Method of manufacturing chemical mechanical polishing layers

Patent metadata

Field	Value
Publication number	US-9463553-B2
Application number	US-201414184328-A
Country	US
Kind code	B2
Filing date	Feb 19, 2014
Priority date	Feb 19, 2014
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

A method of making a polishing layer for polishing a substrate is provided, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ≦24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted for polishing the substrate.

First claim

We claim:

1. A method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising:
providing a liquid prepolymer material, wherein the liquid prepolymer material reacts to form a material comprising a poly(urethane);
providing a plurality of thermally expandable hollow microspheres; wherein each thermally expandable hollow microsphere in the plurality of thermally expandable hollow microspheres has a poly(vinylidene dichloride)/polyacrylonitrile copolymer shell; and, wherein the poly(vinylidene dichloride)/polyacrylonitrile copolymer shell encapsulates an isobutane;
exposing the plurality of thermal expandable hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres;
treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere for a treatment period of 20 minutes to <5 hours to form a plurality of treated hollow microspheres;
combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture;
allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ≦24 hours after formation of the plurality of treated hollow microspheres; and,
deriving at least one polishing layer from the cured material;
wherein the at least one polishing layer has a polishing surface adapted for polishing the substrate.

2. The method of claim 1 , wherein the plurality of thermally expandable hollow microspheres is exposed to a vacuum of ≧50 mm Hg for an exposure period of 20 to 40 minutes to form the plurality of exposed hollow microspheres; and,
wherein the plurality of exposed hollow microspheres is treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas for a treatment period of 25 minutes to 1 hour to form the plurality of treated hollow microspheres, wherein the gas is >30 vol % CO 2 .

3. The method of claim 1 , further comprising:
providing a mold; and,
transferring the curable mixture into the mold;
wherein the curable mixture undergoes the reaction to form the cured material in the mold.

4. The method of claim 3 , further comprising:
skiving the cured material to form the at least one polishing layer.

5. The method of claim 4 , wherein the at least one polishing layer is a plurality of polishing layers.

6. The method of claim 5 ,
wherein the liquid prepolymer material reacts to form a poly(urethane); and,
wherein the plurality of thermally expandable hollow microspheres is exposed to a vacuum of ≧50 mm Hg for an exposure period of 20 to 40 minutes to form the plurality of exposed hollow microspheres; and,
wherein the plurality of exposed hollow microspheres is treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas for a treatment period of 25 minutes to 1 hour to form the plurality of treated hollow microspheres, wherein the gas is >30 vol % CO 2 .

7. The method of claim 6 , wherein the reaction is allowed to begin ≦1 hour after the formation of the plurality of treated hollow microspheres.

8. The method of claim 1 , further comprising:
skiving the cured material to form the at least one polishing layer.

9. The method of claim 1 , wherein the at least one polishing layer is a plurality of polishing layers.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Kolesar David
• Sarafinas Aaron
• Saikin Alan
• Post Robert L

Classifications

• H10W72/01951

  Changing the shapes of bond pads · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24D11/008

  Finishing manufactured abrasive sheets, e.g. cutting, deforming · CPC title

• B24D11/003 Primary

  without embedded abrasive particles (B24D11/005 takes precedence) · CPC title