Rail-to-rail follower circuits

Patent metadata

Field	Value
Publication number	US-9467107-B2
Application number	US-201414203461-A
Country	US
Kind code	B2
Filing date	Mar 10, 2014
Priority date	Mar 10, 2014
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

In some embodiments, a source follower circuit may include a first level shifter configured to receive an input voltage; an N-type Metal-Oxide-Semiconductor (NMOS) transistor having a gate terminal coupled to an output of the first level shifter; a second level shifter configured to receive the input voltage; a P-type Metal-Oxide-Semiconductor (PMOS) transistor having a gate terminal coupled to an output of the second level shifter and a source terminal coupled to a source terminal of the NMOS transistor; and an amplifier configured to receive the input voltage and to output a current at a node between the source terminal of the NMOS transistor and the source terminal of the PMOS transistor, wherein the current is determined based upon a difference between the input voltage and a reference voltage.

First claim

The invention claimed is:

1. A source follower circuit, comprising:
a first level shifter configured to receive an input voltage;
an N-type Metal-Oxide-Semiconductor (NMOS) transistor having a gate terminal coupled to an output of the first level shifter;
a second level shifter configured to receive the input voltage;
a P-type Metal-Oxide-Semiconductor (PMOS) transistor having a gate terminal coupled to an output of the second level shifter and a source terminal coupled to a source terminal of the NMOS transistor; and
an amplifier configured to receive the input voltage and to produce an output current at a node between the source terminal of the NMOS transistor and the source terminal of the PMOS transistor, wherein the output current is determined without switching and based upon a difference between the input voltage and a single reference voltage.

2. The source follower circuit of claim 1 , wherein the amplifier is configured to increase the output current in response to the input voltage rising above the single reference voltage and approaching an upper voltage threshold.

3. The source follower circuit of claim 2 , wherein at a first time the output current increases up to a maximum value.

4. The source follower circuit of claim 3 , wherein the maximum value has a modulus approximately equal to four times a value of a quiescent current through the NMOS or PMOS transistors.

5. The source follower circuit of claim 3 , wherein the output current makes the NMOS transistor non-conductive as it approaches the maximum value.

6. The source follower circuit of claim 5 , wherein the amplifier is configured to decrease the output current in response to the input voltage falling below the single reference voltage and approaching a lower voltage threshold.

7. The source follower circuit of claim 6 , wherein at a second time the output current decreases to a minimum value.

8. The source follower circuit of claim 7 , wherein the minimum value has a modulus approximately equal to four times a value of a quiescent current through the NMOS or PMOS transistors.

9. The source follower circuit of claim 7 , wherein the output current makes the PMOS transistor non-conductive as it approaches the minimum value.

10. An electronic device, comprising:
a rail-to-rail source follower circuit including an amplifier configured to receive an input voltage and to output a current at a node between a source terminal of an N-type Metal-Oxide-Semiconductor (NMOS) transistor and a source terminal of a P-type Metal-Oxide-Semiconductor (PMOS) transistor without switching, wherein the input voltage is configured to drive a gate terminal of the NMOS transistor and a gate terminal of the PMOS transistor, wherein the output current is proportional to a difference between the input voltage and a single reference voltage, wherein the output current makes the NMOS transistor non-conductive as the input voltage approaches an upper threshold, and wherein the output current makes the PMOS transistor non-conductive as the input voltage approaches a lower threshold.

11. The electronic device of claim 10 , wherein the output current increases up to a maximum value as the input voltage approaches the upper threshold.

12. The electronic device of claim 11 , wherein the maximum value has a modulus approximately equal to four times a value of a quiescent current through the NMOS or PMOS transistors.

13. The electronic device of claim 11 , wherein the output current to decreases to a minimum value as the input voltage approaches the lower threshold.

14. The electronic device of claim 13 , wherein the minimum value has a modulus approximately equal to four times a value of a quiescent current through the NMOS or PMOS transistors.

15. A method, comprising:
receiving an input voltage at an amplifier of a source follower circuit having an N-type Metal-Oxide-Semiconductor (NMOS) transistor and a P-type Metal-Oxide-Semiconductor (PMOS) transistor, wherein the input voltage is configured to drive a gate terminal of the NMOS transistor and a gate terminal of the PMOS transistor, and wherein a source terminal of the NMOS transistor is coupled to a source terminal of the PMOS transistor;
determining, by the amplifier without switching, a difference between the input voltage and a single reference voltage; and
outputting, by the amplifier at a node between the source terminal of the NMOS transistor and the source terminal of the PMOS transistor, a current proportional to the difference.

16. The method of claim 15 , further comprising varying the input voltage over time between an upper threshold and a lower threshold, wherein the single reference voltage has a fixed value between the upper threshold and the lower threshold.

17. The method of claim 16 , further comprising increasing the output current up to a maximum value by the amplifier to make the NMOS transistor non-conductive in response to the input voltage reaching the upper voltage threshold.

18. The method of claim 17 , wherein the maximum value has a modulus approximately equal to four times a value of a quiescent current through the NMOS or PMOS transistors.

19. The method of claim 17 , further comprising decreasing the current down to a minimum value by the amplifier to make the PMOS transistor non-conductive in response to the input voltage approaching the lower voltage threshold.

20. The method of claim 19 , wherein the minimum value has a modulus approximately equal to four times a value of a quiescent current through the NMOS or PMOS transistors.

Assignees

• Freescale Semiconductor Inc

Inventors

• Coimbra Ricardo P
• Silva Jr Edevaldo Pereira
• Couto Andre L

Classifications

• H03F3/4521

  Complementary long tailed pairs having parallel inputs and being supplied in parallel · CPC title

• H03F2200/513

  the amplifier being made for low supply voltages · CPC title

• H03F3/505

  with field-effect devices · CPC title

• H03F2203/30123

  the push side of the SEPP amplifier has an extra drive follower stage to control this push side · CPC title

• H03F2200/69

  the amplifier stage being a common drain coupled MOSFET, i.e. source follower · CPC title