polishing rate as adjusted by the polishing rate adjustment.

2. The computer program product of claim 1 , comprising instructions to calculate a desired polishing rate adjustment from the desired polishing rate and the first polishing rate, and compare the desired polishing rate adjustment to a threshold.

3. The computer program product of claim 2 , comprising instructions to set the polishing rate adjustment equal to the threshold if the desired polishing rate adjustment exceeds the threshold.

4. The computer program product of claim 2 , comprising instructions to set the polishing rate adjustment equal to the desired polishing rate adjustment if the desired polishing rate adjustment does not exceeds the threshold.

5. A polishing system, comprising:
a rotatable platen to support a polishing article;
a carrier head to hold a substrate in contact with a polishing surface of the polishing article, the carrier head having a plurality of controllable zones;
an in-situ monitoring system configured to generate a sequence of characterizing values for a region on the substrate corresponding to a controllable zone of the carrier head, the characterizing values depending on a thickness of a layer undergoing polishing in the region; and
a controller including
a processor device;
memory in communication with the processor device; and
a storage device that stores a program of computing instructions for execution by the processor using the memory, the program comprising instructions configured to cause the processor to:
receive the sequence of characterizing values from the in-situ monitoring system;
for each adjustment time of a plurality of adjustment times during polishing at which a polishing rate is adjusted prior to a polishing endpoint time at which polishing is halted, determine a polishing rate adjustment for the region of the substrate based on the sequence of characterizing values, wherein the plurality of adjustment times include a first adjustment time and an immediately subsequent second adjustment time separated by a first time period, wherein the first time period spans a plurality of scans of a sensor of the in-situ monitoring system of the substrate, wherein for each of at least some respective adjustment times of the plurality of adjustment times and including the first adjustment time determining the polishing rate adjustment comprises calculating a desired polishing rate to bring a projected characterizing value to a desired value at a projected time, wherein for each respective adjustment time the projected time is a point in time that occurs at a second time period after the respective adjustment time, wherein the polishing rate adjustment is calculated from the first polishing rate and the desired polishing rate, and wherein the second time period is greater than the first time period between the first adjustment time and the second adjustment time and the projected time is before the polishing endpoint time; and
adjust a pressure applied by a zone of the carrier head to polish the substrate at a second polishing rate, the second polishing rate being the first polishing rate as adjusted by the polishing rate adjustment.

6. The system of claim 5 , wherein the program comprises instructions for causing the processor to calculate a desired polishing rate adjustment from the desired polishing rate and the first polishing rate, and compare the desired polishing rate adjustment to a threshold.

7. The system of claim 6 , wherein the program comprises instructions for causing the processor to set the polishing rate adjustment equal to the threshold if the desired polishing rate adjustment exceeds the threshold.

8. The system of claim 6 , wherein the program comprises instructions for causing the processor to set the polishing rate adjustment equal to the desired polishing rate adjustment if the desired polishing rate adjustment does not exceeds the threshold.

9. The computer program product of claim 1 , wherein the desired value is a projected value for a reference region of the substrate.

10. The computer program product of claim 1 , comprising instructions for causing the plurality of adjustment times to occur at a fixed frequency.

11. The computer program product of claim 10 , wherein the fixed frequency is once per 5 to 50 rotations of a platen supporting a polishing pad that polishes the substrate.

12. The computer program product of claim 10 , wherein the fixed frequency is once per 3 to 30 seconds.

13. The computer program product of claim 1 , comprising instructions for causing the second time period to be at least twice the first time period.

14. The computer program product of claim 1 , comprising instructions to receive from an in-situ monitoring system a sequence of measured spectra reflected from the region of the substrate during polishing, and to calculate a characterizing value from each measured spectrum from the sequence of measured spectra to generate the sequence of characterizing values.

15. The system of claim 5 , wherein the program comprises instructions for causing the plurality of adjustment times to occur at a fixed frequency.

16. The system of claim 15 , wherein program comprises instructions for causing the fixed frequency to be once per 5 to 50 rotations of the platen.

17. The system of claim 15 , wherein the program comprises instructions for causing the fixed frequency to be once per 3 to 30 seconds.

18. The system of claim 5 , wherein the program comprises instructions for causing the second time period to be at least twice the first time period.

Assignees

• Applied Materials Inc

Inventors

• Benvegnu Dominic J
• Cherian Benjamin
• Dhandapani Sivakumar
• Lee Harry Q

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• B24B49/04

  involving measurement of the workpiece at the place of grinding during grinding operation · CPC title

• B24B37/005

  Control means for lapping machines or devices · CPC title

• H01L22/26 Primary

  Electricity · mapped topic