Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device
US-9213237-B2 · Dec 15, 2015 · US
Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US9465298B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9465298-B2 |
| Application number | US-201514973097-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2015 |
| Priority date | Dec 25, 2006 |
| Publication date | Oct 11, 2016 |
| Grant date | Oct 11, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
First claim
Opening claim text (preview).
What is claimed is: 1. A pattern forming method, comprising: coating a substrate with a resist composition capable of forming a resist film of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays and or radiation, so as to form a resist film; and developing the resist film exposed with the negative developer containing an organic solvent, wherein the organic solvent in the negative developer contains a ketone-based solvent, the pattern forming method only includes negative development for developing the resist film exposed, and the resist composition contains a resin having an aromatic group. 2. The pattern forming method according to claim 1 , further comprising: exposing the resist film with an EUV light. 3. The pattern forming method according to claim 1 , further comprising: washing the resist film with a rinsing solution containing at least one selected from the group consisting of a hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based solvent. 4. The pattern forming method according to claim 3 , wherein the rinsing solution contains at least one selected from the group consisting of an aliphatic hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based solvent. 5. The pattern forming method according to claim 1 , wherein the organic solvent in the negative developer further contains one selected from the group consisting of a hydrocarbon-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based solvent. 6. The pattern forming method according to claim 1 , wherein the organic solvent in the negative developer further contains an ester-based solvent. 7. The pattern forming method according to claim 1 , wherein the ketone-based solvent contained in the negative developer is a cyclic ketone-based solvent. 8. A method of forming an electronic device, comprising the pattern forming method according to claim 1 .
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Classifications
Treatment after imagewise removal, e.g. baking · CPC title
- G03F7/325Primary
Non-aqueous compositions · CPC title
of the already developed image · CPC title
Liquid compositions therefor, e.g. developers · CPC title
the macromolecular compound having an alicyclic moiety in a side chain · CPC title
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- What does patent US9465298B2 cover?
- A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist compositio…
- Who is the assignee on this patent?
- Fujifilm Corp
- What technology area does this patent fall under?
- Primary CPC classification G03F7/325. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Oct 11 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).