Nanowire grid structure having grid patterns and a sacrificial layer

Patent metadata

Field	Value
Publication number	US-9456501-B2
Application number	US-201214365506-A
Country	US
Kind code	B2
Filing date	Dec 6, 2012
Priority date	Dec 13, 2011
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

Provided is a method of manufacturing a nanowire, including: forming a plurality of grid patterns on a grid base layer; forming a sacrificial layer on the grid base layer on which the grid patterns are formed; producing a nanowire grid structure by forming a nanowire base layer on the sacrificial layer; forming a nanowire by wet etching the nanowire base layer; and separating the grid patterns from the nanowire by etching the sacrificial layer.

First claim

The invention claimed is:

1. A nanowire grid structure, comprising:
a grid base layer on which a plurality of grid patterns is formed;
a sacrificial layer formed on the grid base layer on which the grid patterns are formed; and
a nanowire base layer formed on the sacrificial layer so that a void is formed between the respective grid patterns;
wherein a ratio between a width of the grid patterns and a thickness of the sacrificial layer formed on a side of the grid patterns is 1:0.1 to 1:0.5.

2. The structure of claim 1 , wherein a ratio between the width of the grid patterns and a thickness of the nanowire base layer formed on the side of the grid patterns is 1:0.1to 1:0.5.

3. The structure of claim 1 , wherein a ratio between the thickness of the sacrificial layer formed on the side of the grid patterns and the thickness of the nanowire base layer is 1:0.1to 1.0.5.

4. The structure of claim 1 , wherein the width of the grid patterns is formed in a range of 20 nm to 200 nm.

5. The structure of claim 4 , wherein an etchant of the sacrificial layer and an etchant of the nanowire base layer are formed of different materials from each other.

6. The structure of claim 5 , wherein the nanowire base layer comprises at least one material of a metal, a metallic oxide material, a nitride, and a ceramic material.

7. The structure of claim 5 , wherein the sacrificial layer comprises at least any one of oxide, poly-Si, Cu, Al, Ni, Ti and Cr.

8. The structure of claim 4 , wherein the grid patterns are formed of a photo curable polymer or a thermosetting polymer.

9. A nanowire grid structure, comprising:
a substrate;
a grid base layer disposed on the substrate and having a plurality of grid patterns;
a sacrificial layer disposed on the grid base layer; and
a nanowire base layer disposed on the sacrificial layer,
wherein the sacrificial layer and the nanowire base layer contain materials having different etchants; and
wherein the nanowire base layer has a void, and a nanowire is formed by wet etching through the void.

10. The nanowire grid structure of claim 9 , wherein the nanowire is separated from the grid base layer by etching of the sacrificial layer.

11. The nanowire grid structure of claim 9 , wherein grid patterns are formed by pressurizing the grid base layer disposed on the substrate using an imprint mold and hardening the grid base layer.

12. The nanowire grid structure of claim 11 , wherein the imprint mold contains a soft material to enable a roll-to-roll process to be performed.

13. The nanowire grid structure of claim 11 , wherein the grid base layer contains a photo curable polymer, and the imprint mold contains a material which light is able to pass through.

14. The nanowire grid structure of claim 9 , wherein the sacrificial layer is provided by depositing a sacrificial layer material on the grid pattern layer using at least one method of a sputtering method, a chemical vapor deposition method, and an evaporation method.

15. The nanowire grid structure of claim 9 , wherein the nanowire base layer is provided by depositing a nanowire material on the sacrificial layer using at least one method of a sputtering method, a chemical vapor deposition method, and an evaporation method.

16. The nanowire grid structure of claim 9 , wherein the grid base layer contains a photo curable polymer, and the substrate contains a material which light is able to pass through.

Assignees

• Lg Innotek Co Ltd

Inventors

• Lee Young Jae
• Yoo Kyoung Jong
• Kim Jin Su
• Lee Jun

Classifications

• H10D62/119

  Nanowire, nanosheet or nanotube semiconductor bodies · CPC title

• H05K2201/09227

  Layout details of a plurality of traces, e.g. escape layout for Ball Grid Array [BGA] mounting · CPC title

• B81C99/008 Primary

  separating the processed structure from a mother substrate · CPC title

• H05K1/09

  Use of materials for the {conductive, e.g. } metallic pattern · CPC title

• H05K3/146

  By vapour deposition · CPC title